US6036877A
Expired / Lapsed
US
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Plasma reactor with heated source of a polymer-hardening precursor material
Assignee: Applied Materials Inc
•
Filing: 1996-05-13
•
Granted: 2000-03-14
•
Expires: 2016-05-13
Abstract
Abstract A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.
Inventors
- 👤 Kenneth S. Collins
- 👤 Michael Rice
- 👤 David W. Groechel
- 👤 Gerald Zheyao Yin
- 👤 Jon Mohn
- 👤 Craig A. Roderick
- 👤 Douglas Buchberger
- 👤 Chan-Lon Yang
- 👤 Yuen-Kui Wong
- 👤 Jeffrey Marks
- 👤 Peter Keswick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:19
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32871; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; H01F; H01F29/00; H01F29/14; H01F29/143; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32137; H01J37/32146; H01J37/32155; H01J37/32165; H01J37/32458; H01J37/32467; H01J37/32522; H01J37/3266; H01J37/32688; H01J37/32697; H01J37/32706; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P72/00; H10P72/70; H10P72/72; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3345; H01J2237/3346; H01J2237/338; H01J2237/3382
Claims Analysis
Total Claims: 75
Claim 1
Independent Claim
77 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; providing, in addition to said process gas, a source material of silicon or carbon in said chamber; generating a plasma within said chamber; maintaining said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 2
Dependent Claim
77 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; providing, in addition to said process gas, a source material of silicon or carbon in said chamber; generating a plasma within said chamber; maintaining said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 3
Dependent Claim
22 words
The process of claim 1 wherein the step of maintaining comprises heating said source material to at least a polymer condensation temperature.
Claim 4
Dependent Claim
88 words
The process of claim 2 wherein said etch process etches first and second different materials on said article at first and second etch rates respectively, said first etch rate being greater than said second etch rate corresponding to an etch selectivity of said first material to said second material which is a function of said first and second etch rates, and wherein said maintaining step further comprises: increasing a temperature of said source material into a temperature range above said polymer condensation temperature to increase said etch selectivity.
Claim 5
Dependent Claim
30 words
The process of claim 3 wherein said first material overlies said second material and said etchant creates openings through said first material to a expose portions of said second material.
Claim 6
Dependent Claim
47 words
The process of claim 4 wherein: said polymer precursor material provides material for polymer deposition on the exposed portions of said second material; said etchant precursor material provides material for etching said article; and said polymer deposition reduces etching of said second material to enhance etch selectivity.
Claim 7
Dependent Claim
39 words
The process of claim 5 wherein: a photoresist mask layer over said first material has openings therethrough defining said openings; and said polymer deposition reduces etching of said second material and of said photoresist material to enhance etch selectivity.
Claim 8
Dependent Claim
22 words
The process of claim 5 wherein said first material comprises an oxygen-containing material and said second material comprises a non-oxygen containing material.
Claim 9
Dependent Claim
27 words
The process of claim 2 wherein said maintaining step further comprises: increasing a temperature of said source material into a temperature range above said polymer condensation temperature.
Claim 10
Dependent Claim
24 words
The process of claim 8 wherein said temperature range is one wherein polymer formed on said wafer contains an amount of said source material.
Claim 11
Dependent Claim
14 words
The process of claim 8 wherein said temperature range lies above about 100° C.
Claim 12
Dependent Claim
14 words
The process of claim 8 wherein said temperature range lies above about 220° C.
Claim 13
Dependent Claim
14 words
The process of claim 9 wherein said temperature range lies above about 100° C.
Claim 14
Dependent Claim
13 words
The process of claim 9 wherein said temperature range lies above 220° C.
Claim 15
Dependent Claim
14 words
The process of claim 3 wherein said temperature range lies above about 100° C.
Claim 16
Dependent Claim
14 words
The process of claim 3 wherein said temperature range lies above about 220° C.
