US4513022A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for amorphous silicon films
Assignee: Xerox Corp
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Filing: 1984-05-25
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Granted: 1985-04-23
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Expires: 2004-05-25
Abstract
Abstract This invention is directed to a process for preparing semiconducting and photoelectronic devices comprised of a first electrode means, a second counter electrode means, a receptacle means for the first electrode means and the second counter electrode means, a substrate means to be coated contained on the first electrode means, which substrate is in the form of a cylindrical member, and a gas inlet means, a gas exhaust means, wherein a silane gas is introduced into the receptacle in a crossflow direction, perpendicular to the axis of the cylindrical member.
Inventors
- 👤 Frank Jansen
- 👤 Joseph Mort
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 04:24
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/503; H; H01; H01J; H01J37/00; H01J37/32
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
117 words
A process for preparing amorphous silicon photoconductors which comprises providing a vacuum chamber, containing therein a first electrode means, and a second counter electrode means, providing a cylindrical member on the first electrode means, heating the cylindrical member with heating elements contained in the first electrode means, to a temperature ranging from about 100° C. to about 300° C., causing the first electrode means to axially rotate, introducing a silane gas into the chamber means at a crossflow direction with respect to the cylindrical member, applying a current to the first electrode means, applying a current to the second electrode means, whereby the silane gas introduced is decomposed causing deposition of amorphous silicon on the cylindrical surface.
Claim 2
Dependent Claim
117 words
A process for preparing amorphous silicon photoconductors which comprises providing a vacuum chamber, containing therein a first electrode means, and a second counter electrode means, providing a cylindrical member on the first electrode means, heating the cylindrical member with heating elements contained in the first electrode means, to a temperature ranging from about 100° C. to about 300° C., causing the first electrode means to axially rotate, introducing a silane gas into the chamber means at a crossflow direction with respect to the cylindrical member, applying a current to the first electrode means, applying a current to the second electrode means, whereby the silane gas introduced is decomposed causing deposition of amorphous silicon on the cylindrical surface.
Claim 3
Dependent Claim
25 words
A process in accordance with claim 1 wherein the amorphous silicon is deposited in a thickness of from about 5 microns to about 60 microns.
Claim 4
Dependent Claim
42 words
A process in accordance with claim 1 wherein the amorphous silicon deposited contains from about 65 percent by weight to about 95 percent by weight of silicon, and from about 5 percent by weight to about 35 percent by weight of hydrogen.
Claim 5
Dependent Claim
28 words
A process in accordance with claim 1 wherein the silane gas is introduced into the chamber means at a flow rate of up to 5 liters per minute.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-04-22 | 1988-10-22 | 1989-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-04-22 | 1992-10-22 | 1993-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-04-22 | 1996-10-22 | 1997-04-23 | $7700.00 | Window Closed / Lapsed |