US5650637A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Active matrix assembly
Assignee: Seiko Epson Corp
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Filing: 1995-03-20
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Granted: 1997-07-22
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Expires: 2015-03-20
Abstract
Abstract Improved thin film transistors resistant to photo-induced current and having improved electrical contact between electrodes and the source or drain regions are provided. The thin film transistors formed in accordance with the invention are particularly well suited for use in an active matrix substrate for a liquid crystal display panel. The liquid crystal display panels include an additional insulating layer formed between crossing orthogonal source lines and gate lines to provide a higher breakdown voltage between the source lines and gate lines than at the gate insulating layer of the thin film transistors.
Inventors
- 👤 Toshimoto Kodaira
- 👤 Hiroyuki Oshima
- 👤 Toshihiko Mano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:51
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G02F1/136; G02F1/1362; G02F1/136209; G02F1/136213; G02F1/1368; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D30/6729; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D86/00; H10D86/40; H10D86/451; H10D86/481; H10D86/60; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W70/00; H10W70/60; H10W70/611; H10W70/62; H10W70/65; G02F1/1335; G02F1/133509; G02F1/133512; G02F1/136227; G02F2202/00; G02F2202/10; G02F2202/104
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
158 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate; a source region and a drain region disposed over the substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; an insulating layer in contact with the gate electrode; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region to reduce a channel OFF current of each of the plurality of field effect transistors, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 2
Dependent Claim
158 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate; a source region and a drain region disposed over the substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; an insulating layer in contact with the gate electrode; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region to reduce a channel OFF current of each of the plurality of field effect transistors, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 3
Dependent Claim
25 words
The active matrix assembly of claim 1, wherein the semiconductor layer is selected from a group consisting of polycrystalline silicon, amorphous silicon and cadmium selenide.
Claim 4
Dependent Claim
16 words
The active matrix assembly of claim 1, wherein the substrate is one of glass and quartz.
Claim 5
Dependent Claim
13 words
The active matrix assembly of claim 1, wherein the non-transparent electrode is metal.
Claim 6
Dependent Claim
13 words
The active matrix assembly of claim 1, wherein the non-transparent electrode is aluminum.
Claim 7
Dependent Claim
40 words
The active matrix assembly of claim 1, wherein the non-transparent electrode reduces a leakage current between the source and the drain regions caused by light incident on the channel region when the field effect transistor is in an OFF condition.
Claim 8
Dependent Claim
17 words
The active matrix assembly of claim 1, wherein the gate insulating film is a thermal oxide layer.
Claim 9
Dependent Claim
146 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; an insulating layer in contact with the gate electrode; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 10
Dependent Claim
146 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; an insulating layer in contact with the gate electrode; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 11
Dependent Claim
149 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate; a source region and a drain region disposed over the substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region to reduce a channel OFF current of each of the plurality of field effect transistors, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 12
Dependent Claim
149 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region comprising a semiconductor layer, the semiconductor layer disposed over a substrate; a source region and a drain region disposed over the substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region to reduce a channel OFF current of each of the plurality of field effect transistors, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 13
Dependent Claim
137 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 14
Dependent Claim
137 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors arranged in a plurality of picture elements, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; a transparent pixel electrode electrically connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region, wherein the non-transparent electrode does not overlap the pixel electrode.
Claim 15
Dependent Claim
109 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a transparent pixel electrode connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region.
Claim 16
Dependent Claim
109 words
An active matrix assembly comprising: a transmissive electro-optical device including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, source and drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a transparent pixel electrode connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region.
Claim 17
Dependent Claim
146 words
A projection type color display device including a light source, at least one light valve, and at least one projecting optical system for projecting a color image, the at least one light valve including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, the source and the drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; and a transparent pixel electrode connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region.
Claim 18
Dependent Claim
146 words
A projection type color display device including a light source, at least one light valve, and at least one projecting optical system for projecting a color image, the at least one light valve including a plurality of liquid crystal cells, data signals being supplied to the plurality of liquid crystal cells through a plurality of field effect transistors, each of the plurality of field effect transistors comprising: a channel region, a source region and a drain region, each of the channel, the source and the drain regions comprising a non-monocrystalline silicon layer on an insulating transparent substrate; a gate insulating film in contact with at least the channel region; a gate electrode in contact with the gate insulating film; and a transparent pixel electrode connected to the drain region; and a non-transparent electrode connected to the source region, the non-transparent electrode completely overlapping the channel region.
References Cited (Backward Citations)
US3840695A
Cited
US4024562A
Cited
JPS5420692A
Cited
US4332075A
Cited
US4239346A
Cited
US4385292A
Cited
US4291322A
Cited
US4404578A
Cited
US4431271A
Cited
GB2067353A
Cited
GB2066545A
Cited
GB2074788A
Cited
US4582395A
Cited
US4336295A
Cited
US4543573A
Cited
US4455568A
Cited
JPS58125087A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-07-21 | 2001-01-20 | 2001-07-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-21 | 2005-01-20 | 2005-07-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-07-21 | 2009-01-20 | 2009-07-22 | $7700.00 | Window Closed / Lapsed |