Claim 17
Dependent Claim
47 words
The process of claim 3 wherein said first material comprises an oxide, said second material comprises silicon or polysilicon, an etchant precursor of said process gas comprises fluorine, an polymer precursor of said process gas comprises at least fluorine and carbon and said source material comprises silicon.
Claim 18
Dependent Claim
64 words
The process of claim 16 further comprising applying RF power to said source material at an RF power level substantially reduced from a reference power level at which said source material when near said polymer condensation temperature provides a significant amount of fluorine scavenger material into said plasma, while increasing the temperature of said source material to compensate for the reduction in RF power.
Claim 19
Dependent Claim
31 words
The process of claim 17 wherein said RF power level is reduced by at least an integer number below said reference power level while said target temperature is only fractionally increased.
Claim 20
Dependent Claim
24 words
The process of claim 18 wherein said RF power level is reduced about four-fold and said target temperature is increased to about 240° C.
Claim 21
Dependent Claim
17 words
The process of claim 3 wherein said temperature range lies between about 180° C. and 220° C.
Claim 22
Dependent Claim
17 words
The process of claim 3 wherein said temperature range lies between about 300° C. and 700° C.
Claim 23
Dependent Claim
17 words
The process of claim 3 wherein said temperature range lies between about 240° C. and 500° C.
Claim 24
Dependent Claim
14 words
The process of claim 1 further comprising applying RF power to said source material.
Claim 25
Dependent Claim
39 words
The process of claim 23 wherein said source material comprises a scavenger for an etchant derived from said etchant precursor, and wherein said RF power applied to said source material is sufficient to promote significant scavenging of said etchant.
Claim 26
Dependent Claim
13 words
The process of claim 3 wherein said etch selectivity is at least 110:1.
Claim 27
Dependent Claim
25 words
The process of claim 3 wherein said temperature range lies between about 500° C. and 700° C. and said etch selectivity is at least 150:1.
Claim 28
Dependent Claim
21 words
The process of claim 3 wherein a photoresist selectivity of said first material to said second material is at least 3:1.
Claim 29
Dependent Claim
33 words
The process of claim 3 wherein said temperature range lies between about 400° C. and 700° C. and a photoresist selectivity of said first material to said second material is at least 5:1.
Claim 30
Dependent Claim
31 words
The process of claim 2 wherein the step of maintaining further comprises using said source material to change a process gas content ratio such that a substantially strengthened polymer is formed.
Claim 31
Dependent Claim
23 words
The process of claim 29 wherein said process gas content ratio includes at least one of: (a) carbon-to-fluorine; (b) hydrogen-to-fluorine; and (c) carbon-to-hydrogen.
Claim 32
Dependent Claim
68 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; providing a polymer-hardening precursor material in said chamber; generating a plasma within said chamber; maintaining said precursor material at a temperature greater than that temperature required to scavenge fluorine.
Claim 33
Dependent Claim
68 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; providing a polymer-hardening precursor material in said chamber; generating a plasma within said chamber; maintaining said precursor material at a temperature greater than that temperature required to scavenge fluorine.
Claim 34
Dependent Claim
22 words
The process of claim 31 wherein the step of maintaining comprises heating said precursor material to at least a polymer condensation temperature.
Claim 35
Dependent Claim
24 words
The process of claim 32 wherein said maintaining step comprises heating said polymer-hardening precursor material to a temperature range above said polymer condensation temperature.
Claim 36
Dependent Claim
24 words
The process of claim 33 wherein said temperature range is such that polymer formed on said wafer comprises material from said polymer-hardening precursor material.
Claim 37
Dependent Claim
48 words
The process of claim 33 wherein said first material comprises an oxide, said second material comprises silicon or polysilicon, said etchant precursor of said process gas comprises fluorine, said polymer precursor of said process gas comprises at least fluorine and carbon and said polymer-hardening precursor material comprises silicon.
Claim 38
Dependent Claim
14 words
The process of claim 33 wherein said temperature range lies above about 100° C.
