Polishing method

Claim 2

In the method of polishing the surfaces of silicon wafers sliced from single crystal ingots with a silica sol-amine combination, the improvement comprising selecting the amine from the group of water-soluble alkanolamines, providing sufficient amine so that at least 2.0 pbw are present for each 10 pbw of SiO 2 and adding no alkali metal hydroxide or ammonium hydroxide to said silica sol-alkanolamine combination upon dilution or during polishing.

Claim 3

The method of claim 1 wherein the alkanolamine is selected from the group of monoethanolamine, diethanolamine, triethanolamine, methanolamine, propanolamine and mixtures thereof.

Claim 4

The method of claim 2 wherein the alkanolamine is monoethanolamine.

Claim 5

The method of claim 2 wherein the silica sol-alkanolamine combination contains 2.48 to 10.58 pbw of monoethanolamine for each 10 pbw of SiO 2 .

Claim 6

In the method of polishing the surfaces of silicon wafers sliced from single crystal ingots using a polishing machine with a silica sol-amine combination, the improvement comprising: (a) combining an alkanolamine with a silica sol that contains about 20 to 60% by weight of SiO 2 , has 50 to 200 moles of SiO 2 per mole of M 2 O wherein is sodium or potassium and has an average particle size of 5 to 80 nanometers (nm), thereby forming a stable silica sol-alkanolamine combination, said alkanolamine being selected from the group consisting of methanolamine, ethanolamine (monoethanolamine), propanolamine, diethanolamine, triethanolamine and sufficient alkanolamine being added to provide at least two parts by weight of said amine for each 10 parts by weight of SiO 2 ; (b) diluting said silica sol-alkanolamine combination with water to provide a pH of about 10.5 or more and a SiO 2 concentration of about 3% by weight or less, said dilution being carried out without the addition of alkali metal or ammonium hydroxide; and (c) using said diluted silica sol-alkanolamine combination in said polishing machine without adding alkali metal or ammonium hydroxide.

Claim 7

In the method of polishing the surfaces of silicon wafers sliced from single crystal ingots using a polishing machine with a silica sol-amine combination, the improvement comprising: (a) combining an alkanolamine with a silica sol that contains about 20 to 60% by weight of SiO 2 , has 50 to 200 moles of SiO 2 per mole of M 2 O wherein is sodium or potassium and has an average particle size of 5 to 80 nanometers (nm), thereby forming a stable silica sol-alkanolamine combination, said alkanolamine being selected from the group consisting of methanolamine, ethanolamine (monoethanolamine), propanolamine, diethanolamine, triethanolamine and sufficient alkanolamine being added to provide at least two parts by weight of said amine for each 10 parts by weight of SiO 2 ; (b) diluting said silica sol-alkanolamine combination with water to provide a pH of about 10.5 or more and a SiO 2 concentration of about 3% by weight or less, said dilution being carried out without the addition of alkali metal or ammonium hydroxide; and (c) using said diluted silica sol-alkanolamine combination in said polishing machine without adding alkali metal or ammonium hydroxide.

Claim 8

The method of claim 5 wherein the alkanolamine is monoethanolamine and said silica sol-alkanolamine contains about 8 to 10 parts by weight of amine for each 10 parts by weight of SiO 2 .

Claim 9

The method of claim 5 wherein the silica sol-alkanolamine combination contains 2.48 to 10.58 parts by weight of monoethanolamine to 10 parts by weight of SiO 2 .