EP0403418A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
High density plasma deposition and etching apparatus
Assignee: Aviza Technology Inc
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Filing: 1990-06-12
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Granted: —
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Expires: 2010-06-12
Abstract
Abstract The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introduced and which is used alone or in conjunction with a process chamber (18) where specimen substrates (20) are located to either deposit or etch films from a substrate or to sputter deposit films to a substrate. The plasma etching, deposition and/or sputtering system comprises the high density RF plasma generator, the external magnetic field, the gas injection and control system, the antenna system (15) and associated power supplies (48), the process chamber (18), and the means to couple plasma from the generator to substrates or targets, including magnetic means (36) to enhance plasma uniformity at the substrates (20) or targets (92).
Inventors
- 👤 Gregor Campbell
- 👤 Robert W. Conn
- 👤 Tatsuo Shoji
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 17:05
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/3211; H01J37/32431; H01J37/3266; H01J37/32688
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
70 words
A plasma deposition or etching apparatus where gas is introduced into a plasma generator and is converted to plasma by the action of an RF field provided by an antenna and an axial magnetic field provided by magnetic field coils and said plasma is transported along the magnetic field into a separate process chamber to a substrate where either a film is formed or an existing film is etched away.
Claim 2
Dependent Claim
70 words
A plasma deposition or etching apparatus where gas is introduced into a plasma generator and is converted to plasma by the action of an RF field provided by an antenna and an axial magnetic field provided by magnetic field coils and said plasma is transported along the magnetic field into a separate process chamber to a substrate where either a film is formed or an existing film is etched away.
Claim 3
Dependent Claim
122 words
A plasma deposition or etching apparatus comprising of: (a) a plasma generator chamber into which gases are injected and converted to plasma by the action of an RF electric field provided by an antenna mounted on the generator chamber (b) a means to apply RF power to the antenna a process chamber connected to the generator chamber which is evacuated with vacuum pumps and houses an electrically isolated substrate holder onto which a substrate is mounted (c) a gas injection system for delivering gases into the process chamber (d) a magnetic coils means to provide an axial magnetic field in the plasma generator and additional magnetic coil(s) to transport the plasma from the generator into the process chamber and to the substrate.
Claim 4
Dependent Claim
122 words
A plasma deposition or etching apparatus comprising of: (a) a plasma generator chamber into which gases are injected and converted to plasma by the action of an RF electric field provided by an antenna mounted on the generator chamber (b) a means to apply RF power to the antenna a process chamber connected to the generator chamber which is evacuated with vacuum pumps and houses an electrically isolated substrate holder onto which a substrate is mounted (c) a gas injection system for delivering gases into the process chamber (d) a magnetic coils means to provide an axial magnetic field in the plasma generator and additional magnetic coil(s) to transport the plasma from the generator into the process chamber and to the substrate.
Claim 5
Dependent Claim
29 words
A plasma deposition or etching apparatus as claimed in claim 2 where RF power is applied to the substrate so that a negative bias is applied to the substrate.
Claim 6
Dependent Claim
66 words
An RF ion source comprising: (a) a plasma generation chamber, an antenna means to launch rf waves into said generation chamber which act in combination with an axial magnetic field to generate a dense plasma (b) a magnetic means for providing an axial magnetic field in the generator chamber (c) ion extraction electrodes adjacent to said plasma generator so as to extract ions from the plasma.
Claim 7
Dependent Claim
66 words
An RF ion source comprising: (a) a plasma generation chamber, an antenna means to launch rf waves into said generation chamber which act in combination with an axial magnetic field to generate a dense plasma (b) a magnetic means for providing an axial magnetic field in the generator chamber (c) ion extraction electrodes adjacent to said plasma generator so as to extract ions from the plasma.
Claim 8
Dependent Claim
37 words
An antenna, comprising: (a) A first current loop, the first current loop having a current flow in a first direction; and (b) A second current loop, the second current having a current flow in a second direction.
Claim 9
Dependent Claim
37 words
An antenna, comprising: (a) A first current loop, the first current loop having a current flow in a first direction; and (b) A second current loop, the second current having a current flow in a second direction.
Claim 10
Dependent Claim
21 words
The antenna of claim 5, wherein the first direction of current flow is opposite to the second direction of current flow.