Claim 39
Dependent Claim
13 words
The process of claim 33 wherein said temperature range lies above 220° C.
Claim 40
Dependent Claim
92 words
The process of claim 31 wherein said etch process etches first and second different materials on said article at first and second etch rates respectively, said first etch rate being greater than said second etch rate corresponding to an etch selectivity of said first material to said second material which is a function of said first and second etch rates, and wherein said maintaining step further comprises: increasing a temperature of said polymer-hardening precursor material to a temperature range above said polymer condensation temperature to achieve a corresponding increase said etch selectivity.
Claim 41
Dependent Claim
30 words
The process of claim 38 wherein said first material overlies said second material and said etchant creates openings through said first material to a expose portions of said second material.
Claim 42
Dependent Claim
47 words
The process of claim 39 wherein: said polymer precursor material provides material for polymer deposition on the exposed portions of said second material; said etchant precursor material provides material for etching said article; and said polymer deposition reduces etching of said second material to enhance etch selectivity.
Claim 43
Dependent Claim
39 words
The process of claim 40 wherein: a photoresist mask layer over said first material has openings therethrough defining said openings; and said polymer deposition reduces etching of said second material and of said photoresist material to enhance etch selectivity.
Claim 44
Dependent Claim
22 words
The process of claim 40 wherein said first material comprises an oxygen-containing material and said second material comprises a non-oxygen containing material.
Claim 45
Dependent Claim
14 words
The process of claim 38 wherein said temperature range lies above about 100° C.
Claim 46
Dependent Claim
13 words
The process of claim 38 wherein said temperature range lies above 220° C.
Claim 47
Dependent Claim
17 words
The process of claim 38 wherein said temperature range lies between about 180° C. and 220° C.
Claim 48
Dependent Claim
17 words
The process of claim 28 wherein said temperature range lies between about 300° C. and 700° C.
Claim 49
Dependent Claim
17 words
The process of claim 38 wherein said temperature range lies between about 240° C. and 500° C.
Claim 50
Dependent Claim
15 words
The process of claim 31 further comprising applying RF power to said polymer-hardening precursor material.
Claim 51
Dependent Claim
41 words
The process of claim 48 wherein said polymer-hardening precursor material comprises a scavenger for an etchant derived from said etchant precursor, and wherein said RF power applied to said polymer-hardening precursor material is sufficient to promote significant scavenging of said etchant.
Claim 52
Dependent Claim
15 words
The process of claim 31 further comprising applying RF power to said polymer-hardening precursor material.
Claim 53
Dependent Claim
63 words
The process of claim 50 wherein said RF power is applied to said polymer-hardening precursor material at an RF power level substantially reduced from a reference power level at which said polymer-hardening precursor material provides a significant amount of fluorine scavenger material into said plasma near said polymer condensation temperature, while increasing said target temperature to compensate for the reduction in RF power.
Claim 54
Dependent Claim
31 words
The process of claim 51 wherein said RF power level is reduced by at least an integer number below said reference power level while said target temperature is only fractionally increased.
Claim 55
Dependent Claim
33 words
The process of claim 51 wherein said RF power level is reduced approximately four-fold below said reference power level while said target temperature is increased to on the order of about 240° C.
Claim 56
Dependent Claim
26 words
The process of claim 31 wherein said polymer-hardening precursor material is a member of a class of materials comprising silicon, carbon, silicon carbide and silicon nitride.
Claim 57
Dependent Claim
33 words
The process of claim 31 wherein the step of providing said polymer-hardening precursor material comprises providing a quickly removable piece of said polymer-hardening precursor material separate from integral structures of said reactor chamber.
Claim 58
Dependent Claim
20 words
The process of claim 55 wherein the step of heating comprises one of: (a) inductively heating and (b) radiantly heating.
Claim 59
Dependent Claim
52 words
The process of claim 56 wherein the step of maintaining further comprises controlling a temperature of said polymer-hardening precursor material to a selected temperature by measuring said temperature by sensing radiation from said polymer-hardening precursor material and heating said precursor material so as to maintain the measured temperature near said selected temperature.
