US5773197A
Expired / Lapsed
US
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Integrated circuit device and process for its manufacture
Assignee: International Business Machines Corp
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Filing: 1996-10-28
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Granted: 1998-06-30
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Expires: 2016-10-28
Abstract
Abstract The invention relates to an integrated circuit device comprising (i) a substrate; (ii) metallic circuit lines positioned on the substrate and (iii) a dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and uncondensed precursor polymer preferably terminated with an alkoxysilyl alkyl group.
Inventors
- 👤 Kenneth Raymond Carter
- 👤 James Lupton Hedrick
- 👤 Robert Dennis Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/062; H10W20/071; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
100 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is; terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (b) heating the composition to react the reactants; (c) lithographically patterning the dielectric layer; (d) depositing a metallic film onto the patterned dielectric layer; and (e) planarizing the film to form the integrated circuit.
Claim 2
Dependent Claim
100 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is; terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (b) heating the composition to react the reactants; (c) lithographically patterning the dielectric layer; (d) depositing a metallic film onto the patterned dielectric layer; and (e) planarizing the film to form the integrated circuit.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane or mixtures thereof.
Claim 4
Dependent Claim
28 words
The process of claim 1 wherein the precursor polymer is terminated with tri C 1-10 alkoxysilyl C 1-10 alkyl group or a tri C 1-10 alkoxysilyl aryl group.
Claim 5
Dependent Claim
89 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is; terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (d) heating the composition to react the reactants.
Claim 6
Dependent Claim
89 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film, a layer of a dielectric composition comprising reactants organic polysilica and a precursor polymer selected from uncondensed polybenzothiazole and polybenzimidazole which is; terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (d) heating the composition to react the reactants.
Claim 7
Dependent Claim
17 words
The process of claim 4 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane or mixtures thereof.
Claim 8
Dependent Claim
29 words
The process of claim 4 wherein the precursor polymer is end capped with a tri C 1-10 alkoxysilyl C 1-10 alkyl group or a tri C 10 alkoxysilylaryl group.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-06-29 | 2001-12-29 | 2002-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-29 | 2005-12-29 | 2006-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-29 | 2009-12-29 | 2010-06-30 | $7700.00 | Window Closed / Lapsed |