US5556501A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon scavenger in an inductively coupled RF plasma reactor
Assignee: Applied Materials Inc
•
Filing: 1993-04-01
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Granted: 1996-09-17
•
Expires: 2013-04-01
Abstract
Abstract A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.
Inventors
- 👤 Kenneth S. Collins
- 👤 Craig A. Roderick
- 👤 John R. Trow
- 👤 Chan-Lon Yang
- 👤 Jerry Y. Wong
- 👤 Jeffrey Marks
- 👤 Peter R. Keswick
- 👤 David W. Groechel
- 👤 II Jay D. Pinson
- 👤 Tetsuya Ishikawa
- 👤 Lawrence C. Lei
- 👤 Masato M. Toshima
- 👤 Gerald Z. Yin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:48
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32798; H01J37/32853; H01J37/32871; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; H01F; H01F29/00; H01F29/14; H01F29/143; H01J37/32009; H01J37/32082; H01J37/32091; H01J37/321; H01J37/3211; H01J37/32137; H01J37/32146; H01J37/32155; H01J37/32165; H01J37/32174; H01J37/32192; H01J37/32211; H01J37/3222; H01J37/32293; H01J37/32458; H01J37/32522; H01J37/3266; H01J37/32688; H01J37/32697; H01J37/32706; H05; H05H; H05H1/00; H05H1/24; H05H1/46; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
168 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b ) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a second electrode disposed above said cathode electrode and comprising silicon for chemically interacting with components of said processing gas; wherein said second electrode is controllably heated to increase its reactivity.
Claim 2
Dependent Claim
168 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b ) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a second electrode disposed above said cathode electrode and comprising silicon for chemically interacting with components of said processing gas; wherein said second electrode is controllably heated to increase its reactivity.
Claim 3
Dependent Claim
19 words
An RF plasma processing apparatus according to claim 1 wherein said second electrode is in contact with the plasma.
Claim 4
Dependent Claim
23 words
An RF plasma processing apparatus according to claim 1 wherein said second electrode is coupled through the plasma to the RF power source.
Claim 5
Dependent Claim
29 words
An RF plasma processing apparatus according to claim 1 wherein the first RF power signal has a frequency in the range of about 300 kHz to about 3 MHz.
Claim 6
Dependent Claim
29 words
An RF plasma processing apparatus according to claim 1 wherein the second RF power signal has a frequency in the range of about 300 kHz to about 3 MHz.
Claim 7
Dependent Claim
20 words
The apparatus of claim 1, wherein said RF power source means supplies a third RF signal to said second electrode.
Claim 8
Dependent Claim
11 words
The apparatus of claim 1, wherein said second electrode is grounded.
Claim 9
Dependent Claim
22 words
An RF plasma processing apparatus according to claim 1, wherein said coil antenna comprises one or more turns in a spiral arrangement.
Claim 10
Dependent Claim
18 words
An RF plasma processing apparatus according to claim 8, wherein said solid source of silicon is an electrode.
Claim 11
Dependent Claim
30 words
An RF plasma processing apparatus according to claim 9, wherein said RF power source means supplies a third RF signal to said electrode which is a solid source of silicon.
Claim 12
Dependent Claim
200 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a solid source of silicon in the chamber apart from said workpieces being processed and from said workpiece support for chemically interacting with components of said processing gas; wherein said vacuum chamber includes a top chamber portion enclosing a space overlying said workpiece support member and having a controllably heated dielectric wall through which said coil antenna couples said RF energy into said chamber.
Claim 13
Dependent Claim
200 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a solid source of silicon in the chamber apart from said workpieces being processed and from said workpiece support for chemically interacting with components of said processing gas; wherein said vacuum chamber includes a top chamber portion enclosing a space overlying said workpiece support member and having a controllably heated dielectric wall through which said coil antenna couples said RF energy into said chamber.
Claim 14
Dependent Claim
15 words
The apparatus of claim 11, further including heating means for controllably heating said dielectric wall.
Claim 15
Dependent Claim
191 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a solid source of silicon in the chamber apart from said workpieces being processed and from said workpiece support for chemically interacting with components of said processing gas; wherein said solid source of silicon is disposed in a space overlying said workpiece support member and supported in a controllably heated portion of said vacuum chamber.
Claim 16
Dependent Claim
191 words
An RF plasma processing apparatus for processing of workpieces comprising: a) a vacuum chamber in which a plasma is generated; b) a workpiece support member adapted for supporting workpieces to be processed within the chamber; c) a gas inlet mounted in the chamber for supplying a plasma precursor processing gas to the chamber; d) RF power source means for supplying first and second RF power signals; e) a coil antenna coupling RF energy from the first RF power signal into the chamber so as to form a high density plasma from said processing gas; f) a cathode electrode below or part of the workpiece support member electrically coupled to the second RF power signal so as to create an electric field which assists in attracting charged particles from the plasma toward the cathode electrode; and g) a solid source of silicon in the chamber apart from said workpieces being processed and from said workpiece support for chemically interacting with components of said processing gas; wherein said solid source of silicon is disposed in a space overlying said workpiece support member and supported in a controllably heated portion of said vacuum chamber.
Claim 17
Dependent Claim
15 words
The apparatus of claim 13, further including heating means for controllably heating said heated portion.
Claim 18
Dependent Claim
27 words
An RF plasma processing apparatus according to claim 13, wherein said coil antenna is disposed intermediate between said workpiece support member and said solid source of silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-09-17 | 2000-03-18 | 2000-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-09-17 | 2004-03-18 | 2004-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-09-17 | 2008-03-18 | 2008-09-17 | $7700.00 | Window Closed / Lapsed |