Claim 11
Dependent Claim
24 words
The antenna of claim 6, wherein the first direction of current flow is clockwise, and the second direction of current flow is counter clockwise.
Claim 12
Dependent Claim
32 words
The antenna of claim 6, wherein the first current loop resides in a first plane and the second current loop resides in a second plane, the first and second planes being parallel.
Claim 13
Dependent Claim
43 words
The antenna of claim 8, wherein the first current loop and the second current loop are separated by a distance, the distance being selected so as to satisfy the equation. [w/w c ● w p ²/C²k z ²]² = 1+ (3.83/k z a)²
Claim 14
Dependent Claim
27 words
The antenna of claim 9, wherein the antenna radiates radio frequency electromagnetic waves, the antenna receiving radio frequency current from a first conductor and a second conductor.
Claim 15
Dependent Claim
79 words
The antenna of claim 10, wherein the first current loop has a first terminal and a second terminal, and the second current loop has a first terminal and a second terminal, the first conductor being connected to the first terminal of the first current loop and to the second terminal of the second current loop, the second conductor being connected to the second terminal of the first current loop and to the first terminal of the second current loop.
Claim 16
Dependent Claim
32 words
The antenna of claim 11, wherein the first current loop has a longitudinal axis and the second current loop has a longitudinal axis, the first and second current loops being substantially coaxial.
Claim 17
Dependent Claim
35 words
The antenna of claim 12, wherein the first terminal of the first current loop is closer to the first terminal of the second current loop than to the second terminal of the second current loop.
Claim 18
Dependent Claim
52 words
The antenna of claim 10, wherein the first current loop has a first terminal and a second terminal, the first terminal being substantially diametrically opposite to the second terminal, the second current loop having a first terminal and a second terminal, the first terminal being substantially diametrically opposite to the second terminal.
Claim 19
Dependent Claim
54 words
The antenna of claim 14, wherein the first conductor is connected to the first terminal of the second current loop, the second terminal of the second current loop is connected to the second terminal of the first current loop, and the first terminal of the first current loop is connected to the second conductor.
Claim 20
Dependent Claim
18 words
The antenna of claim 15, wherein radio frequency current flows in a first and second helically shaped path.
Claim 21
Dependent Claim
156 words
A plasma processing apparatus, comprising: (a) An antenna, the antenna radiating electromagnetic waves; (b) a plasma generation chamber, the plasma generation chamber being proximate to and in electromagnetic communication with the antenna; (c) a first fluid injector, the first fluid injector introducing a fluid into the plasma generation chamber, thereby permitting the creation of a plasma within the plasma generation chamber; (d) a magnetic field generator, the magnetic field generator generating a magnetic field; (e) a process chamber, the plasma being transported to the process chamber by the magnetic field; (f) a second fluid injector, the second fluid injector introducing a fluid into the process chamber. (g) a current controller, the current controller controlling the current within the magnetic field generator, thereby controlling plasma shape; (h) a substrate holder, the substrate holder residing within the process chamber; (i) a substrate, the substrate being mounted on the substrate holder, the substrate thereby being subjected to the plasma.
Claim 22
Dependent Claim
156 words
A plasma processing apparatus, comprising: (a) An antenna, the antenna radiating electromagnetic waves; (b) a plasma generation chamber, the plasma generation chamber being proximate to and in electromagnetic communication with the antenna; (c) a first fluid injector, the first fluid injector introducing a fluid into the plasma generation chamber, thereby permitting the creation of a plasma within the plasma generation chamber; (d) a magnetic field generator, the magnetic field generator generating a magnetic field; (e) a process chamber, the plasma being transported to the process chamber by the magnetic field; (f) a second fluid injector, the second fluid injector introducing a fluid into the process chamber. (g) a current controller, the current controller controlling the current within the magnetic field generator, thereby controlling plasma shape; (h) a substrate holder, the substrate holder residing within the process chamber; (i) a substrate, the substrate being mounted on the substrate holder, the substrate thereby being subjected to the plasma.
Claim 23
Dependent Claim
26 words
The plasma processing apparatus of claim 17, further comprising an auxiliary radio frequency generator, the auxiliary radio frequency generator applying radio frequency power to the substrate.
Claim 24
Dependent Claim
57 words
The plasma processing apparatus of claim 18, further comprising: (a) a radio frequency exciter, the radio frequency exciter generating a radio frequency voltage and current; (b) a matching network, the matching network interconnecting the radio frequency exciter and the antenna, thereby promoting the efficient transfer of radio frequency energy from the radio frequency exciter to the antenna.
Claim 25
Dependent Claim
56 words
The plasma processing apparatus of claim 19, wherein the antenna comprises a first current loop and a second current loop, the first and second current loops residing in a coplanar, spaced apart relationship wherein a line perpendicular to the planes of the first and second current loops defines a longitudinal axis of the plasma generation chamber.
Claim 26
Dependent Claim
23 words
The plasma processing apparatus of claim 20, wherein the generated magnetic field is parallel to the longitudinal axis of the plasma generation chamber.
Claim 27
Dependent Claim
25 words
The plasma processing apparatus of claim 21, wherein the substrate holder is supported within the process chamber in a state of relatively substantial electrical insulation.
Claim 28
Dependent Claim
27 words
The plasma processing apparatus of claim 22, wherein the substrate holder comprises: (a) A copper block; (b) Thermal control means, permitting temperature regulation of the copper block.
Claim 29
Dependent Claim
38 words
The plasma processing apparatus of claim 23, wherein the second fluid injector is formed as a porous element, thereby permitting a gas to be introduced within the element, the gas escaping from the element into the process chamber.
Claim 30
Dependent Claim
41 words
The plasma processing apparatus of claim 24, wherein the porous element is formed as a ring, the ring being constructed of tubing, the tubing being perforated so as to permit the gas to escape from the ring into the process chamber.
Claim 31
Dependent Claim
16 words
The plasma processing apparatus of claim 25, wherein the plasma generation chamber is a quartz cylinder.
Claim 32
Dependent Claim
36 words
The plasma processing apparatus of claim 17, further comprising a plurality of magnets, the magnets being arranged in a circumferential manner proximate to the process chamber, succeeding magnets having opposite orientations of north and south poles.
Claim 33
Dependent Claim
28 words
The plasma processing apparatus of claim 27, wherein the process chamber has a cross sectional area that is larger than a cross section of the plasma generation chamber.
Claim 34
Dependent Claim
17 words
The plasma processing apparatus of claim 28, wherein the process chamber is formed substantially of stainless steel.
Claim 35
Dependent Claim
20 words
The plasma process apparatus of claim 29, wherein the cross section of the process chamber is a regular geometric shape.
Claim 36
Dependent Claim
62 words
The plasma processing apparatus of claim 27, further comprising: (a) a plurality of plasma generation chambers, each plasma generation chamber being cooperatively connected to the processing chamber; (b) a plurality of antennas, each antenna being electromagnetically coupled to a plasma generation chamber; and (c) a plurality of magnetic field generators, each magnetic field generator being magnetically coupled to each plasma generation chamber.
Claim 37
Dependent Claim
104 words
The plasma processing apparatus of claim 20, further comprising (a) a plurality of plasma generation chambers, each plasma generation chamber being cooperatively connected to the process chamber, each plasma generation chamber being coaxial to the longitudinal axis of the plasma generation chamber; (b) a plurality of antennas, each antenna being electromagnetically coupled to a plasma generation chamber; (c) a plurality of magnetic field coils, the magnetic field coil being proximate to the process chamber; (d) a plurality of magnetic field generators, each magnetic field generator being magnetically coupled to each plasma generator; and (e) a plurality of substrate holders mounted within the process chamber.
Claim 38
Dependent Claim
35 words
The plasma processing apparatus of claim 30, further comprising a plurality of electrodes, the electrodes residing within the process chamber, the electrodes serving to extract an ion beam from the plasma within the process chamber.
Claim 39
Dependent Claim
148 words
A sputter deposition device according to claim 17, further comprising: (a) First magnetic field coils, the first magnetic field coils being magnetically coupled and proximate to the plasma generation chamber, the first magnetic field coils generating a magnetic field in a first direction; (b) Second magnetic field coils, the second magnetic field coils being magnetically coupled and proximate to the process chamber, the second magnetic field coils generating a magnetic field in a second direction, the second direction being substantially parallel to the first direction; (c) Third magnetic field coils, the third magnetic field coils being magnetically coupled and proximate to a target, the target residing within the process chamber, the magnetic field coils causing the plasma to conform to the target; and (d) A negative voltage power supply, the negative voltage power supply being electrically coupled to the target, the target thereby depositing material onto the substrate.
