Patent US5808364A successfully refreshed from Google Patents.
US5808364A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Interconnects using metal spacers
Assignee: International Business Machines Corp
•
Filing: 1997-04-08
•
Granted: 1998-09-15
•
Expires: 2017-04-08
Abstract
Abstract The preferred embodiment of the present invention provides increased conductivity between interlevel interconnection lines. The preferred embodiment uses sidewall spacers on the sides of the interconnection lines to increase the contact area between interconnection lines and interconnect studs. This increase in area improves connection resistance and allows further device scaling without unacceptable decreases in the conductivity of the connection, and without adding significant expense in the fabrication process.
Inventors
- 👤 John E. Cronin
- 👤 Thomas J. Hartswick
- 👤 Anthony K. Stamper
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 22:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10W20/039; H10W20/064; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/435; H10W20/495; H10W20/496; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
132 words
A semiconductor device interconnect structure for improving the conductivity of an interlevel interconnection between a first level electrically conductive line and a second level electrically conductive line on the semiconductor device, the interconnect structure comprising: a) at least one conductive sidewall spacer on a side of the first level electrically conductive line; and b) an interlevel interconnect contacting at least a top portion of the first level electrically conductive line and at least a portion of the at least one conductive sidewall spacer such that said is electrically connected to said first level electrically conductive line through said top portion of said first level electrically conductive line and said at least one conductive sidewall spacer, said interlevel interconnect connecting said first level electrically conductive line to said second level electrically conductive line.
Claim 2
Dependent Claim
132 words
A semiconductor device interconnect structure for improving the conductivity of an interlevel interconnection between a first level electrically conductive line and a second level electrically conductive line on the semiconductor device, the interconnect structure comprising: a) at least one conductive sidewall spacer on a side of the first level electrically conductive line; and b) an interlevel interconnect contacting at least a top portion of the first level electrically conductive line and at least a portion of the at least one conductive sidewall spacer such that said is electrically connected to said first level electrically conductive line through said top portion of said first level electrically conductive line and said at least one conductive sidewall spacer, said interlevel interconnect connecting said first level electrically conductive line to said second level electrically conductive line.
Claim 3
Dependent Claim
32 words
The semiconductor device interconnect structure of claim 1 wherein the first level conductive line comprises a first metal layer comprising aluminum copper and a top layer comprising titanium on said aluminum copper.
Claim 4
Dependent Claim
25 words
The semiconductor device interconnect structure of claim 1 the first level conductive line comprises a step in a sidewall of the first level conductive line.
Claim 5
Dependent Claim
50 words
The semiconductor device interconnect structure of claim 3 wherein the first level conductive line comprises a deposited and etched conductive material, and wherein the step is formed by stopping the etch before the conductive material is etched completely through and restarting the etch after the conductive sidewall spacer is formed.
Claim 6
Dependent Claim
21 words
The semiconductor device interconnect structure of claim 1 wherein the conductive sidewall spacer comprises a directionally etched conformally deposited conductive material.
Claim 7
Dependent Claim
14 words
The semiconductor device interconnect structure of claim 5 wherein said sidewall spacer comprises tungsten.
Claim 8
Dependent Claim
33 words
The semiconductor device interconnect structure of claim 1 wherein the first level conductive line comprises a layer of first conductive material and a layer of second conductive material atop said first conductive material.
Claim 9
Dependent Claim
35 words
The semiconductor device interconnect structure of claim 7 wherein said layer of first conductive material extends beyond a side of said second conductive material, forming a step in a side of the first conductive line.
Claim 10
Dependent Claim
28 words
The semiconductor device interconnect structure of claim 8 wherein the first conductive material comprises titanium, the second conductive material comprises aluminum copper and the sidewall spacer comprises tungsten.
Claim 11
Dependent Claim
55 words
The semiconductor device interconnect structure of claim 8 the first level electrically conductive line is atop a lower interconnect stud, and wherein the first level electrically conductive line interface with said lower interconnect stud forms a step having a top surface and wherein said at least one conductive sidewall spacer contacts said step top surface.
Claim 12
Dependent Claim
27 words
The semiconductor device interconnect structure of claim 1 further comprising a polymer film formed between the side of the first conductive line and the conductive sidewall spacer.
References Cited (Backward Citations)
US5146291A
Cited
US5207868A
Cited
US5061647A
Cited
US5360510A
Cited
US5217570A
Cited
US5277757A
Cited
US5053351A
Cited
US5221430A
Cited
US5170243A
Cited
US5291053A
Cited
US5670806A
Cited
US5514622A
Cited
US5484747A
Cited
US5633781A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-14 | 2002-03-16 | 2002-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-14 | 2006-03-16 | 2006-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-14 | 2010-03-16 | 2010-09-15 | $7700.00 | Window Closed / Lapsed |