Claim 60
Dependent Claim
53 words
The process of claim 57 wherein the step of measuring comprises remotely sensing radiation from said polymer-hardening precursor material through a port, and the step of heating comprises heating said polymer-hardening precursor material through a window, wherein said port is one of: (a) a portion of said window, (b) separate from said window.
Claim 61
Dependent Claim
52 words
The process of claim 58 wherein the step of maintaining comprises radiating heat at a wavelength for which said window is at least nearly transmissive and wherein the step of measuring temperature comprises sensing radiation from said polymer-hardening precursor material at a wavelength at which said port is at least nearly transmissive.
Claim 62
Dependent Claim
88 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; generating a plasma within said chamber; providing, in addition to said process gas, a source material of silicon or carbon in said chamber; applying RF bias power to said source material to at least maintain said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 63
Dependent Claim
88 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; generating a plasma within said chamber; providing, in addition to said process gas, a source material of silicon or carbon in said chamber; applying RF bias power to said source material to at least maintain said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 64
Dependent Claim
60 words
The process of claim 60 wherein said etch process etches first and second different materials on said article at first and second etch rates respectively, said first etch rate being greater than said second etch rate corresponding to an etch selectivity of said first material to said second material which is a function of said first and second etch rates.
Claim 65
Dependent Claim
30 words
The process of claim 61 wherein said first material overlies said second material and said etchant creates openings through said first material to a expose portions of said second material.
Claim 66
Dependent Claim
47 words
The process of claim 62 wherein: said polymer precursor material provides material for polymer deposition on the exposed portions of said second material; said etchant precursor material provides material for etching said article; and said polymer deposition reduces etching of said second material to enhance etch selectivity.
Claim 67
Dependent Claim
39 words
The process of claim 63 wherein: a photoresist mask layer over said first material has openings therethrough defining said openings; and said polymer deposition reduces etching of said second material and of said photoresist material to enhance etch selectivity.
Claim 68
Dependent Claim
22 words
The process of claim 63 wherein said first material comprises an oxygen-containing material and said second material comprises a non-oxygen containing material.
Claim 69
Dependent Claim
88 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; generating a plasma within said chamber; providing, in addition to said process gas, a source material of a polymer-hardening precursor in said chamber; applying RF bias power to said source material to at least maintain said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 70
Dependent Claim
88 words
A plasma etch process comprising: providing a chamber within which to carry out said process; supporting an article to be processed on a support in the chamber; supplying a process gas containing at least etchant and polymer precursor materials; generating a plasma within said chamber; providing, in addition to said process gas, a source material of a polymer-hardening precursor in said chamber; applying RF bias power to said source material to at least maintain said source material at a temperature greater than that temperature required to scavenge fluorine.
Claim 71
Dependent Claim
60 words
The process of claim 66 wherein said etch process etches first and second different materials on said article at first and second etch rates respectively, said first etch rate being greater than said second etch rate corresponding to an etch selectivity of said first material to said second material which is a function of said first and second etch rates.
Claim 72
Dependent Claim
30 words
The process of claim 67 wherein said first material overlies said second material and said etchant creates openings through said first material to a expose portions of said second material.
Claim 73
Dependent Claim
47 words
The process of claim 68 wherein: said polymer precursor material provides material for polymer deposition on the exposed portions of said second material; said etchant precursor material provides material for etching said article; and said polymer deposition reduces etching of said second material to enhance etch selectivity.
Claim 74
Dependent Claim
39 words
The process of claim 69 wherein: a photoresist mask layer over said first material has openings therethrough defining said openings; and said polymer deposition reduces etching of said second material and of said photoresist material to enhance etch selectivity.
Claim 75
Dependent Claim
22 words
The process of claim 69 wherein said first material comprises an oxygen-containing material and said second material comprises a non-oxygen containing material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |