US4965134A
Expired / Lapsed
US
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Method for manufacturing highly heat-resistant dielectrics
Assignee: Siemens AG
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Filing: 1988-05-09
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Granted: 1990-10-23
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Expires: 2008-05-09
Abstract
Abstract A method for manufacturing highly heat resistant dielectrics is provided wherein an oligomeric and/or polymeric hydroxypolyamide is dissolved in an organic solvent and then applied to a substrate. The solvent is removed and the hydroxypolyamide is converted into a polybenzoxazole by annealing at a temperature of between 200° to 500° C. The resulting dielectrics are stable up to 550° C. and have a continuous temperature resistance of more than 3 hours at 470° C. The dielectrics are particularly well suited for applications in microelectronics.
Inventors
- 👤 Hellmut Ahne
- 👤 Albert Hammerschmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 17:51
CPC Classifications
C; C08; C08G; C08G73/00; C08G73/06; C08G73/22; H; H01; H01B; H01B3/00; H01B3/18; H01B3/30; H01B3/303; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/31725
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
A method for manufacturing highly heat-resistant dielectrics, based upon organic polymers, on a substrate, comprising the steps of applying a polybenzoxazole precursor which is dissolved in an organic solvent, to the substrate; removing the solvent; and annealing the polybenzoxazole precursor at a temperature between 200° and 500° C., whereby the polybenzoxazole precursor is converted into a polybenzoxazole, wherein the polybenzoxazole precursor has the following structure: ##STR4## where R, R*, R 1 , R 1 * and R 2 are aromatic residues and where: n 3 =1 to 100, n 1 =n 2 =0, or n 1 and n 3 =1 to 100, n 2 =0
Claim 2
Independent Claim
105 words
A method for manufacturing highly heat-resistant dielectrics, based upon organic polymers, on a substrate, comprising the steps of applying a polybenzoxazole precursor which is dissolved in an organic solvent, to the substrate; removing the solvent; and annealing the polybenzoxazole precursor at a temperature between 200° and 500° C., whereby the polybenzoxazole precursor is converted into a polybenzoxazole, wherein the polybenzoxazole precursor has the following structure: ##STR4## where R, R*, R 1 , R 1 * and R 2 are aromatic residues and where: n 3 =1 to 100, n 1 =n 2 =0, or n 1 and n 3 =1 to 100, n 2 =0
Claim 3
Dependent Claim
22 words
A method according to claim 1, wherein a polycondensation product of an aromatic amino-hydroxy carboxylic acid is used as the polybenzoxazole precursor.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein a polycondensation product of 3-amino-4-hydroxybenzoic acid is used as the polybenzoxazole precursor.
Claim 5
Dependent Claim
36 words
A method according to claim 1, wherein a polycondensation product of an aromatic diaminodihydroxy compound, an aromatic dicarboxylic acid or a dicarboxylic acid chloride, and an aromatic aminohydroxy carboxylic acid is used as the polybenzoxazole precursor.
Claim 6
Dependent Claim
19 words
A method according to claim 2, wherein the annealing takes place at a temperature between 300° and 400° C.
Claim 7
Dependent Claim
19 words
A method according to claim 1, wherein the annealing takes place within a time of 0.5 to 8 hours.
Claim 8
Dependent Claim
18 words
A method according to claim 1, wherein the solvent is at least one of N-methylpyrrolidone and N.N-dimethyl acetamide.
Claim 9
Dependent Claim
30 words
A method according to claim 1, further comprising the step of adding at least one of an adhesion agent and a wetting agent to the solution of the polybenzoxazole precursor.
Claim 10
Dependent Claim
24 words
A method according to claim 1, wherein the solution of the polybenzoxazole precursor is applied to the substrate by means of a centrifuging technique.
Claim 11
Dependent Claim
20 words
A method according to claim 1, wherein the solvent is removed at a temperature of between 50° and 120° C.
Claim 12
Dependent Claim
19 words
A method according to claim 1, wherein the annealing takes place at a temperature between 300° and 400° C.
Claim 13
Dependent Claim
23 words
A method according to claim 11 characterized by the feature that the annealing take place within a time of 0.5 to 8 hours.
Claim 14
Dependent Claim
23 words
A method according to claim 12 characterized by the feature that the annealing takes place within a time of 1 to 4 hours.
Claim 15
Dependent Claim
18 words
A method according to claim 11 wherein the solvent is at least one of N-methylpyrrolidone and N.N-dimethyl acetamide.
Claim 16
Dependent Claim
26 words
A method according to claim 11 further comprising the step of adding at least one of an adhesion agent and a wetting agent, to the solvent.
Claim 17
Dependent Claim
28 words
A method according to claim 15 characterized by the feature that the solution of the polybenzoxazole precursor is applied to the substrate by means of a centrifuging technique.
Claim 18
Dependent Claim
24 words
A method according to claim 11 characterized by the feature that the solvent is removed at a temperature of between 50° and 120° C.
Claim 19
Dependent Claim
26 words
A permanent coating for the surface of a substrate comprising a highly heat resistant dielectric on said substrate produced according to the method of claim 1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-22 | 2002-04-23 | 2002-10-23 | $7700.00 | Window Closed / Lapsed |