US5603988A
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Method for depositing a titanium or tantalum nitride or nitride silicide
Assignee: International Business Machines Corp
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Filing: 1995-06-02
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Granted: 1997-02-18
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Expires: 2015-06-02
Abstract
Abstract Titanium and/or tantalum nitrides or nitride silicides are deposited onto a substrate by chemical vapor deposition of a titanium and/or tantalum silylamido complex.
Inventors
- 👤 Michael Shapiro
- 👤 Ravi Kanjolia
- 👤 Ben C. Hui
- 👤 Paul F. Seidler
- 👤 Karen Holloway
- 👤 Richard Conti
- 👤 Jonathan Chapple-Sokol
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:10
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/22; C23C16/30; C23C16/34
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
92 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride silicide, tantalum nitride silicide and mixtures thereof, which comprises exposing said substrate to a silylamido complex selected from the group consisting of titanium silylamido complex, tantalum silylamido complex and mixtures thereof, wherein said silylamido complex is in vapor form, and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex along with retention of some silyl groups of said silylamido complex to form said material.
Claim 2
Dependent Claim
92 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride silicide, tantalum nitride silicide and mixtures thereof, which comprises exposing said substrate to a silylamido complex selected from the group consisting of titanium silylamido complex, tantalum silylamido complex and mixtures thereof, wherein said silylamido complex is in vapor form, and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex along with retention of some silyl groups of said silylamido complex to form said material.
Claim 3
Dependent Claim
102 words
The method as described in claim 1 where the silylamido complex has the chemical formula M(N w (SiR 3 ) x (SiR 2 ) y ) z , or M[N w (SiR 3 ) x (SiR 2 ) y ] z (X) v wherein each w, z and v individually is an integer of 1-4; each x and y individually is an integer of 0-4, provided that at least one of x and y is at least 1; each X is NR 2 or a halogen; each R individually is alkyl, aryl, allyl or vinyl; and M=titanium or tantalum or mixtures thereof.
Claim 4
Dependent Claim
9 words
The method of claim 2 wherein M is titanium.
Claim 5
Dependent Claim
9 words
The method of claim 2 wherein M is tantalum.
Claim 6
Dependent Claim
16 words
The method of claim 2 wherein each x and y individually is an integer of 1-4.
Claim 7
Dependent Claim
20 words
The method of claim 2 wherein said complex is represented by the formula Ti(N(SiR 3 ) 2 ) 4 .
Claim 8
Dependent Claim
10 words
The method of claim 1 wherein said substrate is silicon.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein said temperature is about 200° to about 800° C.
Claim 10
Dependent Claim
15 words
The method of claim 1 wherein said temperature is about 300° to about 500° C.
Claim 11
Dependent Claim
26 words
The method of claim 1 wherein said material is in the form of a coating having a thickness of about 10 angstroms to about 1000 angstroms.
Claim 12
Dependent Claim
80 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride, titanium nitride silicide, and mixtures thereof, which comprises exposing said substrate to a silylamido complex represented by the formula ##STR7## wherein each R individually is alkyl, aryl, allyl or vinyl; wherein said silylamido complex is in vapor form, and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex to form said material.
Claim 13
Dependent Claim
80 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride, titanium nitride silicide, and mixtures thereof, which comprises exposing said substrate to a silylamido complex represented by the formula ##STR7## wherein each R individually is alkyl, aryl, allyl or vinyl; wherein said silylamido complex is in vapor form, and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex to form said material.
Claim 14
Dependent Claim
10 words
The method of claim 11 wherein each R is methyl.
Claim 15
Dependent Claim
21 words
The method of claim 11 wherein said alkyl contains 1 to 6 carbon atoms and said aryl contains 6-9 carbon atoms.
Claim 16
Dependent Claim
15 words
The method of claim 11 wherein said temperature is about 200° to about 800° C.
Claim 17
Dependent Claim
15 words
The method of claim 11 wherein said temperature is about 300° to about 500° C.
Claim 18
Dependent Claim
84 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride, titanium nitride silicide, and mixtures thereof, which comprises exposing said substrate to a silylamido complex represented by the formula ##STR8## wherein each X is NR' 2 or a halogen and wherein each R and R' individually is alkyl, aryl, allyl or vinyl; and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex to form said material.
Claim 19
Dependent Claim
84 words
A chemical vapor deposition method for forming on a substrate a material selected from the group consisting of titanium nitride, titanium nitride silicide, and mixtures thereof, which comprises exposing said substrate to a silylamido complex represented by the formula ##STR8## wherein each X is NR' 2 or a halogen and wherein each R and R' individually is alkyl, aryl, allyl or vinyl; and said substrate is at a temperature sufficient to cause cleavage of Si--N bonds of said silylamido complex to form said material.
Claim 20
Dependent Claim
15 words
The method of claim 16 wherein X is NR' 2 and each R is methyl.
Claim 21
Dependent Claim
16 words
The method of claim 16 wherein X is N (ethyl) 2 and each R is methyl.
Claim 22
Dependent Claim
14 words
The method of claim 16 wherein X is Cl and each R is methyl.
Claim 23
Dependent Claim
21 words
The method of claim 16 wherein said alkyl contains 1 to 6 carbon atoms and said aryl contains 6-9 carbon atoms.
Claim 24
Dependent Claim
15 words
The method of claim 16 wherein said temperature is about 200° to about 800° C.
Claim 25
Dependent Claim
15 words
The method of claim 16 wherein said temperature is about 300° to about 500° C.
References Cited (Backward Citations)
US5178911A
Cited
US5344948A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |