EP0343017A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Reactive ion etching apparatus
Assignee: NEC Corp
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Filing: 1989-05-22
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Granted: —
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Expires: 2009-05-22
Abstract
Abstract In order to correct plasma divergence in an electron cyclotron resonance etching apparatus, a magnetic throttle is provided. In one embodiment, the magnetic throttling is induced by a magnetic coil (40) disposed in a manner to surround a chamber (42) in which the etching is performed or disposed adjacent the specimen (44).
Inventors
- 👤 Seiji Samukawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:54
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; H01J37/32009; H01J37/32357; H01J37/3266; H01J37/32678; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H01J2237/3345
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
150 words
A reactive ion etching apparatus, comprising: a plasma chamber to which a reactive gas and a microwave are applied, said microwave having a predetermined frequency; first magnetic field generator which is provided around the outside of said plasma chamber and supplies said plasma chamber with a predetermined strength of magnetic field, a reactive gas plasma being generated within said plasma chamber by inducing electron cyclotron resonance; a reaction chamber which communicates with said plasma chamber through an opening and in which a specimen substrate is positioned on a substrate support disk, said reaction chamber receiving plasma streams from said plasma chamber under the influence of a magnetic field produced by said first magnetic field generator; and second magnetic field generator for modifying said magnetic field produced by said first magnetic field generator in a manner wherein said plasma stream is directed substantially normally to the surface of said specimen substrate.
Claim 2
Dependent Claim
150 words
A reactive ion etching apparatus, comprising: a plasma chamber to which a reactive gas and a microwave are applied, said microwave having a predetermined frequency; first magnetic field generator which is provided around the outside of said plasma chamber and supplies said plasma chamber with a predetermined strength of magnetic field, a reactive gas plasma being generated within said plasma chamber by inducing electron cyclotron resonance; a reaction chamber which communicates with said plasma chamber through an opening and in which a specimen substrate is positioned on a substrate support disk, said reaction chamber receiving plasma streams from said plasma chamber under the influence of a magnetic field produced by said first magnetic field generator; and second magnetic field generator for modifying said magnetic field produced by said first magnetic field generator in a manner wherein said plasma stream is directed substantially normally to the surface of said specimen substrate.
Claim 3
Dependent Claim
24 words
A reactive ion etching apparatus as claimed in claim 1, wherein said second magnetic field is provided around the outside of said reaction chamber.
Claim 4
Dependent Claim
29 words
A reactive ion etching apparatus as claimed in claim 1, wherein said second magnetic field is provided within said reaction chamber such as to surround said substrate supporter table.
Claim 5
Dependent Claim
106 words
A reactive ion etching apparatus, comprising: a plasma chamber to which a reactive gas is applied, said microwave generating a reactive gas plasma; a reaction chamber which communicates with said plasma chamber through an orifice and in which a specimen substrate is positioned on a substrate supporter disk, said reaction chamber receiving plasma streams from said plasma chamber under the influence of a pressure difference between said plasma chamber and said reaction chamber; and a magnetic field generator for controlling the plasma streams received by said reaction chamber in a manner wherein said plasma streams are directed substantially normally to the surface of said specimen substrate.
Claim 6
Dependent Claim
106 words
A reactive ion etching apparatus, comprising: a plasma chamber to which a reactive gas is applied, said microwave generating a reactive gas plasma; a reaction chamber which communicates with said plasma chamber through an orifice and in which a specimen substrate is positioned on a substrate supporter disk, said reaction chamber receiving plasma streams from said plasma chamber under the influence of a pressure difference between said plasma chamber and said reaction chamber; and a magnetic field generator for controlling the plasma streams received by said reaction chamber in a manner wherein said plasma streams are directed substantially normally to the surface of said specimen substrate.
References Cited (Backward Citations)
No citation records indexed.
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