Method and apparatus for filling a gap between spaced layers of a semiconductor

Claim 1

A method of making a semiconductor device assembly, said method comprising the steps of: providing an enclosed chamber; providing a source of fluid under pressure; providing a semiconductor device having a first surface and a second active interior surface having electrical interconnection structure formed thereon extending outwardly therefrom; providing a substrate having a metallized surface pattern of electrical circuits for contact with said electrical interconnection structure of said semiconductor device, said substrate having an exterior surface spaced from said metallized surface pattern of electrical circuits and a plurality of thermal vias extending through said metallized surface pattern of electrical circuits to said exterior surface; placing the semiconductor device in the chamber; placing the substrate in the chamber; positioning said semiconductor device proximate said substrate with said interconnection structure in contact with a portion of the metallized surface pattern of electrical circuits of said substrate thereby forming a gap between said semiconductor device and said substrate, said gap having a perimeter; connecting a portion of said electrical interconnection structure of said semiconductor device to a portion of the metallized surface pattern of electrical circuits of said substrate thereby forming an electrical circuit; providing a source of fill material in the chamber; placing fill material proximate the perimeter of said gap; pressurizing the chamber with the fluid under pressure; providing a source of vacuum on an opposite side of said substrate from the chamber; and positioning the exterior surface of said substrate relative to said source of vacuum and positioning the perimeter of said gap relative to said source of fluid under pressure for said vacuum to draw through at least one of said thermal vias and with said fluid under pressure and said vacuum urging said fill material from said perimeter into said gap.

Claim 2

A method of making a semiconductor device assembly, said method comprising the steps of: providing an enclosed chamber; providing a source of fluid under pressure; providing a semiconductor device having a first surface and a second active interior surface having electrical interconnection structure formed thereon extending outwardly therefrom; providing a substrate having a metallized surface pattern of electrical circuits for contact with said electrical interconnection structure of said semiconductor device, said substrate having an exterior surface spaced from said metallized surface pattern of electrical circuits and a plurality of thermal vias extending through said metallized surface pattern of electrical circuits to said exterior surface; placing the semiconductor device in the chamber; placing the substrate in the chamber; positioning said semiconductor device proximate said substrate with said interconnection structure in contact with a portion of the metallized surface pattern of electrical circuits of said substrate thereby forming a gap between said semiconductor device and said substrate, said gap having a perimeter; connecting a portion of said electrical interconnection structure of said semiconductor device to a portion of the metallized surface pattern of electrical circuits of said substrate thereby forming an electrical circuit; providing a source of fill material in the chamber; placing fill material proximate the perimeter of said gap; pressurizing the chamber with the fluid under pressure; providing a source of vacuum on an opposite side of said substrate from the chamber; and positioning the exterior surface of said substrate relative to said source of vacuum and positioning the perimeter of said gap relative to said source of fluid under pressure for said vacuum to draw through at least one of said thermal vias and with said fluid under pressure and said vacuum urging said fill material from said perimeter into said gap.

Claim 4

A method of backfilling a flip-chip gap with fill material, said method comprising: providing a flip chip semiconductor device assembly, said semiconductor device assembly including a flip chip semiconductor device having interconnection structure thereon mounted on a substrate to define a gap thereinbetween, said gap having a perimeter, said substrate having at least one thermal via of a plurality of thermal vias formed therein to extend between said gap and an external surface of said substrate; providing a support for said flip chip semiconductor device assembly; providing a pressure chamber connected to said support; providing a source of pressure; connecting said source of pressure to said pressure chamber to supply a fluid under pressure thereto; providing a vacuum chamber connected to said support; providing a source of vacuum; connecting said source of vacuum to said vacuum chamber to draw a vacuum therein; providing a source of fill material in said pressure chamber; positioning a fill material about the perimeter of said gap; positioning said flip chip semiconductor device assembly having said fill material about the perimeter of said gap in said pressure chamber and with thermal vias extending into said vacuum chamber; operating said source of pressure to create a pressure in said pressure chamber to urge said fill material into said gap; and simultaneously operating said source of vacuum to draw a vacuum in said vacuum chamber and in said gap through said thermal vias to urge said fill material into said gap.

Claim 5

A method of backfilling a flip-chip gap with fill material, said method comprising: providing a flip chip semiconductor device assembly, said semiconductor device assembly including a flip chip semiconductor device having interconnection structure thereon mounted on a substrate to define a gap thereinbetween, said gap having a perimeter, said substrate having at least one thermal via of a plurality of thermal vias formed therein to extend between said gap and an external surface of said substrate; providing a support for said flip chip semiconductor device assembly; providing a pressure chamber connected to said support; providing a source of pressure; connecting said source of pressure to said pressure chamber to supply a fluid under pressure thereto; providing a vacuum chamber connected to said support; providing a source of vacuum; connecting said source of vacuum to said vacuum chamber to draw a vacuum therein; providing a source of fill material in said pressure chamber; positioning a fill material about the perimeter of said gap; positioning said flip chip semiconductor device assembly having said fill material about the perimeter of said gap in said pressure chamber and with thermal vias extending into said vacuum chamber; operating said source of pressure to create a pressure in said pressure chamber to urge said fill material into said gap; and simultaneously operating said source of vacuum to draw a vacuum in said vacuum chamber and in said gap through said thermal vias to urge said fill material into said gap.