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Process for titanium nitride deposition using five- and six-coordinate titanium complexes

Assignee: Micron Technology Inc
•
Filing: 1996-12-13
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Granted: 1999-02-02
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Expires: 2016-12-13
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Abstract

Abstract A method is provided for forming films comprising TiN or Ti--Si--N employing the techniques of chemical vapor deposition to decompose a vapor comprising a compound of the formula Ti N(R 1 )(R 2 )! x (R 3 )N--C(R 4 )(R 5 )--C(R 6 )(R 7 )--N(R 8 )(R 9 )! y wherein each of R 1 , R 2 , R 3 , R 8 and R 9 are (C 1 -C 4 ) alkyl, each of R 4 , R 5 , R 6 , and R 7 are each H or (C 1 -C 4 ) alkyl and x and y are 1-3; so as to deposit a film comprising titanium on the surface of a substrate.

Inventors

  • 👤 Brian A. Vaartstra
  • 👤 Wing-Cheong Gilbert Lai

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 02:04
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 149 words
A method for applying a titanium nitride film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a reactant gas and a compound of the formula Ti N(R 1 )(R 2 )! x (R 3 )N--C(R 4 )(R 5 )--C(R 6 )(R 7 )--N(R 8 )(R 9 )! y wherein: (a) each of R 1 , R 2 , R 3 , R 8 and R 9 are (C 1 -C 4 )alkyl; (b) each of R 4 , R 5 , R 6 , and R 7 are each H or (C 1 -C 4 )alkyl; and (c) each of x and y are 1-3; (d) wherein each (C 1 -C 4 )alkyl may optionally be interrupted by 1-3N, non-peroxide oxygen or Si, or mixtures thereof; so as to deposit a film comprising titanium nitride on the surface.
Claim 2
Independent Claim 149 words
A method for applying a titanium nitride film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a reactant gas and a compound of the formula Ti N(R 1 )(R 2 )! x (R 3 )N--C(R 4 )(R 5 )--C(R 6 )(R 7 )--N(R 8 )(R 9 )! y wherein: (a) each of R 1 , R 2 , R 3 , R 8 and R 9 are (C 1 -C 4 )alkyl; (b) each of R 4 , R 5 , R 6 , and R 7 are each H or (C 1 -C 4 )alkyl; and (c) each of x and y are 1-3; (d) wherein each (C 1 -C 4 )alkyl may optionally be interrupted by 1-3N, non-peroxide oxygen or Si, or mixtures thereof; so as to deposit a film comprising titanium nitride on the surface.
Claim 3
Dependent Claim 44 words
The method of claim 1 wherein R 4 , R 5 , R 6 , and R 7 are each H and wherein R 1 , R 2 , R 3 , R 8 and R 9 are (C 1 -C 4 ) alkyl.
Claim 4
Dependent Claim 25 words
The method of claim 2 wherein R 1 , R 2 , R 3 , R 8 and R 9 are each CH 3 .
Claim 5
Dependent Claim 13 words
The method of claim 3 wherein x is 2 and y is 2.
Claim 6
Dependent Claim 13 words
The method of claim 3 wherein x is 3 and y is 1.
Claim 7
Dependent Claim 18 words
The method of claim 1, wherein each (C 1 -C 4 )alkyl may optionally be interrupted by 1-2N.
Claim 8
Independent Claim 54 words
A method for applying a titanium nitride film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a reactant gas and a 5-coordinate titanium precursor compound that comprises a bis-chelating diamino ligand, so as to deposit a film comprising titanium nitride on the surface.
Claim 9
Independent Claim 54 words
A method for applying a titanium nitride film on the surface of a substrate comprising employing the techniques of chemical vapor deposition to decompose a vapor comprising a reactant gas and a 5-coordinate titanium precursor compound that comprises a bis-chelating diamino ligand, so as to deposit a film comprising titanium nitride on the surface.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2002-02-01 2002-08-03 2003-02-02 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2006-02-01 2006-08-03 2007-02-02 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2010-02-01 2010-08-03 2011-02-02 $7700.00 Window Closed / Lapsed

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