US5203956A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for performing in-situ etch of a CVD chamber
Assignee: LSI Corp
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Filing: 1991-11-18
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Granted: 1993-04-20
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Expires: 2011-11-18
Abstract
Abstract During the cleaning of CVD chamber walls with an etch gas of NF3, the reaction chamber walls are heated to above 65 DEG C. while maintaining a relatively low chamber pressure during etching of the chamber with NF3. Any reaction of the NF3 with the quartz (SiO2) walls of the chamber, and with any reaction by-products remaining in the chamber, will not condense on the walls of the chamber, since, at this relatively high temperature, these reaction products will be volatile and will be purged away with the NF3.
Inventors
- 👤 Keith J. Hansen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 13:49
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/44; C23C16/4401; C23C16/4402; C23C16/4405; C23C16/455; C23C16/45561; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/032; H10W20/033; H10W20/042; H10W20/045; H10W20/052; H10W20/0526
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
71 words
A method of performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber comprising the steps of: heating walls of said chamber in said cold-wall type processing system to a temperature of between approximately 65° C. and approximately 90° C.; injecting fluorine-based etching gas into said chamber; and supplying RF power to energize said etching gas to etch said walls of said chamber.
Claim 2
Independent Claim
71 words
A method of performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber comprising the steps of: heating walls of said chamber in said cold-wall type processing system to a temperature of between approximately 65° C. and approximately 90° C.; injecting fluorine-based etching gas into said chamber; and supplying RF power to energize said etching gas to etch said walls of said chamber.
Claim 3
Dependent Claim
21 words
The method of claim 1 wherein said chamber is maintained at approximately 80 mtorr during said step of supplying RF power.
Claim 4
Dependent Claim
31 words
The method of claim 1 further comprising the step of injecting H 2 into said chamber after step of supplying RF power to flush out residue remaining from said in-situ etch.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein said fluorine-based etching gas is NF 3 .
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-04-19 | 1996-10-19 | 1997-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-04-19 | 2000-10-19 | 2001-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-04-19 | 2004-10-19 | 2005-04-20 | $7700.00 | Window Closed / Lapsed |