US5990491A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Active matrix device utilizing light shielding means for thin film transistors
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1997-12-10
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Granted: 1999-11-23
•
Expires: 2017-12-10
Abstract
Abstract A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
Inventors
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:47
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136227; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/00; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
68 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a light shielding layer provided on said transparent organic resin film; an interlayer insulating film provided over said light shielding layer; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 2
Dependent Claim
68 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a light shielding layer provided on said transparent organic resin film; an interlayer insulating film provided over said light shielding layer; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 3
Dependent Claim
18 words
The device of claim 1 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 4
Dependent Claim
17 words
The device of claim 1 wherein said pixel electrode is directly connected with said thin film transistor.
Claim 5
Dependent Claim
18 words
The device of claim 1 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 6
Dependent Claim
99 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided over said interlayer insulating film and electrically connected with said switching element.
Claim 7
Dependent Claim
99 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided over said interlayer insulating film and electrically connected with said switching element.
Claim 8
Dependent Claim
18 words
The device of claim 5 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 9
Dependent Claim
100 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided directly on said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 10
Dependent Claim
100 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided directly on said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 11
Dependent Claim
18 words
The device of claim 7 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 12
Dependent Claim
104 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.
Claim 13
Dependent Claim
104 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.
Claim 14
Dependent Claim
18 words
The device of claim 9 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 15
Dependent Claim
99 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 16
Dependent Claim
99 words
An active matrix device comprising: a substrate; a switching element comprising a thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.
Claim 17
Dependent Claim
18 words
The device of claim 11 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 18
Dependent Claim
67 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a light shielding layer provided on said transparent organic resin film; an interlayer insulating film provided over said light shielding layer; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 19
Dependent Claim
67 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a light shielding layer provided on said transparent organic resin film; an interlayer insulating film provided over said light shielding layer; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 20
Dependent Claim
18 words
The device of claim 13 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 21
Dependent Claim
98 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided over said interlayer insulating film and electrically connected with said thin film transistor.
Claim 22
Dependent Claim
98 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided over said interlayer insulating film and electrically connected with said thin film transistor.
Claim 23
Dependent Claim
18 words
The device of claim 15 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 24
Dependent Claim
99 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided directly on said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 25
Dependent Claim
99 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided directly on said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 26
Dependent Claim
18 words
The device of claim 17 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 27
Dependent Claim
102 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.
Claim 28
Dependent Claim
102 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.
Claim 29
Dependent Claim
18 words
The device of claim 19 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
Claim 30
Dependent Claim
98 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 31
Dependent Claim
98 words
An active matrix device comprising: a substrate; at least one thin film transistor provided over said substrate; a transparent organic resin film provided over said thin film transistor; a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor; an interlayer insulating film provided over said light shielding part; and a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.
Claim 32
Dependent Claim
18 words
The device of claim 21 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-11-22 | 2003-05-24 | 2003-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-11-22 | 2007-05-24 | 2007-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-11-22 | 2011-05-24 | 2011-11-23 | $7700.00 | Window Closed / Lapsed |