Patent US5858880A successfully refreshed from Google Patents.
US5858880A
Expired / Lapsed
US
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Method of treating a semi-conductor wafer
Assignee: Trikon Technologies Ltd
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Filing: 1995-05-10
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Granted: 1999-01-12
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Expires: 2015-05-10
Abstract
Abstract In a method of treating a semi-conductor wafer a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
Inventors
- 👤 Christopher David Dobson
- 👤 Adrian Kiermasz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6512; H10P14/6514; H10P14/6516; H10P14/6548; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; Y; Y10; Y10S; Y10S438/00; Y10S438/902
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
82 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a chamber; introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
Claim 2
Independent Claim
82 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a chamber; introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.
Claim 3
Dependent Claim
19 words
A method as claimed in claim 1, wherein the diffusion layer is deposited at between -20° and 60° C.
Claim 4
Dependent Claim
17 words
A method as claimed in claim 2, wherein the diffusion layer is deposited at around 0° C.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein the diffusion layer is deposited by Plasma Enhanced Chemical Vapour Deposition.
Claim 6
Dependent Claim
19 words
A method as claimed in claim 1, wherein the diffusion layer is of the order of 500 Å thick.
Claim 7
Dependent Claim
13 words
A method as claimed in claim 1, further including a preliminary heating stage.
Claim 8
Dependent Claim
24 words
A method as claimed in claim 6, wherein the diffusion layer is subsequently capped with a capping layer and the wafer is then baked.
Claim 9
Dependent Claim
25 words
A method as claimed in claim 1, wherein the deposition of the polymer layer is preceded by the deposition of an underlayer or seed layer.
Claim 10
Dependent Claim
35 words
A method as claimed in claim 1, further comprising treating the wafer with an N 2 O, O 2 or an O 2 containing gas plasma after the underlayer or seed layer has been deposited.
Claim 11
Independent Claim
119 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a first chamber; introducing into the first chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting within the first chamber the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing within the first chamber a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate; positioning the wafer in a second chamber; depositing within the second chamber a capping layer on the diffusion layer; and baking the wafer within the second chamber.
Claim 12
Independent Claim
119 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a first chamber; introducing into the first chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting within the first chamber the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing within the first chamber a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate; positioning the wafer in a second chamber; depositing within the second chamber a capping layer on the diffusion layer; and baking the wafer within the second chamber.
Claim 13
Dependent Claim
34 words
A method as claimed in claim 10, further comprising, prior to positioning the wafer in the first chamber and forming the polymer and diffusion layers, depositing an underlayer or seed layer on the wafer.
Claim 14
Dependent Claim
19 words
A method as claimed in claim 11, wherein the underlayer or seed layer is deposited in the second chamber.
Claim 15
Dependent Claim
23 words
A method as claimed in claim 10, wherein the first chamber is a cold chamber and the second chamber is a hot chamber.
Claim 16
Dependent Claim
23 words
A method as claimed in claim 11, wherein the first chamber is a cold chamber and the second chamber is a hot chamber.
Claim 17
Dependent Claim
23 words
A method as claimed in claim 12, wherein the first chamber is a cold chamber and the second chamber is a hot chamber.
Claim 18
Independent Claim
91 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a chamber; introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate, wherein the diffusion layer acts as a permeable membrane.
Claim 19
Independent Claim
91 words
A method of treating a semiconductor wafer, comprising: positioning the wafer in a chamber; introducing into the chamber a silicon containing gas or vapour and a compound, containing peroxide bonding, in vapour form; reacting the silicon-containing gas or vapour with the compound to form a short-chain polymer on the wafer to form a generally planar polymer layer; and depositing a diffusion layer on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate, wherein the diffusion layer acts as a permeable membrane.
References Cited (Backward Citations)
US3822328A
Cited
US4096315A
Cited
US4397722A
Cited
GB2125423A
Cited
US4494303A
Cited
US4759993A
Cited
US4781942A
Cited
EP0353818A1
Cited
EP0382932A2
Cited
WO1991012630A1
Cited
US5314724A
Cited
US5506008A
Cited
EP0568235A1
Cited
WO1994001885A1
Cited
US5360646A
Cited
US5618745A
Cited
US5627391A
Cited
EP0743675A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-11 | 2002-07-13 | 2003-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-11 | 2006-07-13 | 2007-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-11 | 2010-07-13 | 2011-01-12 | $7700.00 | Window Closed / Lapsed |