EP0382932A2
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EP
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Process for the vapor deposition of polysilanes
Assignee: International Business Machines Corp
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Filing: 1989-12-16
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Granted: —
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Expires: 2009-12-16
Abstract
Abstract Disclosed is a process for forming a film comprising a polysilane composition on a substrate. The film is formed by vapor deposition directly on a substrate, thus avoiding the cumbersome steps ordinarily encountered in preparing and applying polysilanes by conventional spin application techniques. The film is used in a lithographic process for forming an image on a substrate.
Inventors
- 👤 David M. Dobuzinsky
- 👤 Mark C. Hakey
- 👤 Steven J. Holmes
- 👤 David V. Horak
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 06:26
CPC Classifications
C; C23; C23C; C23C18/00; C23C18/02; G; G03; G03F; G03F7/00; G03F7/16; G03F7/167; C23C14/00; C23C14/22; C23C14/24; G03F7/004; G03F7/075; G03F7/0754
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
35 words
Process for forming a film on a substrate, comprising exposing said substrate to the vapor of a polymerizable silane monomer under such conditions as to deposit on said substrate a film comprising a polysilane composition.
Claim 2
Dependent Claim
35 words
Process for forming a film on a substrate, comprising exposing said substrate to the vapor of a polymerizable silane monomer under such conditions as to deposit on said substrate a film comprising a polysilane composition.
Claim 3
Dependent Claim
59 words
Process of claim 1, wherein said polymerizable silane monomer has the formula wherein: R is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; or amino; R′ is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; amino; halo; or methyl halo; and R˝ is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; or amino.
Claim 4
Dependent Claim
25 words
Process of claim 2, wherein: R is C₁-C₃ alkyl; R′ is C₁-C₄ alkyl, trimethyl silyl, aryl, fluoro or methyl fluoro; and R˝ is C₁-C₃ alkyl.
Claim 5
Dependent Claim
11 words
Process of claim 3, wherein said polymerizable silane monomer is pentamethylmethoxydisilane.
Claim 6
Dependent Claim
14 words
Process of claim 1, wherein said substrate is silicon dioxide coated silicon or silicon.
Claim 7
Dependent Claim
51 words
Process of claim 1, wherein said polymerizable silane monomer is heated to a temperature ranging from about 200 to about 650 o C at a pressure ranging from about 0.067 mbar to about 133.3 mbar (50 mtorr to about 100 torr) for a period of about 1 to about 20 minutes.
Claim 8
Dependent Claim
32 words
Process of claim 6, wherein said temperature ranges from about 500 to about 600 o C and said pressure ranges from about 2.67 to about 6.67 mbar (2 to about 5 torr).
Claim 9
Dependent Claim
53 words
Process of one or several of claims 1 to 7 for forming an image on a substrate, said process further comprising the steps of: after depositing on said substrate a film comprising a polysilane composition; exposing said film in a predetermined pattern to radiation; and removing the radiation exposed portions of said film.
Claim 10
Dependent Claim
22 words
Process of claim 8, wherein said film is exposed to radiation having a wavelength ranging from about 240 to about 260 nanometers.
Claim 11
Dependent Claim
21 words
Process of claim 8, wherein said polymerizable silane monomer is pentamethylmethoxydisilane, and said substrate is silicon dioxide coated silicon or silicon.
Claim 12
Dependent Claim
144 words
Process of claim 8 for forming an image on a substrate, said method comprising the steps of: exposing said substrate to the vapor of a polymerizable silane monomer, which is heated to a temperature ranging from about 500 to about 600 o C at a pressure ranging from about 2.67 to about 6.67 mbar (2 to about 5 torr), so as to deposit on said substrate a film comprising a polysilane composition, said polymerizable silane monomer having the formula wherein: R is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; or amino; R′ is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; amino; halo; or methyl halo; and R˝ is H; C₁-C₄ alkyl, alkenyl, alkynyl, alkoxy or alkyl silyl; aryl; or amino; exposing said film in a predetermined pattern to radiation; and removing the radiation exposed portions of said film.
References Cited (Backward Citations)
No citation records indexed.
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