EP0896042A1
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EP
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A polishing composition including an inhibitor of tungsten etching
Assignee: CMC Materials LLC
•
Filing: 1998-07-28
•
Granted: —
•
Expires: 2018-07-28
Abstract
Abstract A chemical mechanical polishing composition and slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition and slurry to polish tungsten containing substrates.
Inventors
- 👤 Steven K. Grumbine
- 👤 Christopher C. Streinz
- 👤 Eric W.G. Hoglund
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 08:04
CPC Classifications
H; H10; H10P; H10P50/00; C; C23; C23F; C23F3/00; C09; C09G; C09G1/00; C09G1/02; C09K; C09K3/00; C09K3/14; C09K3/1454; C09K3/1463; H10P52/00; H10P52/40; H10P52/403
Claims Analysis
Total Claims: 66
Claim 1
Independent Claim
22 words
A chemical mechanical polishing composition comprising: a compound that is capable of etching tungsten; and at least one inhibitor of tungsten etching.
Claim 2
Dependent Claim
24 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is a compound that includes a nitrogen containing
functional group.
Claim 3
Dependent Claim
41 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is a compound including at least one functional group
selected from nitrogen containing heterocycles, sulfides, thiols, alkyl ammonium ions or
mixtures of functional groups in one compound.
Claim 4
Dependent Claim
36 words
The chemical mechanical polishing composition of claim 2, wherein the
compound that includes a nitrogen containing functional group is a nitrogen containing
heterocycle, a compound that forms alkylammonium ions, amino alkyls, amino acids and
mixtures thereof.
Claim 5
Dependent Claim
35 words
The chemical mechanical polishing composition of claim 2, wherein the
compound that includes a nitrogen containing functional groups is selected from the
group 2,3,5-trimethylpyrazine, 2-ethyl-3,5-dimethylpyrazine, quinoxaline, acetyl pyrrole,
pyridazine, histidine, pyrazine, benzimidazole and mixtures thereof.
Claim 6
Dependent Claim
36 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is selected from glutathione (reduced), cysteine, 2-mercapato
benzimidazole, cystine, thiophene, mercapato pyridine N-oxide, thiamine
hydrochloride, tetraethyl thiuram disulfide, 2,5-dimercapto-1,3-thiadiazole and mixtures
thereof.
Claim 7
Dependent Claim
54 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is a compound including an alkyl ammonium ion functional
group selected from Monoquat Isies (isostearylethylimididonium), cetyltrimethyl
ammonium hydroxide, Alkaterge E (2-heptadecenyl-4-ethyl-2 oxazoline 4-methanol),
Aliquat 336 (tricaprylmethyl ammonium chloride), Nuospet 101 (4,4
dimethyloxazolidine), tetrabutylammonium hydroxide, dodecylamine,
tetramethylammonium hydroxide and mixtures thereof.
Claim 8
Dependent Claim
32 words
The chemical mechanical polishing composition of claim 2, wherein the
compound that includes a nitrogen containing functional group is a compound that
forms alkylammonium ions at a pH less than about 9.
Claim 9
Dependent Claim
26 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten is selected from naturally occurring amino acids, synthetic amino
acids, and mixtures thereof.
Claim 10
Dependent Claim
16 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is glycine.
Claim 11
Dependent Claim
12 words
An aqueous solution of the chemical mechanical polishing composition of
claims 1-10.
Claim 12
Dependent Claim
34 words
The chemical mechanical polishing composition of claim 1, wherein the
inhibitor of tungsten etching is at least one compound that forms alkylammonium ions in
an aqueous solution having a pH less than about 5.0.
Claim 13
Dependent Claim
14 words
The chemical mechanical polishing composition of claim 1, including
aminopropylsilanol, aminopropylsiloxane, and mixtures thereof.
Claim 14
Dependent Claim
22 words
The chemical mechanical polishing composition of claim 1, wherein the
component capable of etching tungsten has a pH capable of etching tungsten.
Claim 15
Dependent Claim
23 words
The chemical mechanical polishing composition of claim 14, wherein the
pH of the compound capable of etching tungsten is greater than about 4.0.
Claim 16
Dependent Claim
21 words
The chemical mechanical polishing composition of claims 1-15, wherein
the compound capable of etching tungsten is at least one oxidizing agent.
Claim 17
Dependent Claim
17 words
The chemical mechanical polishing composition of claim 16, wherein the
oxidizing agent is at least one per-compound.
Claim 18
Dependent Claim
14 words
The chemical mechanical polishing composition of claim 17, wherein the
per-compound is hydrogen peroxide.
Claim 19
Dependent Claim
19 words
The chemical mechanical polishing composition of claim 18, including
from about 0.1 to about 50 weight percent hydrogen peroxide.
Claim 20
Dependent Claim
19 words
The chemical mechanical polishing composition of claim 19, including
from about 0.5 to about 10 weight percent hydrogen peroxide.
Claim 21
Dependent Claim
22 words
The chemical mechanical polishing composition of claims 1-20, wherein
the compound capable of etching tungsten is at least one fluoride containing compound.
Claim 22
Dependent Claim
15 words
The chemical mechanical polishing composition of claims 1-21, further
comprising at least one metal catalyst.
Claim 23
Dependent Claim
33 words
The chemical mechanical polishing composition of claim 22, wherein the
metal catalyst is an iron catalyst selected from the group consisting of inorganic iron
compounds and organic iron compounds having multiple oxidation states.
Claim 24
Dependent Claim
15 words
The chemical mechanical polishing composition of claim 23, wherein the
iron catalyst is ferric nitrate.
Claim 25
Dependent Claim
20 words
The chemical mechanical polishing composition of claim 24, including
from about 0.001 to about 2.0 weight percent ferric nitrate catalyst.
Claim 26
Dependent Claim
36 words
The chemical mechanical polishing composition of claim 1, wherein the
compound capable of etching tungsten is hydrogen peroxide and wherein the
composition further includes from about 0.001 to about 0.2 weight percent of an iron
catalyst.
Claim 27
Dependent Claim
20 words
A chemical mechanical polishing slurry including the chemical mechanical
composition of claims 1-26 and at least one metal oxide abrasive.
Claim 28
Dependent Claim
28 words
The chemical mechanical polishing slurry of claim 27, wherein the metal
oxide abrasive is selected from the group including alumina, ceria, germania, silica,
titania, zirconia, and mixtures thereof.
Claim 29
Dependent Claim
21 words
The chemical mechanical polishing slurry of claims 27-28, wherein the
metal oxide abrasive is an aqueous dispersion of a metal oxide.
Claim 30
Dependent Claim
37 words
The chemical mechanical polishing slurry of claims 27-29, wherein the
metal oxide abrasive consists of metal oxide aggregates having a size distribution less
than about 1.0 micron and a mean aggregate diameter less than about 0.4 micron.
Claim 31
Dependent Claim
46 words
The chemical mechanical polishing slurry of claims 27-29, wherein the
metal oxide abrasive consists of discrete, individual metal oxide spheres having a
primary particle diameter less than 0.400 micron and a surface area ranging from about
10 m 2 /g to about 250 m 2 /g.
Claim 32
Dependent Claim
30 words
The chemical mechanical polishing slurry of claims 27-31, wherein the
metal oxide abrasive has a surface area ranging from about 5 m 2 /g to about 430 m 2 /g.
Claim 33
Dependent Claim
29 words
The chemical mechanical polishing slurry of claim 32, wherein the metal
oxide abrasive has a surface area offrom about 30 m 2 /g to about 170 m 2 /g.
Claim 34
Dependent Claim
21 words
The chemical mechanical polishing slurry of claims 27-33, wherein the
metal oxide abrasive is a precipitated abrasive or a fumed abrasive.
Claim 35
Dependent Claim
15 words
The chemical mechanical polishing slurry of claims 27-34, wherein the
metal oxide abrasive is silica.
Claim 36
Dependent Claim
14 words
The chemical mechanical polishing slurry of claim 35, wherein the silica is
fumed silica.
Claim 37
Dependent Claim
14 words
The chemical mechanical polishing composition of claims 1-26, further
including at least one stabilizer.
Claim 38
Dependent Claim
14 words
The chemical mechanical polishing slurry of claims 27-36, further
including at least one stabilizer.
Claim 39
Dependent Claim
40 words
The chemical mechanical polishing composition of claim 37 or the
chemical mechanical polishing slurry of claim 38, including at least one stabilizer
selected from phosphoric acid, phthalic acid, citric acid, adipic acid, oxalic acid,
malonic acid, benzonitrile and mixtures thereof.
Claim 40
Dependent Claim
32 words
The chemical mechanical polishing composition or chemical mechanical
polishing slurry of claim 39, wherein the stabilizer is from about 1 equivalents per
catalyst to about 15 equivalents per catalyst of malonic acid.
Claim 41
Dependent Claim
55 words
A chemical mechanical polishing slurry comprising: from about 1.0 to about 15.0 weight percent silica; from about 0.001 to about 22 weight percent ferric nitrate; from about 1.0 to about 10.0 weight percent of at least one stabilizer;
and from about 0.001 to about 1.0 weight percent of at least one inhibitor of
tungsten etching.
Claim 42
Dependent Claim
56 words
A chemical mechanical polishing slurry comprising: from about 1.0 to about 15.0 weight percent silica; from about 0.001 to about 0.2 weight percent ferric nitrate; from about 1.0 to about 10.0 weight percent hydrogen peroxide;
at least one stabilizer; and from about 0.001 to about 1.0 weight percent of at least one inhibitor of
tungsten etching.
Claim 43
Dependent Claim
18 words
The chemical mechanical polishing slurry of claims 41 or 42, wherein the
inhibitor of tungsten etching is pyridazine.
Claim 44
Dependent Claim
24 words
The chemical mechanical polishing slurry of claims 41-43, wherein the
stabilizer is from about 1.0 to about 15 equivalents per catalyst of malonic acid.
Claim 45
Dependent Claim
73 words
A chemical mechanical polishing slurry comprising: from about 0.5 to about 15.0 weight percent silica; from about 0.001 to about 0.2 weight percent ferric nitrate catalyst; from about 0.5 to about 10.0 weight percent hydrogen peroxide;
at least one stabilizer; and from about 0.001 to about 1.0 weight percent of an inhibitor to tungsten
etching selected from glycine, aminopropylsilanol, aminopropylsiloxane,
and mixtures thereof, wherein the slurry has a pH less than about 9.
Claim 46
Dependent Claim
16 words
The chemical mechanical polishing slurry of claim 45, wherein the
inhibitor of tungsten etching is glycine.
Claim 47
Dependent Claim
24 words
The chemical mechanical polishing slurry of claims 45 or 46, wherein the
inhibitor of tungsten etching is the mixture of glycine, aminopropylsilanol, and
aminopropylsiloxane.
Claim 48
Dependent Claim
24 words
The chemical mechanical polishing slurry of claims 45-47, wherein the
stabilizer is from about 1 to about 5 equivalents per catalyst of malonic acid.
Claim 49
Independent Claim
87 words
A method for polishing a substrate including at least one tungsten layer
comprising the steps of; (a) admixing at least one compound that is capable of etching tungsten, at
least one inhibitor of tungsten etching and deionized water to give a chemical
mechanical polishing composition; (b) applying the chemical mechanical polishing composition to the substrate;
and (c) removing at least a portion of the tungsten layer from the substrate by
bringing a pad into contact with the substrate and moving the pad in relation to
the substrate.
Claim 50
Independent Claim
120 words
A method for polishing a substrate including at least one tungsten layer
comprising the steps of: (a) admixing at least one compound that is capable of etching tungsten, at
least one inhibitor of tungsten etching and deionized water to give a chemical
mechanical polishing composition; having a pH less than 9.0, wherein the inhibitor
of tungsten etching is an amino alkyl, a compound that forms alkylammonium
ions at a solution pH less than about 9.0 and mixtures thereof; (b) applying the chemical mechanical polishing composition to the substrate;
and (c) removing at least a portion of the tungsten layer from the substrate by
bringing a pad into contact with the substrate and moving the pad in relation to
the substrate.
Claim 51
Independent Claim
34 words
The method of claims 49 or 50, wherein the substrate further includes a
titanium and/or titanium nitride metal layer wherein at least a portion of the titanium
nitride layer is removed in step (c).
Claim 52
Independent Claim
15 words
The method of claims 49-51, wherein the compound capable of etching
tungsten is hydrogen peroxide.
Claim 53
Independent Claim
24 words
The method of claims 49-52, wherein the chemical mechanical
composition includes a catalyst selected from the group inorganic iron compounds and
organic iron compounds.
Claim 54
Dependent Claim
19 words
The method of claim 53 wherein the catalyst is from about 0.001 to
about 2.0 weight percent ferric nitrate.
Claim 55
Independent Claim
25 words
The method of claims 49-54, wherein the chemical mechanical
composition further comprises at least one metal oxide abrasive to give a chemical
mechanical polishing slurry.
Claim 56
Dependent Claim
25 words
The method of claim 55, wherein the metal oxide abrasive is selected
from the group including alumina, ceria, germania, silica, titania, zirconia, and mixtures
thereof.
Claim 57
Independent Claim
20 words
The method of claims 55 or 56, wherein the metal oxide abrasive is an
aqueous dispersion of a metal oxide.
Claim 58
Independent Claim
28 words
The method of claims 55-57, wherein the metal oxide abrasive is selected
from the group consisting of precipitated alumina, fumed alumina, precipitated silica,
fumed silica, and mixtures thereof.
Claim 59
Independent Claim
20 words
The method of claims 55-58, wherein the metal oxide abrasive is from
about 0.5 to about 15.0 weight percent silica.
Claim 60
Independent Claim
25 words
The method of claims 49-59, wherein the inhibitor of tungsten is selected
from the group naturally occurring amino acids, synthetic amino acids, and mixtures
thereof.
Claim 61
Independent Claim
13 words
The method of claims 49-60, wherein the inhibitor of tungsten etching is
glycine.
Claim 62
Independent Claim
31 words
The method of claims 49-60, wherein the inhibitor of tungsten etching is
at least one compound that forms alkylammonium ions in an aqueous solution having a
pH less than about 5.0.
Claim 63
Dependent Claim
17 words
The method of claim 49-62, wherein the inhibitor is selected from
glycine, aminopropylsilanol, aminopropylsiloxane, and mixtures thereof.
Claim 64
Independent Claim
118 words
A method for polishing a substrate including at least one tungsten layer
comprising: (a) admixing from about 0.5 to about 15.0 weight percent silica, from about
0.001 to about 0.2 weight percent ferric nitrate catalyst, from about 0.5 to about
10.0 weight percent hydrogen peroxide, at least one stabilizer; and from about
0.001 to about 1.0 weight percent glycine, and deionized water to give a
mechanical chemical polishing slurry having a pH of from about 2.0 to about 5.0; (b) applying the chemical mechanical polishing slurry to the substrate; and (c) removing at least a portion of the tungsten layer by bringing a pad into
contact with the substrate and moving the pad in relation to the substrate.
Claim 65
Dependent Claim
17 words
The method of claim 64, wherein the chemical mechanical polishing
slurry includes aminopropylsilanol, aminopropylsiloxane and mixtures thereof.
Claim 66
Independent Claim
122 words
A method for polishing a substrate including at least one tungsten layer
comprising: (a) admixing from about 0.5 to about 15.0 weight percent silica, from about
0.001 to about 0.2 weight percent ferric nitrate catalyst, from about 1.0 to about
10.0 weight percent hydrogen peroxide, from about 1 equivalent to about 15
equivalents per catalyst of malonic acid, from about 0.01 to about 0.5 weight of
at least one inhibitor of tungsten etching, and deionized water to give a
mechanical chemical polishing slurry; (b) applying the chemical mechanical polishing slurry to the substrate; and (c) removing at least a portion of the tungsten layer by bringing a pad into
contact with the substrate and moving the pad in relation to the substrate.
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