US5717224A
Expired / Lapsed
US
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Semiconductor device having an insulated gate field effect thin film transistor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1996-09-06
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Granted: 1998-02-10
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Expires: 2016-09-06
Abstract
Abstract A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.
Inventors
- 👤 Hongyong Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:47
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136227; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6723; H10D86/00; H10D86/40; H10D86/441; H10D86/60
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
151 words
A semiconductor device formed on an insulating substrate comprising: a semiconductor region having a source, a drain and a channel located between said source and said drain; a gate electrode provided adjacent to said channel with a gate insulating layer therebetween; a first interlayer insulating film comprising an organic resin film or a multilayer of a silicon oxide layer and an organic resin layer provided over said gate electrode; a source electrode connected to said source and provided on said first interlayer insulating film, said source electrode functioning to shield at least said channel from external light; and a second interlayer insulating film formed on said first interlayer insulating film wherein a portion of said source electrode is interposed between said first and second interlayer insulating film, wherein said second interlayer insulating film comprises a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride.
Claim 2
Dependent Claim
151 words
A semiconductor device formed on an insulating substrate comprising: a semiconductor region having a source, a drain and a channel located between said source and said drain; a gate electrode provided adjacent to said channel with a gate insulating layer therebetween; a first interlayer insulating film comprising an organic resin film or a multilayer of a silicon oxide layer and an organic resin layer provided over said gate electrode; a source electrode connected to said source and provided on said first interlayer insulating film, said source electrode functioning to shield at least said channel from external light; and a second interlayer insulating film formed on said first interlayer insulating film wherein a portion of said source electrode is interposed between said first and second interlayer insulating film, wherein said second interlayer insulating film comprises a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride.
Claim 3
Dependent Claim
27 words
A semiconductor device according to claim 1 wherein said gate electrode is provided over the channel of said semiconductor region with a gate insulating film interposed therebetween.
Claim 4
Dependent Claim
154 words
A semiconductor device formed on an insulating substrate comprising: a semiconductor region having a source, a drain and a channel located between said source and said drain; a gate electrode provided adjacent to said channel with a gate insulating layer therebetween; a first interlayer insulating film provided over said gate electrode, said first interlayer insulating film comprising an organic resin layer or a multi-layer of a silicon oxide layer and an organic resin layer; light shielding conductive film provided on said first interlayer insulating film for shielding at least said channel region from external light; a second interlayer insulating film provided on said first interlayer insulating film with said light shielding conducting film interposed therebetween, said second interlayer insulating film comprising a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride; and a pixel electrode connected to said drain and provided on said second interlayer insulating film.
Claim 5
Dependent Claim
154 words
A semiconductor device formed on an insulating substrate comprising: a semiconductor region having a source, a drain and a channel located between said source and said drain; a gate electrode provided adjacent to said channel with a gate insulating layer therebetween; a first interlayer insulating film provided over said gate electrode, said first interlayer insulating film comprising an organic resin layer or a multi-layer of a silicon oxide layer and an organic resin layer; light shielding conductive film provided on said first interlayer insulating film for shielding at least said channel region from external light; a second interlayer insulating film provided on said first interlayer insulating film with said light shielding conducting film interposed therebetween, said second interlayer insulating film comprising a material selected from the group consisting of silicon nitride, aluminum nitride, aluminum oxide and aluminum nitride; and a pixel electrode connected to said drain and provided on said second interlayer insulating film.
Claim 6
Dependent Claim
15 words
The device of claim 3 further comprising a second light shielding film below said channel.
Claim 7
Dependent Claim
13 words
The device of claim 4 wherein said second light shielding film is grounded.
Claim 8
Dependent Claim
27 words
A semiconductor device according to claim 3 wherein said gate electrode is provided over the channel of said semiconductor region with a gate insulating film interposed therebetween.
Claim 9
Dependent Claim
33 words
A semiconductor device according to claim 3 wherein said pixel electrode is connected to the drain of the semiconductor region through a contact hole opened through said first and second interlayer insulating films.
Claim 10
Dependent Claim
94 words
A thin film transistor provided on a substrate comprising: a source and a drain; a source line connected to one of said source and said drain; a pixel electrode connected to the other of said source and said drain; a first interlayer provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer; and a second interlayer provided on said first interlayer and comprising a material selected from the group consisting of silicon nitride, aluminum oxide and aluminum nitride.
Claim 11
Dependent Claim
94 words
A thin film transistor provided on a substrate comprising: a source and a drain; a source line connected to one of said source and said drain; a pixel electrode connected to the other of said source and said drain; a first interlayer provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer; and a second interlayer provided on said first interlayer and comprising a material selected from the group consisting of silicon nitride, aluminum oxide and aluminum nitride.
Claim 12
Dependent Claim
21 words
The transistor of claim 8 further comprising a gate electrode provided on a silicon layer comprising said source and said drain.
Claim 13
Dependent Claim
90 words
A thin film transistor provided on a substrate comprising: a source and a drain; a source line connected to one of said source and said drain; a pixel electrode; a conductor extending from said pixel electrode and connected to the other of said source and said drain; a first interlayer having a planarized surface and provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer; and a second interlayer provided on said first interlayer.
Claim 14
Dependent Claim
90 words
A thin film transistor provided on a substrate comprising: a source and a drain; a source line connected to one of said source and said drain; a pixel electrode; a conductor extending from said pixel electrode and connected to the other of said source and said drain; a first interlayer having a planarized surface and provided over said source and said drain and comprising an organic resin layer or a multilayer of a silicon dioxide layer and an organic resin layer; and a second interlayer provided on said first interlayer.
Claim 15
Dependent Claim
21 words
The transistor of claim 10 further comprising a gate electrode provided on a silicon layer comprising said source and said drain.
Claim 16
Dependent Claim
16 words
The transistor of claim 10 wherein said second interlayer comprises a material different from silicon oxide.
References Cited (Backward Citations)
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