Method for fabricating semiconductor device

Claim 1

A method for fabricating a semiconductor device, comprising the steps of: (1) forming a silicon layer on a substrate, (2) forming a crystalline metal silicide layer on the silicon layer; (3) forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, wherein the crystalline metal silicide layer is converted to be amorphous by injecting ions of phosphorus(P), boron(B), or arsenic(As), wherein a dose of the ions of phosphorus(P), born(B), or arsenic(As) is in a range of about 1E15˜8E15 cm -3 ; (4) crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide; and (5) forming a diffusion preventing film on the silicon layer, wherein the diffusion preventing film is formed by first and second deposition steps of about 50 Å in each deposition step to form first and second diffusion preventing films, respectively so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased.

Claim 2

A method for fabricating a semiconductor device, comprising the steps of: (1) forming a silicon layer on a substrate, (2) forming a crystalline metal silicide layer on the silicon layer; (3) forming an amorphous metal silicide layer by injecting ions into the crystalline metal silicide layer, wherein the crystalline metal silicide layer is converted to be amorphous by injecting ions of phosphorus(P), boron(B), or arsenic(As), wherein a dose of the ions of phosphorus(P), born(B), or arsenic(As) is in a range of about 1E15˜8E15 cm -3 ; (4) crystallizing the amorphous metal silicide by heat treating the amorphous metal silicide; and (5) forming a diffusion preventing film on the silicon layer, wherein the diffusion preventing film is formed by first and second deposition steps of about 50 Å in each deposition step to form first and second diffusion preventing films, respectively so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased.

Claim 8

A method for fabricating a semiconductor device, comprising the steps of: (1) depositing an insulating film on a substrate; (2) forming a first conductive type polysilicon layer on a first region of the insulating film; (3) forming a second conductive type polysilicon layer on a second region of the insulating film; (4) forming a diffusion preventing film on the first and second conductive polysilicon layers, wherein the diffusion preventing film is formed with first and second deposition steps of about 50 Å in each deposition step to form first and second diffusion preventing films, respectively, so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased; (5) forming an amorphous metal silicide layer, wherein the step (5) for forming an amorphous metal silicide layer consists of the step of sputtering an amorphous metal silicide layer on the diffusion preventing film; (6) crystallizing the amorphous metal silicide layer by heat treating the amorphous metal silicide layer; and (7) etching the crystallized metal silicide layer, the first and second polysilicon layers, and the insulating film to form a CMOS transistor.

Claim 9

A method for fabricating a semiconductor device, comprising the steps of: (1) depositing an insulating film on a substrate; (2) forming a first conductive type polysilicon layer on a first region of the insulating film; (3) forming a second conductive type polysilicon layer on a second region of the insulating film; (4) forming a diffusion preventing film on the first and second conductive polysilicon layers, wherein the diffusion preventing film is formed with first and second deposition steps of about 50 Å in each deposition step to form first and second diffusion preventing films, respectively, so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased; (5) forming an amorphous metal silicide layer, wherein the step (5) for forming an amorphous metal silicide layer consists of the step of sputtering an amorphous metal silicide layer on the diffusion preventing film; (6) crystallizing the amorphous metal silicide layer by heat treating the amorphous metal silicide layer; and (7) etching the crystallized metal silicide layer, the first and second polysilicon layers, and the insulating film to form a CMOS transistor.

Claim 13

A method of making a semiconductor device comprising: forming a semiconductor layer; forming an amorphous compound layer having metal and semiconductor atoms, wherein the step of forming the amorphous compound layer comprises sputtering on the semiconductor layer the amorphous compound layer; converting the amorphous compound layer to a crystalline compound layer having metal and semiconductor atoms; and forming a diffusion preventing film on the semiconductor layer, wherein the diffusion preventing film is formed by first and second deposition steps of about 50 Åin each deposition step to form first and second diffusion preventing films, respectively, so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased.

Claim 14

A method of making a semiconductor device comprising: forming a semiconductor layer; forming an amorphous compound layer having metal and semiconductor atoms, wherein the step of forming the amorphous compound layer comprises sputtering on the semiconductor layer the amorphous compound layer; converting the amorphous compound layer to a crystalline compound layer having metal and semiconductor atoms; and forming a diffusion preventing film on the semiconductor layer, wherein the diffusion preventing film is formed by first and second deposition steps of about 50 Åin each deposition step to form first and second diffusion preventing films, respectively, so that grain boundaries of the first and second diffusion preventing films do not match whereby a diffusion preventing property is increased.