Claim 40
Dependent Claim
30 words
A sputter deposition device according to claim 34, further comprising a baffle, the baffle residing within the process chamber, the baffle permitting control of fluid injection into the process chamber.
Claim 41
Dependent Claim
49 words
A sputter deposition device according to claim 28, further comprising (a) at least one target; (b) biasing means, the biasing means applying a voltage to the target, thereby causing ions with the plasma to bombard the target and causing material from the target to be deposited on the substrate.
Claim 42
Dependent Claim
15 words
The sputter deposition device of claim 36, wherein the target is a magnetron sputter target.
Claim 43
Dependent Claim
42 words
The sputter deposition device of claim 36, wherein the substrate holder is formed as an aperture, thereby permitting the plasma to travel past the substrate holder enroute to the target. The plasma thereby bombarding the target and sputtering material onto the substrate.
Claim 44
Independent Claim
79 words
A method of radiating electromagnetic waves, comprising the steps of: (a) causing electromagnetic energy to flow in a first angular direction within a first substantially planar circular loop; (b) causing the electromagnetic energy to flow in a second, opposite angular direction within a second substantially planar parallel circular loop separated by a distance from the first substantially planar circular loop so as to satisfy the equation. [w/w c ● w p ²/C²k z ²]² = 1+ (3.83/k z ⁹)²
Claim 45
Independent Claim
79 words
A method of radiating electromagnetic waves, comprising the steps of: (a) causing electromagnetic energy to flow in a first angular direction within a first substantially planar circular loop; (b) causing the electromagnetic energy to flow in a second, opposite angular direction within a second substantially planar parallel circular loop separated by a distance from the first substantially planar circular loop so as to satisfy the equation. [w/w c ● w p ²/C²k z ²]² = 1+ (3.83/k z ⁹)²
Claim 46
Dependent Claim
34 words
The method of radiating electromagnetic waves of claim 39, further comprising the step of causing the electromagnetic energy flowing between the first current loop and the second current loop to follow a helical path.
Claim 47
Independent Claim
94 words
A method of plasma processing, comprising the steps of: (a) radiating electromagnetic energy into a plasma generation chamber; (b) injecting a first gas into the irradiated plasma generation chamber, thereby creating a plasma; (c) generating a variable magnetic field proximate the plasma generation chamber, the variable magnetic field permitting manipulation of the plasma; (d) transporting the plasma to an adjacent process chamber; (e) injecting a second gas into the process chamber; and (f) bombarding a substrate within the process chamber with the plasma, thereby permitting coating and etching of the substrate by the plasma.
Claim 48
Independent Claim
94 words
A method of plasma processing, comprising the steps of: (a) radiating electromagnetic energy into a plasma generation chamber; (b) injecting a first gas into the irradiated plasma generation chamber, thereby creating a plasma; (c) generating a variable magnetic field proximate the plasma generation chamber, the variable magnetic field permitting manipulation of the plasma; (d) transporting the plasma to an adjacent process chamber; (e) injecting a second gas into the process chamber; and (f) bombarding a substrate within the process chamber with the plasma, thereby permitting coating and etching of the substrate by the plasma.
Claim 49
Dependent Claim
51 words
The method of plasma processing of claim 41, further comprising the step of circumferentially placing a series of alternately oriented magnets proximate the process chamber, thereby creating a multicusp magnetic field within the process chamber and causing the plasma to diffuse within the process chamber along lines of the magnetic field.
Claim 50
Dependent Claim
33 words
The method of plasma processing of claim 42, further comprising the step of placing electrodes within the process chamber, thereby permitting extraction of an ion beam from the plasma within the process chamber.
Claim 51
Dependent Claim
118 words
The method of plasma processing of claim 41, further comprising the steps of: (a) a generating a first magnetic field in a first direction; the first magnetic field being magnetically coupled to the plasma generation chamber; (b) generating a second magnetic field in a second direction, the second magnetic field being magnetically coupled to the process chamber, the second direction being substantially parallel to the first direction; (c) generating a third magnetic field proximate a target, the target residing within the process chamber, the third magnetic field permitting the plasma to conform to the target; and (d) negatively biasing the target, thereby causing material to be ejected from the target so as to be deposited on the substrate.
References Cited (Backward Citations)
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