US4332075A
Expired / Lapsed
US
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Method of producing thin film transistor array
Assignee: Panasonic Holdings Corp
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Filing: 1979-05-22
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Granted: 1982-06-01
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Expires: 1999-05-22
Abstract
Abstract A method of producing thin film transistor arrays and having at least 7 steps including: a first step of forming a first electrode layer uniformly over an insulating substrate; a second step of forming electrodes, such as drain and source electrodes and bus bars with a desired pattern by photoetching the first electrode; a third step of forming a uniform semiconducting layer on the surface of the substrate having the patterned electrodes; a fourth step of successively forming a uniform insulating layer over the uniformly deposited semiconducting layer while keeping the array in a vacuum; a fifth step of photoetching the uniformly deposited insulating layer into a desired pattern; a sixth step of photoetching the uniform semiconducting layer into the same pattern as the patterned insulating layer; a seventh step of forming a second electrode uniformly over the surface having the patterned electrodes and insulating layer; and an eighth step of photoetching the uniformly deposited second electrode into a desired pattern.
Inventors
- 👤 Isao Ota
- 👤 Haruhiro Shirazawa
- 👤 Toshio Tatsumichi
- 👤 Hiroshi Kawarada
- 👤 Tetsuro Ohtsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 08:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/675; H10D86/00; H10D86/01; H10D86/021; H10D86/40; H10D86/421; H10D86/451; H10D86/60; Y; Y10; Y10S; Y10S438/00; Y10S438/98
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
114 words
A method producing a thin film transistor comprising: uniformly forming a first electrode layer over an insulating substrate; forming electrodes for at least one of source, drain, and interconnecting lines with desired patterns by photoetching said first electrode layer; forming a uniform semiconducting layer on a surface of the substrate having said patterned electrodes; successively forming a uniform insulating layer over said uniform semiconducting layer; photoetching said uniform insulating layer into a desired pattern; photoetching said uniform semiconducting layer into the same pattern as said patterned insulating layer; forming a second electrode uniformly over the surface having said patterned electrode and insulating layer; and photoetching said uniformly deposited second electrode into a desired pattern.
Claim 2
Independent Claim
114 words
A method producing a thin film transistor comprising: uniformly forming a first electrode layer over an insulating substrate; forming electrodes for at least one of source, drain, and interconnecting lines with desired patterns by photoetching said first electrode layer; forming a uniform semiconducting layer on a surface of the substrate having said patterned electrodes; successively forming a uniform insulating layer over said uniform semiconducting layer; photoetching said uniform insulating layer into a desired pattern; photoetching said uniform semiconducting layer into the same pattern as said patterned insulating layer; forming a second electrode uniformly over the surface having said patterned electrode and insulating layer; and photoetching said uniformly deposited second electrode into a desired pattern.
Claim 3
Dependent Claim
38 words
A method of producing a thin film transistor as claimed in claim 1, wherein said first electrode is made of a conductive electrode material selected from the group consisting of indium oxide, tin oxide and indium tin oxide.
Claim 4
Dependent Claim
82 words
A method of producing a thin film transistor as claimed in claim 1, comprising a further step, effected between said electrode forming step and said semiconducting layer forming step, of forming an insulating layer with a given shape and substantially the same thickness as said first electrode, at least on the portion of the substrate where said first electrode layer has been partially removed, and wherein the semiconducting layer and insulating layer having given shapes are to be provided in successive steps.
Claim 5
Dependent Claim
44 words
A method of producing a thin film transistor as claimed in claim 1, comprising a further step, effected between said electrode forming step and said semiconducting layer forming step, of forming an insulating layer by means of either a vacuum evaporation or sputtering method.
Claim 6
Dependent Claim
45 words
A method of producing a thin film transistor as claimed in claim 1, comprising a further step, effected between said semiconducting layer photoetching step and said second electrode forming step, of forming an insulating layer by means of either a vacuum evaporation or sputtering method.
Claim 7
Dependent Claim
25 words
A method of producing thin film transistor as claimed in claim 4 or 5, wherein said insulating layer is made of a photosensitive organic polymer.
Claim 8
Dependent Claim
23 words
A method of producing a thin film transistor as claimed in claim 1, wherein said semiconducting layer material is made of cadmium selenide.
Claim 9
Dependent Claim
35 words
A method of producing a thin film transistor as claimed in claim 7, wherein an etching solution used for photoetching said semiconducting layer material is an aqueous solution of from 0.1 to 0.7wt.% of bromine.
Claim 10
Dependent Claim
26 words
A method of producing a thin film transistor as claimed in claim 1, 3, 4 or 5, wherein said insulating layer is made of aluminum oxide.
Claim 11
Dependent Claim
27 words
A method of producing a thin film transistor as claimed in claim 9, wherein an etching solution used for photoetching said insulating layer is hot phosphoric acid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-05-31 | 1985-11-30 | 1986-06-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-05-31 | 1989-11-30 | 1990-06-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-05-31 | 1993-11-30 | 1994-06-01 | $7700.00 | Window Closed / Lapsed |