Patent US5907783A successfully refreshed from Google Patents.
US5907783A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating silicon-on-insulator substrate
Assignee: SK Hynix Inc
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Filing: 1996-12-26
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Granted: 1999-05-25
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Expires: 2016-12-26
Abstract
Abstract A method of fabricating a SOI substrate is disclosed, which includes the steps of: forming trenches in the Si substrate; forming an oxidation preventing film over the Si substrate and at the side-walls of the trenches; forming grooves at the bottoms of trenches by etching the Si substrate using the oxidation preventing film as a mask; carrying out an oxidation using to form an oxide film and a Si device layer isolated by the oxide film; removing the oxidation preventing film; and carrying out a planarization to form the silicon-on-insulator substrate having a planar surface.
Inventors
- 👤 Jin-Hyoung Kim
- 👤 Kyoon-Hyoung Kim
- 👤 Han-Sub Yoon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:17
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/01
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
97 words
A method of fabricating a silicon-on-insulator substrate, comprising the steps of: forming trenches in a Si substrate, said trenches each having a side-wall and a bottom; forming an oxidation preventing film over said Si substrate and the side-walls of said trenches; forming grooves at the bottoms of said trenches by etching said Si substrate using said oxidation preventing film as a mask; oxidizing said grooves to form an oxide film and a Si device layer completely dielectrically isolated by said oxide film; and planarizing by etchback, thereby removing the oxidation preventing film and exposing the oxide film.
Claim 2
Independent Claim
97 words
A method of fabricating a silicon-on-insulator substrate, comprising the steps of: forming trenches in a Si substrate, said trenches each having a side-wall and a bottom; forming an oxidation preventing film over said Si substrate and the side-walls of said trenches; forming grooves at the bottoms of said trenches by etching said Si substrate using said oxidation preventing film as a mask; oxidizing said grooves to form an oxide film and a Si device layer completely dielectrically isolated by said oxide film; and planarizing by etchback, thereby removing the oxidation preventing film and exposing the oxide film.
Claim 3
Dependent Claim
15 words
The method as claimed in claim 1, wherein said oxidation preventing film is silicon nitride.
Claim 4
Dependent Claim
65 words
The method as claimed in claim 1, wherein said step for forming said oxidation preventing film includes the step for: depositing a silicon nitride over said Si substrate including said trenches; forming a photoresist pattern to expose said silicon nitride over the bottom of said trenches; patterning said silicon nitride using said photoresist pattern to form said oxidation preventing film; and removing said photoresist pattern.
Claim 5
Dependent Claim
40 words
The method as claimed in claim 3, wherein said step for forming said oxidation preventing film further includes a step for forming a pad oxide over said Si substrate including said trenches, before the step for depositing said silicon nitride.
Claim 6
Dependent Claim
28 words
The method as claimed in claim 1, further comprising a step for forming a polysilicon layer at said grooves between said groove formation step and said oxidation step.
Claim 7
Dependent Claim
30 words
The method as claimed in claim 1, further comprising a step for implanting oxygen ions into the Si substrate underlying grooves between said groove formation step and said oxidation step.
Claim 8
Dependent Claim
19 words
The method as claimed in claim 1, wherein said planarization step is carried out by chemical and mechanical polishing.
Claim 9
Dependent Claim
19 words
The method as claimed in claim 1, wherein the step of forming grooves is carried out by isotropic etching.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-05-24 | 2002-11-23 | 2003-05-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-05-24 | 2006-11-23 | 2007-05-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-05-24 | 2010-11-23 | 2011-05-25 | $7700.00 | Window Closed / Lapsed |