US5604380A
Expired / Lapsed
US
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Semiconductor device having a multilayer interconnection structure
Assignee: Mitsubishi Electric Corp
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Filing: 1995-03-10
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Granted: 1997-02-18
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Expires: 2015-03-10
Abstract
Abstract In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO)2(R2Si2O3)nH2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.
Inventors
- 👤 Hiroyuki Nishimura
- 👤 Hiroshi Adachi
- 👤 Etsushi Adachi
- 👤 Shigeyuki Yamamoto
- 👤 Shintaro Minami
- 👤 Shigeru Harada
- 👤 Toru Tajima
- 👤 Kimio Hagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; B; B32; B32B; B32B27/00; B32B27/06; B32B27/08; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6548; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/074; H10W20/077; H10W20/093; H10W20/096; H10W20/40; H10W20/45; H10W20/48; H10P14/63; H10P14/6326; H10P14/6342
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
194 words
A semiconductor device comprising: a first wiring layer on which a given wiring pattern is formed; an interlayer insulating layer formed on the first wiring layer so as to have a contact hole and absorb irregularity due to the first wiring layer; and a second wiring layer formed by providing a given pattern on the interlayer insulating layer: said second wiring layer and said first wiring layer being connected through the contact hole provided in the interlayer film at a predetermined position; wherein the interlayer insulating layer has a flattening film component which is a cured resin film made of a resin material containing one or more silicone ladder polymers of which 20 to 60% by wt. is hydrogen silsesquioxane, so as to adjust the carbon atom content of said flattening film for setting an etching rate on production to a predetermined extent, the silicone ladder polymers having the formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2 wherein n denotes an integer which defines the weight average molecular weight of the silicone ladder polymer to within the range of 2,000 to 100,000; and R represents one or more of a hydrogen atom, lower alkyl or phenyl.
Claim 2
Dependent Claim
194 words
A semiconductor device comprising: a first wiring layer on which a given wiring pattern is formed; an interlayer insulating layer formed on the first wiring layer so as to have a contact hole and absorb irregularity due to the first wiring layer; and a second wiring layer formed by providing a given pattern on the interlayer insulating layer: said second wiring layer and said first wiring layer being connected through the contact hole provided in the interlayer film at a predetermined position; wherein the interlayer insulating layer has a flattening film component which is a cured resin film made of a resin material containing one or more silicone ladder polymers of which 20 to 60% by wt. is hydrogen silsesquioxane, so as to adjust the carbon atom content of said flattening film for setting an etching rate on production to a predetermined extent, the silicone ladder polymers having the formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2 wherein n denotes an integer which defines the weight average molecular weight of the silicone ladder polymer to within the range of 2,000 to 100,000; and R represents one or more of a hydrogen atom, lower alkyl or phenyl.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, wherein the flattening film contains a silicone polymer containing hydroxy groups in side chains.
Claim 4
Dependent Claim
26 words
A semiconductor device according to claim 2, wherein the silicone polymer is contained in the resin material in the range of 5 to 30 weight percent.
Claim 5
Dependent Claim
24 words
A semiconductor device according to claim 1, wherein the resin material contains a silane coupling agent in the range of 150 to 100,000 ppm.
Claim 6
Dependent Claim
24 words
A semiconductor device according to claim 4, wherein the resin material contains a silane coupling agent in the range of 3,000 to 100,000 ppm.
Claim 7
Dependent Claim
22 words
The semiconductor device according to claim 1, wherein the "OH" group is absent from the side chains of said silicone ladder copolymer.
Claim 8
Dependent Claim
47 words
The semiconductor device according to claim 1, wherein said silicone ladder polymer is a mixture of silicone ladder polymers one of which has a weight average molecular weight of at least 30,000, and the other silicone ladder polymer has a weight average molecular weight less than 30,000.
Claim 9
Dependent Claim
34 words
The semiconductor device according to claim 7, wherein the amount of the low molecular weight silicone ladder polymer is at least 20 wt % with respect to the high molecular weight silicone ladder polymer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |