Improved electronic device having multilayer wiring structure

Claim 2

An electronic device having a multilayer wiring structure which comprises (a) a substrate having formed thereon a first metal layer of wiring, and (b) an interlayer insulation layer comprised of a cured coating of a ladder-type silsesquioxane polymer, formed on the substrate and having formed thereon a second metal layer of wiring.

Claim 3

An electronic device having a multilayer wiring structure which comprises a layer for protecting a metal wiring layer or layers formed in the multilayer wiring structure; said protecting layer being comprised of a cured coating of a ladder-type silsesquioxane polymer.

Claim 4

An electronic device having a multilayer wiring structure which comprises a layer for protecting a metal wiring layer or layers formed in the multilayer wiring structure; said protecting layer being comprised of a cured coating of a ladder-type silsesquioxane polymer.

Claim 5

The electronic device according to claim 1 or 2, wherein the ladder-type silsesquioxane polymer has a chemical structure represented by the formula: wherein each R 2 is independently hydrogen, methyl, ethyl or propyl, each R 1 is independently methyl, ethyl, phenyl, chlorophenyl or bromophenyl, and part of R 1 s may be replaced by hydroxyl, methoxy or ethoxy, and n is an integer sufficient to provide a molecular weight of from about 1,000 to about 1,000,000.

Claim 6

The electronic device according to claim 3, wherein at least one half of the side chains R 1 are methyl groups and the remainder of the side chains R are selected from ethyl, phenyl, chlorophenyl, hydroxyl, methoxy and ethoxy groups.

Claim 7

The electronic device according to claim 3, wherein all of the side chains R 1 are methyl groups, or at least one half of the side chains R 1 are methyl groups and the remainder of the side chains R 1 are phenyl groups.

Claim 8

The electronic device according to claim 3, wherein n in the formula (I) is an integer sufficient to provide a molecular weight of from about 1,500 to about 200,000.

Claim 9

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer is a cured coating of a mixture comprising at least 30% by weight of the ladder-type silsesquioxane polymer and not larger than 70% by weight of at least one compound selected from the group consisting of: (i) silanol compounds represented by the following formula (II) or (IV): wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (ii) titanol compounds represented by the following formula: wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms.

Claim 10

The electronic device according to claim 7, wherein said mixture comprises 40 to 70% by weight of the ladder-type silsesquioxane polymer and 30% to 60% by weight of said compound selected from silanol compounds of the formula (II) or (IV) and titanol compounds of the formula (III).

Claim 11

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer is a cured coating of a copolymer comprised of at least 30% by weight of units derived from the ladder-type silsesquioxane polymer and not larger than 70% by weight of units drived from at least one compound selected from the group consisting of: (i) silanol compounds represented by the following formula (II) or (IV): wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (ii) titanol compounds represented by the following formula: wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms.

Claim 12

The electronic device according to claim 9, wherein said copolymer is comprised of at least 80% by weight of the ladder-type silsesquioxane polymer units and not larger than 20% by weight of the silanol or titanol compound units.

Claim 13

The electronic device according to claim 1 or 2, wherein said interlayer insulation layer or protecting layer is a cured coating of a copolymer mixture comprising: (i) a copolymer comprised of at least 80% by weight of units derived from the ladder-type silsesquioxane polymer and not larger than 20% by weight of units derived from at least one compound selected from the group consisting of:. (a) silanol compounds represented by the following formula (II) or (IV): wherein each R 3 is independently hydrogen or an alkyl group having 1 to 3 carbon atoms and R 5 is an organic residue; and (b) titanol compounds represented by the following formula: wherein each R 4 is independently an alkyl group having 3 to 6 carbon atoms; and, (ii) at least one compound of the silanol and . titanol compounds of the formulae (II), (IV) and (III), the amount of the compound (ii) selected from the silanol and titanol compounds being such that the total amount of the compound (ii) to be mixed with the copolymer (i) and the silanol or titanol compound contained in the copolymer (i) is not larger than 70% by weight based on the weight of the copolymer mixture.

Claim 14

The electronic device according to claim 7, wherein R5in the formula (IV) is an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms or a substituted or unsubstituted phenyl group.

Claim 15

The electronic device according to claim 7, wherein said electronic device is a semiconductor device and said interlayer insulation layer contains 100 to 50,000 ppm of phosphorus.

Claim 16

The electronic device according to claim 1, wherein the electronic device is a semiconductor device which comprises (a) a substrate having built-in circuit elements having predetermined portions exposed, the , substrate further having a first metal wiring layer of a predetermined pattern formed on the side of the circuit elements of the substrate, and (b) an interlayer insulation layer comprised of a cured coating of a ladder-type silsesquioxane polymer, said insulation layer having windows formed on the first metal wiring layer and further having a second metal wiring layer of a predetermined pattern formed on the insulation layer and electrically connected to the first metal wiring layer through the windows of the insulation layer.

Claim 17

The electronic device according to claim 1 wherein at least one of the first and second metal wiring layers is a magnetic material layer, and one of the following (i) and (ii) is formed between the magnetic material layer and the interlayer insulation layer: (i) a layer of at least one inorganic oxide selected from the group consisting of SiO 2 , Aℓ 2 O 3 , Cr 2 0 3 and TiO 2 and (ii) said inorganic oxide layer plus a layer of tantalum or titanium.

Claim 18

The electronic device according to claim 1, wherein the electronic device is a magnetic bubble device which comprises (a) a substrate having formed thereon a first metal wiring layer of a predetermined pattern, and (b) an insulation layer comprised of a cured coating of a ladder-type silsesquioxane polymer and having a permalloy layer of a predetermined pattern formed on the insulation layer.

Claim 19

The electronic device according to claim 1, wherein the electronic device is a magnetic head which comprises two soft magnetic material layers, a conductor coil and a plurality of insulation layers; at least one of the insulation layers is comprised of a cured coating of a ladder-type silsesquioxane polymer.

Claim 20

The electronic device according to any one of claims 1, 14, 16 and 17 wherein an adhesion layer comprised of at least one oxide selected from the group consisting of SiO 2 , Aℓ 2 O 3 , Cr 2 O 3 and Ti02 is formed between the insulation layer comprised of the cured ladder-type silsesquioxane polymer coating and the second metal wiring or permalloy layer.

Claim 21

The electronic device according to claim 1, wherein a layer of an inorganic oxide is formed on and/or around at least one of the first and second metal wiring layers by vapor phase growth deposition, and wedge-shaped gaps formed between said metal wiring layer and the inorganic oxide layer are filled with a ladder-type silsesquioxane polymer.

Claim 22

The electronic device according to claim 1 or 2, wherein a layer of an inorganic oxide selected from the group consisting of SiO 2 , Aℓ 2 O 3 , Cr 2 O 3 and TiO 2 is formed as the uppermost layer of the multilayer wiring structure.