Patent US6720027B2 successfully refreshed from Google Patents.
Patent US5994775A successfully refreshed from Google Patents.
US5994775A
Expired / Lapsed
US
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Metal-filled via/contact opening with thin barrier layers in integrated circuit structure for fast response, and process for making same
Assignee: Bell Semiconductor LLC
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Filing: 1997-09-17
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Granted: 1999-11-30
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Expires: 2017-09-17
Abstract
Abstract The invention comprises an integrated circuit structure, and a process for making same, comprising a via/contact opening in a dielectric layer; a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of the via/contact opening to provide adherence of the filler material to the underlying and sidewall surface of the opening; a CVD barrier layer of tungsten, having a thickness of about 50 Angstroms, but not exceeding about 300 Angstroms, formed over the titanium nitride layer; and the remainder of the via/contact opening filled with a highly conductive metal selected from the group consisting of copper, CVD aluminum, and force-filled aluminum.
Inventors
- 👤 Joe W. Zhao
- 👤 Wilbur G. Catabay
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/425
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
116 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer over a semiconductor substrate; b) a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 300 Angstroms, formed over said titanium nitride layer; and d) a highly conductive metal, selected from the group consisting of copper and force-filled aluminum, filling the remainder of said via/contact opening.
Claim 2
Dependent Claim
116 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer over a semiconductor substrate; b) a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 300 Angstroms, formed over said titanium nitride layer; and d) a highly conductive metal, selected from the group consisting of copper and force-filled aluminum, filling the remainder of said via/contact opening.
Claim 3
Dependent Claim
25 words
The integrated circuit structure of claim 1 wherein the thickness of said CVD titanium nitride layer ranges from about 50 Angstroms to about 100 Angstroms.
Claim 4
Dependent Claim
24 words
The integrated circuit structure of claim 1 wherein the thickness of said CVD tungsten layer ranges from about 50 Angstroms to about 200 Angstroms.
Claim 5
Dependent Claim
28 words
The integrated circuit structure of claim 1 wherein the combined thicknesses of said CVD titanium nitride layer and said CVD tungsten layer is at least about 200 Angstroms.
Claim 6
Dependent Claim
28 words
The integrated circuit structure of claim 1 wherein the combined thicknesses of said CVD titanium nitride layer and said CVD tungsten layer is at least about 250 Angstroms.
Claim 7
Dependent Claim
28 words
The integrated circuit structure of claim 1 wherein the combined thicknesses of said CVD titanium nitride layer and said CVD tungsten layer does not exceed about 400 Angstroms.
Claim 8
Dependent Claim
28 words
The integrated circuit structure of claim 1 wherein the combined thicknesses of said CVD titanium nitride layer and said CVD tungsten layer does not exceed about 300 Angstroms.
Claim 9
Dependent Claim
15 words
The integrated circuit structure of claim 1 wherein said highly conductive metal comprises CVD copper.
Claim 10
Dependent Claim
17 words
The integrated circuit structure of claim 1 wherein said highly conductive metal comprises copper deposited by plating.
Claim 11
Dependent Claim
15 words
The integrated circuit structure of claim 1 wherein said highly conductive metal comprises force-filled aluminum.
Claim 12
Dependent Claim
15 words
The integrated circuit structure of claim 1 wherein said highly conductive metal comprises CVD aluminum.
Claim 13
Dependent Claim
27 words
The integrated circuit structure of claim 1 wherein said via/contact opening has a diameter no greater than 0.5 μm, and an aspect ratio of at least 2.5.
Claim 14
Dependent Claim
143 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer, said via/contact opening having a diameter no greater than 0.5 μm, and an aspect ratio of at least 2.5; b) a CVD layer of titanium nitride of at least about 50 Angstroms, but not exceeding about 100 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness ranging from about 50 Angstroms, but not exceeding about 200 Angstroms, formed over said titanium nitride layer, said combined thicknesses of said CVD titanium nitride and said CVD tungsten layers having a minimum thickness of at least 200 Angstrom; and d) a highly conductive metal, consisting essentially of copper, filling the remainder of said via/contact opening.
Claim 15
Dependent Claim
143 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer, said via/contact opening having a diameter no greater than 0.5 μm, and an aspect ratio of at least 2.5; b) a CVD layer of titanium nitride of at least about 50 Angstroms, but not exceeding about 100 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness ranging from about 50 Angstroms, but not exceeding about 200 Angstroms, formed over said titanium nitride layer, said combined thicknesses of said CVD titanium nitride and said CVD tungsten layers having a minimum thickness of at least 200 Angstrom; and d) a highly conductive metal, consisting essentially of copper, filling the remainder of said via/contact opening.
Claim 16
Dependent Claim
152 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer over a semiconductor substrate, said via/contact opening having a diameter no greater than 0.5 μm, and an aspect ratio of at least 2.5; b) a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 100 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, formed over said titanium nitride layer, said combined thicknesses of said CVD titanium nitride and said CVD tungsten layers having a minimum thickness of at least 200 Angstrom; and d) a highly conductive metal, consisting essentially of force-filled aluminum, filling the remainder of said via/contact opening.
Claim 17
Dependent Claim
152 words
An integrated circuit structure comprising: a) a via/contact opening in a dielectric layer over a semiconductor substrate, said via/contact opening having a diameter no greater than 0.5 μm, and an aspect ratio of at least 2.5; b) a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 100 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, formed over said titanium nitride layer, said combined thicknesses of said CVD titanium nitride and said CVD tungsten layers having a minimum thickness of at least 200 Angstrom; and d) a highly conductive metal, consisting essentially of force-filled aluminum, filling the remainder of said via/contact opening.
Claim 18
Dependent Claim
123 words
A process for making an integrated circuit structure comprising: a) forming a via/contact opening in a dielectric layer over a semiconductor substrate; b) forming a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) forming a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 300 Angstroms, over said titanium nitride layer; and d) forming a highly conductive metal selected from the group consisting of copper and force-filled aluminum in the remainder of said via/contact opening.
Claim 19
Dependent Claim
123 words
A process for making an integrated circuit structure comprising: a) forming a via/contact opening in a dielectric layer over a semiconductor substrate; b) forming a CVD layer of titanium nitride having a thickness of at least about 50 Angstroms, but not exceeding about 200 Angstroms, on the sidewall and bottom surfaces of said via/contact opening to provide adherence of filler material to the underlying and sidewall surfaces of said via/contact opening; c) forming a CVD barrier layer of tungsten, having a thickness of at least about 50 Angstroms, but not exceeding about 300 Angstroms, over said titanium nitride layer; and d) forming a highly conductive metal selected from the group consisting of copper and force-filled aluminum in the remainder of said via/contact opening.
References Cited (Backward Citations)
US5371041A
Cited
US4994410A
Cited
US4822753A
Cited
US5149672A
Cited
US5094981A
Cited
US5238872A
Cited
US5380678A
Cited
US5356835A
Cited
US5250467A
Cited
US5480836A
Cited
US5254498A
Cited
US5399526A
Cited
US5462895A
Cited
US5290588A
Cited
US5403779A
Cited
US5407861A
Cited
US5486492A
Cited
US5397742A
Cited
US5427666A
Cited
US5391517A
Cited
US5413669A
Cited
US5457069A
Cited
US5714418A
Cited
US5677238A
Cited
US5677237A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-11-29 | 2003-05-31 | 2003-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-29 | 2007-05-31 | 2007-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-29 | 2011-05-31 | 2011-11-30 | $7700.00 | Window Closed / Lapsed |