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US6093636A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets

Assignee: International Business Machines Corp
•
Filing: 1998-07-08
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Granted: 2000-07-25
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Expires: 2018-07-08
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Abstract

Abstract The invention relates to a process for forming an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises porous organic polyarylene ether.

Inventors

  • 👤 Kenneth Raymond Carter
  • 👤 Daniel Joseph Dawson
  • 👤 Craig Jon Hawker
  • 👤 James Lupton Hedrick
  • 👤 Jeffrey Curtis Hedrick
  • 👤 Victor YeeWay Lee
  • 👤 Robert Dennis Miller
  • 👤 Willi Volksen
  • 👤 Do Yeung Yoon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 09:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; H10P14/66; H10P14/665; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/072; H10W20/40; H10W20/45; H10W20/46; H10W20/48; H10W20/495; H10P14/63; H10P14/6326; H10P14/6342

Claims Analysis

Total Claims: 22
Claim 1
Independent Claim 66 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising decomposable polymer and thermosetting resin; (b) heating the composition to condense the thermosetting resin; (c) decomposing the decomposable polymer (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 2
Dependent Claim 66 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising decomposable polymer and thermosetting resin; (b) heating the composition to condense the thermosetting resin; (c) decomposing the decomposable polymer (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 3
Dependent Claim 17 words
The process of claim 1 wherein the decomposable polymer is decomposed by heating or exposure to radiation.
Claim 4
Dependent Claim 13 words
The process of claim 2 wherein the organic thermosetting resin comprises a polyarylene.
Claim 5
Dependent Claim 30 words
The process of claim 2 wherein the thermosetting resin is selected from the group consisting of a polyimide, a polyarylene, a polyarylene ether, a polybenzazole, a polyisocyanurate, and mixtures thereof.
Claim 6
Dependent Claim 21 words
The process of claim 2 wherein the decomposable polymer is a linear polymer selected from polyester, polystyrene, poly(a-methylstyrene), polyacrylate or polymethacrylate.
Claim 7
Dependent Claim 14 words
The process of claim 2 wherein the decomposable polymer is a cross-linked polymeric nanosphere.
Claim 8
Dependent Claim 12 words
The process of claim 2 wherein the decomposable polymer is hyperbranched polymer.
Claim 9
Dependent Claim 12 words
The process of claim 7 wherein the hyperbranched polymer is a polyester.
Claim 10
Dependent Claim 14 words
The process of claim 1 wherein the decomposable polymer is a star branched polymer.
Claim 11
Dependent Claim 45 words
The process of claim 1 wherein the decomposable polymer is selected from the group consisting of a block copolymer, a star block copolymer, a radial diblock polymer, a graft diblock copolymer, a comb grafted copolymer, a dendigraft copolymer, a tapered block copolymer, and mixtures thereof.
Claim 12
Dependent Claim 62 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising decomposable polymer and organic thermosetting resin; (d) heating the composition to condense the organic thermosetting resin comprising a polyarylene ether; and (e) decomposing the decomposable polymer.
Claim 13
Dependent Claim 62 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising decomposable polymer and organic thermosetting resin; (d) heating the composition to condense the organic thermosetting resin comprising a polyarylene ether; and (e) decomposing the decomposable polymer.
Claim 14
Dependent Claim 17 words
The process of claim 11 wherein the decomposable polymer is decomposed by heating or exposure to radiation.
Claim 15
Dependent Claim 13 words
The process of claim 11 wherein the organic thermosetting resin comprises a polyarylene.
Claim 16
Dependent Claim 29 words
The process of claim 11 wherein the thermosetting resin is selected from the group consisting of a polyimide, a polyarylene, a polyarylene ether, polybenzazoles, a polyisocyanurate, and mixtures thereof.
Claim 17
Dependent Claim 21 words
A process of claim 12 wherein the decomposable polymer is a linear polymer selected from polyester, polystyrene, poly(a-methylstyrene), polyacrylate or polymethacrylate.
Claim 18
Dependent Claim 14 words
The process of claim 12 wherein the decomposable polymer is a cross-linked polymeric nanosphere.
Claim 19
Dependent Claim 12 words
The process of claim 11 wherein the decomposable polymer is hyperbranched polymer.
Claim 20
Dependent Claim 12 words
The process of claim 17 wherein the hyperbranched polymer is a polyester.
Claim 21
Dependent Claim 14 words
The process of claim 1 wherein the decomposable polymer is a star branched polymer.
Claim 22
Dependent Claim 45 words
The process of claim 11 wherein the decomposable polymer is selected from the group consisting of a block copolymer, a star block copolymer, a radial diblock copolymer, a graft diblock copolymer, a comb grafted copolymer, a dendigraft copolymer, a tapered block copolymer, and mixtures thereof.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-07-25 2004-01-24 2004-07-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-07-25 2008-01-24 2008-07-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-07-25 2012-01-24 2012-07-25 $7700.00 Window Closed / Lapsed

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