US5545581A — Plug strap process utilizing selective nitride an…

Claim 1

Independent Claim 122 words

A method of electrically connecting a first electronic element and a second electronic element separated by a dielectric, comprising: applying a nitride layer over both of said elements and said dielectric; applying a first insulation layer over said nitride layer; etching an aperture over said first and second elements by application of a highly selective etch that preferentially etches said insulation layer relative to the nitride layer and application of a selective nitride etch that preferably etches said nitride layer relative to said dielectric layer, thereby forming a first hole through said first insulation layer and said nitride layer; and depositing an electrical conductor in said first hole, thereby forming a strap wherein said first and second electrical elements are electrically connected.

Claim 2

Independent Claim 122 words

A method of electrically connecting a first electronic element and a second electronic element separated by a dielectric, comprising: applying a nitride layer over both of said elements and said dielectric; applying a first insulation layer over said nitride layer; etching an aperture over said first and second elements by application of a highly selective etch that preferentially etches said insulation layer relative to the nitride layer and application of a selective nitride etch that preferably etches said nitride layer relative to said dielectric layer, thereby forming a first hole through said first insulation layer and said nitride layer; and depositing an electrical conductor in said first hole, thereby forming a strap wherein said first and second electrical elements are electrically connected.

Claim 3

Dependent Claim 13 words

A method of claim 1 wherein said insulation layer comprises a silicon oxide.

Claim 4

Dependent Claim 24 words

The method of claim 1 further comprising: planarizing the strap; and depositing a second insulation layer over said first insulation layer and said strap.

Claim 5

Independent Claim 134 words

A method of electrically connecting a first electronic element and a second electronic element, separated by a dielectric, comprising: applying a nitride layer over both of said elements and said dielectric; applying a first insulation layer over said layer; etching an aperture over said first and second elements by application of a highly selective etch that preferentially etches said first insulation layer relative to said nitride layer, application of a selective nitride etch that preferentially etches said nitride layer relative to said dielectric, and a highly selective etch that preferentially etches said dielectric relative to silicon, thereby forming a first hole through said first insulation layer, said nitride layer and said dielectric; depositing an electrical conductor in said first hole, thereby forming a strap wherein said first and second electrical elements are electrically connected.

Claim 6

Independent Claim 134 words

A method of electrically connecting a first electronic element and a second electronic element, separated by a dielectric, comprising: applying a nitride layer over both of said elements and said dielectric; applying a first insulation layer over said layer; etching an aperture over said first and second elements by application of a highly selective etch that preferentially etches said first insulation layer relative to said nitride layer, application of a selective nitride etch that preferentially etches said nitride layer relative to said dielectric, and a highly selective etch that preferentially etches said dielectric relative to silicon, thereby forming a first hole through said first insulation layer, said nitride layer and said dielectric; depositing an electrical conductor in said first hole, thereby forming a strap wherein said first and second electrical elements are electrically connected.

Claim 7

Dependent Claim 13 words

The method of claim 4 wherein said insulation layer comprises a silicon oxide.

Claim 8

Dependent Claim 33 words

The method of claim 5 wherein said highly selective etch that preferentially etches said insulation layer relative to the nitride layer comprises an oxide:nitride etch having a selectivity ratio of at least 12:1.

Claim 9

Dependent Claim 27 words

The method of claim 6 wherein said highly selective oxide:nitride etch comprises a dry etch utilizing a high C:F ratio fluorocarbon in a high density plasma reactor.

Claim 10

Dependent Claim 30 words

The method of claim 6 wherein said dielectric comprises an oxide and said highly selective etch that preferentially etches said dielectric relative to silicon comprises a highly selective oxide:silicon etch.

Claim 11

Dependent Claim 24 words

The method of claim 4 further comprising: planarizing the strap; and depositing a second insulation layer over said first insulation layer and said strap.

Claim 12

Dependent Claim 12 words

The method of claim 4 wherein said dielectric covers said first element.

Claim 13

Dependent Claim 86 words

An integrated method of forming a strap and a contact within a semiconductor device, comprising: forming a strap in accordance with the method of claim 4; etching an aperture over a third electronic element by application of a highly selective etch that preferentially etches said first insulation layer relative to said nitride layer and application of a selective nitride etch, thereby forming a second hole through said first insulation layer and said nitride layer; depositing an electrical conductor in said second hole, thereby forming a contact.

Claim 14

Dependent Claim 58 words

The integrated method of claim 11 further comprising: depositing a second insulation layer over said device; etching an aperture over said contact thereby forming a third hole; depositing an electrical conductor in said third hole; planarizing said electrical conductor deposited in said third hole; and forming a metal line physically touching said electrical conductor in said third hole.

Claim 15

Dependent Claim 20 words

The method of claim 12 wherein said strap is planarized prior to depositing a second insulation layer over said device.

Claim 16

Dependent Claim 20 words

The method of claim 12 wherein said contact is planarized prior to depositing a second insulation layer over said device.

Claim 17

Dependent Claim 96 words

An integrated method of forming a strap and a contact in a semiconductor device, comprising: forming a strap in accordance with claim 9; etching an aperture over a third electronic element by alternating application of a highly selective etch that preferentially etches said insulation layer relative to said nitride layer and application of a selective nitride etch, thereby forming a second hole extending through said second insulation layer, said first insulation layer and said nitride layer; depositing an electrical conductor in said second hole, thereby forming a contact; electrically connecting said contact and a metal line.

Claim 18

Dependent Claim 26 words

A method of claim 15 wherein electrically connecting said contact and metal line comprises: planarizing said contact; and forming a metal line physically touching said contact.

Claim 19

Independent Claim 112 words

A method of electrically connecting a trench capacitor and a diffusion within a semiconductor device, comprising: forming an oxide cap over said trench capacitor; applying a nitride layer over said device; applying a first insulation layer over said nitride layer; exposing said trench capacitor and said diffusion by application of a highly selective etch that preferentially etches said insulation layer relative to said nitride layer, application of a selective nitride:oxide etch, and application of a selective oxide:silicon etch, wherein a first hole is formed exposing said trench capacitor and said diffusion; depositing an electrical conductor in said first hole, thereby forming a strap and electrically connecting said trench capacitor and said diffusion.

Claim 20

Independent Claim 112 words

A method of electrically connecting a trench capacitor and a diffusion within a semiconductor device, comprising: forming an oxide cap over said trench capacitor; applying a nitride layer over said device; applying a first insulation layer over said nitride layer; exposing said trench capacitor and said diffusion by application of a highly selective etch that preferentially etches said insulation layer relative to said nitride layer, application of a selective nitride:oxide etch, and application of a selective oxide:silicon etch, wherein a first hole is formed exposing said trench capacitor and said diffusion; depositing an electrical conductor in said first hole, thereby forming a strap and electrically connecting said trench capacitor and said diffusion.

Claim 21

Dependent Claim 35 words

The method of claim 17 wherein said insulation layer comprises a silicon oxide and said highly selective etch that preferentially etches said insulation layer relative to said nitride layer comprises a highly selective oxide:nitride etch.

Claim 22

Dependent Claim 13 words

The method of claim 17 wherein said insulation layer comprises doped silicon oxide.

Claim 23

Dependent Claim 13 words

The method of claim 17 wherein said insulation comprises phosphorous doped silicon oxide.

Claim 24

Dependent Claim 27 words

The method of claim 18 wherein said highly selective oxide:nitride etch comprises a dry etch utilizing a high C:F ratio fluorocarbon in a high density plasma reactor.

Claim 25

Dependent Claim 24 words

The method of claim 17 further comprising: planarizing said strap; and applying a second insulation layer over said first insulation layer and said strap.

Claim 26

Dependent Claim 34 words

The method of claim 17 wherein said device has at least one gate stack having a cap and a spacer, the cap and spacer comprising compounds selected from the group of oxide and nitride.

Claim 27

Dependent Claim 10 words

The method of claim 23 wherein said cap comprises nitride.

Claim 28

Dependent Claim 14 words

The method of claim 23 wherein said cap and said spacer both comprise nitride.

Claim 29

Dependent Claim 12 words

The method of claim 17 wherein said electrical conductor comprises p+ silicon.

Claim 30

Dependent Claim 122 words

An integrated method of forming a strap and a contact in a semiconductor device having a diffusion, a trench capacitor and a third electronic element, comprising: forming a strap in accordance with the method of claim 17; exposing said third electronic element by application of a highly selective etch that preferentially etches said insulation layer relative to said nitride layer and application of a selective nitride etch, thereby forming a second hole over said third electronic element; depositing an electrical conductor in said second hole, thereby forming a contact; depositing a second insulation layer over said device; exposing said contact; and electrically connecting said contact with a metal line thereby placing said third electronic element in electrical contact with said metal line.

Claim 31

Dependent Claim 20 words

The method of claim 27 wherein said strap and said contact are planarized prior to depositing said second insulation layer.

Claim 32

Dependent Claim 106 words

An integrated method of forming a strap and contact in a semiconductor device having a diffusion, a trench capacitor and a third electronic element, comprising: forming a strap in accordance with the method of claim 22; exposing the third electronic element by application of a highly selective etch that preferentially etches said first and second insulation layers relative to said nitride layer and application of a selective nitride etch, thereby forming a second hole; depositing an electrical conductor in said second hole, thereby forming a contact; electrically connecting said contact and a metal line wherein said third electronic element is electrically connected with said metal line.

Claim 33

Dependent Claim 119 words

An integrated method of forming a strap and a contact in a semiconductor device having a diffusion, a trench capacitor, and at least one gate stack having a cap and a spacer, comprising: forming a strap in accordance with the method of claim 24; depositing a second insulation layer; exposing a selected gate stack by applying a highly selective etch that preferentially etches said insulation layer relative to said nitride layer, and applying a selective nitride etch, thereby forming a second hole and exposing said selected gate stack; depositing an electrical conductor in said second hole, thereby forming a contact; electrically connecting said contact and a metal line, wherein said gate stack and said metal line are electrically connected.

Claim 34

Dependent Claim 132 words

An integrated method of forming a strap and a contact in a semiconductor device having a diffusion, a trench capacitor, and at least one gate stack having a cap and a spacer, comprising: forming a strap in accordance with the method of claim 23, wherein said cap comprises an oxide; depositing a second insulation layer; exposing a selected gate stack by applying a highly selective etch that preferentially etches said insulation layer relative to said nitride layer, and applying a selective nitride:oxide etch and then applying a selective oxide:nitride etch, thereby forming a second hole and exposing said selected gate stack; depositing an electrical conductor in said second hole, thereby forming a contact; electrically connecting said contact and a metal line, wherein said gate stack and said metal line are electrically connected.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-08-13	2000-02-12	2000-08-13	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-08-13	2004-02-12	2004-08-13	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-08-13	2008-02-12	2008-08-13	$7700.00	Window Closed / Lapsed

Plug strap process utilizing selective nitride and oxide etches

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