Patent US6080645A successfully refreshed from Google Patents.
US6080645A
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Method of making a doped silicon diffusion barrier region
Assignee: Round Rock Research LLC
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Filing: 1996-10-29
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Granted: 2000-06-27
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Expires: 2016-10-29
Abstract
Abstract Methods and apparatus are discussed for forming word line stacks formed of a silicon diffusion barrier region, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.
Inventors
- 👤 Pai-Hung Pan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:16
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
75 words
A method of manufacturing a semiconductor device on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer; forming a doped silicon diffusion barrier region in the silicon layer having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen, and (2) nitrogen; and forming a conductor layer directly on the diffusion barrier region.
Claim 2
Independent Claim
75 words
A method of manufacturing a semiconductor device on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer; forming a doped silicon diffusion barrier region in the silicon layer having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen, and (2) nitrogen; and forming a conductor layer directly on the diffusion barrier region.
Claim 3
Dependent Claim
30 words
The method of claim 1, wherein the semiconductor device is a sub-0.25 micron word line stack, utilized in a dynamic random access memory (DRAM) and the semiconductor layer comprises silicon.
Claim 4
Dependent Claim
27 words
The method of claim 1, wherein the silicon layer is selected from the group consisting of: intrinsic polysilicon, intrinsic amorphous silicon, doped amorphous silicon, and doped polysilicon.
Claim 5
Dependent Claim
46 words
The method of claim 3, wherein the silicon layer is selected from the group consisting of: intrinsic polysilicon and intrinsic amorphous silicon, and further comprising implanting an ion into the silicon layer, wherein the ion is selected from the group consisting of: arsenic, phosphorous, and boron.
Claim 6
Dependent Claim
48 words
The method of claim 4, wherein the implanting is performed at a time selected from the following times: after forming the silicon layer, prior to forming the diffusion barrier region; after forming the diffusion barrier region, prior to forming the conductor layer; and after forming the conductor layer.
Claim 7
Dependent Claim
18 words
The method of claim 1, wherein the silicon layer has a thickness of approximately 50 to 300 nanometers.
Claim 8
Independent Claim
126 words
A method of manufacturing a semiconductor device on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer; forming a doped silicon diffusion barrier region in the silicon layer having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen,and (2) nitrogen; and wherein the diffusion barrier region comprises a material selected from the following: oxygen-doped polysilicon, nitrogen-doped polysilicon, oxygen-doped amorphous silicon, and nitrogen-doped amorphous silicon, formed by a process selected from the following: low pressure chemical vapor deposition (LPCVD), ambient pressure chemical vapor deposition (APCVD), plasma enhanced chemical vapor deposition (PECVD), and sputtering; and forming a conductor layer directly on the diffusion barrier region.
Claim 9
Independent Claim
126 words
A method of manufacturing a semiconductor device on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer; forming a doped silicon diffusion barrier region in the silicon layer having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen,and (2) nitrogen; and wherein the diffusion barrier region comprises a material selected from the following: oxygen-doped polysilicon, nitrogen-doped polysilicon, oxygen-doped amorphous silicon, and nitrogen-doped amorphous silicon, formed by a process selected from the following: low pressure chemical vapor deposition (LPCVD), ambient pressure chemical vapor deposition (APCVD), plasma enhanced chemical vapor deposition (PECVD), and sputtering; and forming a conductor layer directly on the diffusion barrier region.
Claim 10
Dependent Claim
29 words
The method of claim 1, wherein the forming the diffusion barrier region comprises implanting a dopant, selected from the group consisting of: oxygen and nitrogen, into the silicon layer.
Claim 11
Dependent Claim
41 words
The method of claim 1, wherein the diffusion barrier region has a thickness of approximately 5 to 100 nanometers and the dopant introduced into the diffusion barrier region has a concentration of approximately 1×10 17 to 5×10 21 atoms/cm 3 .
Claim 12
Dependent Claim
22 words
The method of claim 1, wherein the conductor layer comprises titanium silicide and has a thickness of approximately 50 to 200 nanometers.
Claim 13
Dependent Claim
22 words
The method of claim 1, wherein the conductor layer comprises titanium silicide and has a thickness of approximately 50 to 200 nanometers.
Claim 14
Independent Claim
117 words
A method of manufacturing a sub-0.25 micron word line stack on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer, wherein the silicon layer is selected from the group consisting of: intrinsic polysilicon and intrinsic amorphous silicon; implanting an ion into the silicon layer, wherein the ion is selected from the group consisting of: arsenic, phosphorous, and boron; forming a doped silicon diffusion barrier region in the silicon layer and having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen, and (2) nitrogen; and forming a conductor layer directly on the diffusion barrier region.
Claim 15
Independent Claim
117 words
A method of manufacturing a sub-0.25 micron word line stack on a semiconductor layer, comprising: forming an oxide layer on the semiconductor layer; forming a silicon layer on the oxide layer, wherein the silicon layer is selected from the group consisting of: intrinsic polysilicon and intrinsic amorphous silicon; implanting an ion into the silicon layer, wherein the ion is selected from the group consisting of: arsenic, phosphorous, and boron; forming a doped silicon diffusion barrier region in the silicon layer and having low electrical resistance by introducing into the silicon layer at least one dopant selected from the group consisting of: (1) oxygen, and (2) nitrogen; and forming a conductor layer directly on the diffusion barrier region.
Claim 16
Dependent Claim
18 words
The method of claim 12, wherein the silicon layer has a thickness of approximately 50 to 300 nanometers.
Claim 17
Dependent Claim
57 words
The method of claim 12, wherein the diffusion barrier region consists of a material selected from the following: oxygen-doped polysilicon, nitrogen-doped polysilicon, oxygen-doped amorphous silicon, and nitrogen-doped amorphous silicon, formed by a process selected from the following: low pressure chemical vapor deposition (LPCVD), ambient pressure chemical vapor deposition (APCVD), plasma enhanced chemical vapor deposition (PECVD), and sputtering.
Claim 18
Dependent Claim
29 words
The method of claim 12, wherein the forming the diffusion barrier region comprises implanting a dopant, selected from the group consisting of: oxygen and nitrogen, into the silicon layer.
Claim 19
Dependent Claim
41 words
The method of claim 12, wherein the diffusion barrier region has a thickness of approximately 5 to 100 nanometers and the dopant introduced into the diffusion barrier region has a concentration of approximately 1×10 17 to 5×10 21 atoms/cm 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |