Patent US6063306A successfully refreshed from Google Patents.
US6063306A
Expired / Lapsed
US
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Chemical mechanical polishing slurry useful for copper/tantalum substrate
Assignee: CMC Materials LLC
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Filing: 1998-06-26
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Granted: 2000-05-16
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Expires: 2018-06-26
Abstract
Abstract The present invention is a first CMP slurry including an abrasive, an oxidizing agent, a complexing agent, a film forming agent and an organic amino compound, a second polishing slurry including an abrasive, an oxidizing agent, and acetic acid wherein the weight ratio of the oxidizing agent to acetic acid is at least 10 and a method for using the first and second polishing slurries sequentially to polish a substrate containing copper and containing tantalum or tantalum nitride or both tantalum and tantalum nitride.
Inventors
- 👤 Vlasta Brusic Kaufman
- 👤 Rodney C. Kistler
- 👤 Shumin Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:48
CPC Classifications
C; C09; C09K; C09K3/00; C09K3/14; C09K3/1454; C09K3/1463; C09G; C09G1/00; C09G1/02; C23; C23F; C23F3/00; H; H10; H10P; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
32 words
A chemical mechanical polishing slurry precursor comprising: at least one abrasive; at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof; and at least one complexing agent.
Claim 2
Dependent Claim
32 words
A chemical mechanical polishing slurry precursor comprising: at least one abrasive; at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof; and at least one complexing agent.
Claim 3
Dependent Claim
14 words
The chemical mechanical polishing slurry precursor of claim 1 including a film forming agent.
Claim 4
Dependent Claim
42 words
The chemical mechanical polishing slurry precursor of claim 1 wherein the complexing agent is selected from the group of compounds including acetic acid, citric acid, lactic acid, malonic acide, tartaric acid, succinic acid, oxalic acids, amino acids, salts thereof, and mixtures thereof.
Claim 5
Dependent Claim
16 words
The chemical mechanical polishing slurry precursor of claim 3 wherein the complexing agent is tartaric acid.
Claim 6
Dependent Claim
26 words
The chemical mechanical polishing slurry precursor of claim 4 wherein the tartaric acid is present in an amount ranging from 0.5 to about 5.0 weight percent.
Claim 7
Dependent Claim
16 words
The chemical mechanical polishing slurry precursor of claim 2 wherein the film forming agent is benzotriazole.
Claim 8
Dependent Claim
19 words
The chemical mechanical polishing slurry precursor of claim 6 including from about 0.01 to about 0.2 weight percent benzotriazole.
Claim 9
Dependent Claim
23 words
The chemical mechanical polishing slurry precursor of claim 1 wherein the slurry precursor has a pH of from about 4.0 to about 8.0.
Claim 10
Dependent Claim
27 words
The chemical mechanical polishing slurry precursor of claim 1 including from about 0.005 wt % to about 10.0 wt % of at least one organic amino compound.
Claim 11
Dependent Claim
31 words
A chemical mechanical polishing slurry comprising: at least one abrasive; at least one oxidizing agent; and at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof.
Claim 12
Dependent Claim
31 words
A chemical mechanical polishing slurry comprising: at least one abrasive; at least one oxidizing agent; and at least one organic amino compound selected from long chain alkylamines, alcoholamines and mixtures thereof.
Claim 13
Dependent Claim
13 words
The chemical mechanical polishing slurry of claim 10 including a film forming agent.
Claim 14
Dependent Claim
14 words
The chemical mechanical polishing slurry of claim 10 including at least one complexing agent.
Claim 15
Dependent Claim
15 words
The chemical mechanical polishing slurry of claim 11 wherein the film forming agent is benzotriazole.
Claim 16
Dependent Claim
18 words
The chemical mechanical polishing slurry of claim 13 including from about 0.01 to about 0.2 weight percent benzotriazole.
Claim 17
Dependent Claim
21 words
The chemical mechanical polishing slurry of claim 10 wherein the slurry has a pH of from about 4.0 to about 8.0.
Claim 18
Dependent Claim
26 words
The chemical mechanical polishing slurry of claim 10 including from about 0.005 wt % to about 10.0 wt % of at least one organic amino compound.
Claim 19
Dependent Claim
17 words
The chemical mechanical polishing slurry of claim 10 wherein the abrasive is at least one metal oxide.
Claim 20
Dependent Claim
28 words
The chemical mechanical polishing slurry of claim 17 wherein the metal oxide abrasive is selected from the group including alumina, ceria, germania, silica, titania, zirconia, and mixtures thereof.
Claim 21
Dependent Claim
19 words
The chemical mechanical polishing slurry of claim 10 wherein the abrasive is an aqueous dispersion of a metal oxide.
Claim 22
Dependent Claim
37 words
The chemical mechanical polishing slurry of claim 19 wherein the metal oxide abrasive consists of metal oxide aggregates having a size distribution less than about 1.0 micron and a mean aggregate diameter less than about 0.4 micron.
Claim 23
Dependent Claim
46 words
The chemical mechanical polishing slurry of claim 17 wherein the metal oxide abrasive consists of discrete, individual metal oxide spheres having a primary particle diameter less than 0.400 micron and a surface area ranging from about 10 m 2 /g to about 250 m 2 /g.
Claim 24
Dependent Claim
23 words
The chemical mechanical polishing slurry of claim 10 wherein the abrasive is selected from the group consisting of precipitated abrasives or fumed abrasives.
Claim 25
Dependent Claim
17 words
The chemical mechanical polishing slurry of claim 10 wherein the abrasive is an aqueous dispersion of alumina.
Claim 26
Dependent Claim
25 words
The chemical mechanical polishing slurry precursor of claim 10 wherein the oxidizing agent is selected from hydrogen peroxide, urea hydrogen peroxide, urea, and combinations thereof.
Claim 27
Dependent Claim
21 words
The chemical mechanical polishing slurry of claim 10 wherein the slurry has a Cu:Ta polishing selectivity ratio of at least 40.
Claim 28
Dependent Claim
31 words
A chemical mechanical polishing slurry comprising: alumina; at least one oxidizing agent; tartaric acid; benzotriazole; and at least one organic amino compound selected from long chain alkylamines, alcoholamines, and mixtures thereof.
Claim 29
Dependent Claim
31 words
A chemical mechanical polishing slurry comprising: alumina; at least one oxidizing agent; tartaric acid; benzotriazole; and at least one organic amino compound selected from long chain alkylamines, alcoholamines, and mixtures thereof.
Claim 30
Dependent Claim
15 words
The chemical mechanical polishing slurry of claim 26 wherein the organic amino compound is dodecylamine.
Claim 31
Dependent Claim
15 words
The chemical mechanical polishing slurry of claim 26 wherein the organic amino compound is triethanolamine.
Claim 32
Dependent Claim
24 words
The chemical mechanical polishing slurry of claim 26 wherein the oxidizing agent is selected from hydrogen peroxide, urea hydrogen peroxide, urea, and combinations thereof.
Claim 33
Dependent Claim
107 words
A chemical mechanical polishing slurry comprising: from about 0.5 to about 15 wt % alumina; from about 0.5 to about 5 wt % tartaric acid; from about 0.01 to about 0.2 wt % benzotriazole; from about 0.005 to about 10.0 wt % of an organic amino compound selected from dodecylamine, triethanolamine, and mixtures thereof; and an oxidizing agent comprising the admixture of from about 1 to about 20 wt % urea and from about 1 to about 12.0 wt % hydrogen peroxide wherein the chemical mechanical polishing slurry has a pH of from about 4 to about 8 and a Cu:Ta polishing selectivity ratio greater than 10.
Claim 34
Dependent Claim
107 words
A chemical mechanical polishing slurry comprising: from about 0.5 to about 15 wt % alumina; from about 0.5 to about 5 wt % tartaric acid; from about 0.01 to about 0.2 wt % benzotriazole; from about 0.005 to about 10.0 wt % of an organic amino compound selected from dodecylamine, triethanolamine, and mixtures thereof; and an oxidizing agent comprising the admixture of from about 1 to about 20 wt % urea and from about 1 to about 12.0 wt % hydrogen peroxide wherein the chemical mechanical polishing slurry has a pH of from about 4 to about 8 and a Cu:Ta polishing selectivity ratio greater than 10.
Claim 35
Dependent Claim
13 words
The chemical mechanical polishing slurry of claim 30 including at least one surfactant.
Claim 36
Dependent Claim
41 words
The chemical mechanical polishing slurry of claim 12 wherein the complexing agent is selected from the group of compounds including acetic acid, citric acid, lactic acid, malonic acide, tartaric acid, succinic acid, oxalic acids, amino acids, salts thereof, and mixtures thereof.
Claim 37
Dependent Claim
15 words
The chemical mechanical polishing slurry of claim 12 wherein the complexing agent is tartaric acid.
Claim 38
Dependent Claim
25 words
The chemical mechanical polishing slurry of claim 33 wherein the tartaric acid is present in an amount ranging from 0.5 to about 5.0 weight percent.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-05-16 | 2003-11-15 | 2004-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-05-16 | 2007-11-15 | 2008-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-05-16 | 2011-11-15 | 2012-05-16 | $7700.00 | Window Closed / Lapsed |