US5633781A
Expired / Lapsed
US
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Isolated sidewall capacitor having a compound plate electrode
Assignee: International Business Machines Corp
•
Filing: 1995-12-22
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Granted: 1997-05-27
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Expires: 2015-12-22
Abstract
Abstract A capacitor structure is provided, with a first conductor on top of a substrate having at least one layer of dielectric material thereon; a first non-conductor on top of and substantially in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Inventors
- 👤 Katherine L. Saenger
- 👤 David E. Kotecki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 09:46
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
117 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening, wherein the third conductor does not fill the second opening so that a third opening is formed therein.
Claim 2
Dependent Claim
117 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening, wherein the third conductor does not fill the second opening so that a third opening is formed therein.
Claim 3
Dependent Claim
20 words
The capacitor structure of claim 1 wherein the second conductor forms approximately a 90 degree angle with the first conductor.
Claim 4
Dependent Claim
17 words
The capacitor structure of claim 1 wherein the first and second conductors form a compound plate electrode.
Claim 5
Dependent Claim
19 words
The capacitor structure of claim 1 wherein the non-conductive sidewall spacer is made of a high dielectric constant material.
Claim 6
Dependent Claim
20 words
The capacitor structure of claim 4 wherein the high dielectric constant material has a dielectric constant greater than approximately 20.
Claim 7
Dependent Claim
29 words
The capacitor structure of claim 4 wherein the high dielectric constant material is a material selected from the group consisting of ferroelectrics, paraelectrics, perovskites, pyrochlores, relaxors and layered perovskites.
Claim 8
Dependent Claim
16 words
The capacitor structure of claim 4 wherein the high dielectric constant material is (Ba,Sr)TiO 3 .
Claim 9
Dependent Claim
16 words
The capacitor structure of claim 1 wherein the first non-conductor is a low dielectric constant material.
Claim 10
Dependent Claim
38 words
The capacitor structure of claim 8 wherein the low dielectric constant material is a material selected from the group consisting of SiO 2 , SiN x , Al 2 O 3 , TiO 2 and HfO 2 .
Claim 11
Dependent Claim
48 words
The capacitor structure of claim 1 wherein the first conductor is made of a material selected from the group consisting of noble metals, alloys of noble metals with noble or non-noble metals, metals whose oxides are conducting, electrically conducting oxides and electrically conducting and oxidation-resistant nitrides and silicides.
Claim 12
Dependent Claim
44 words
The capacitor structure of claim 1 wherein the first conductor is made of a material selected from the group consisting of Au, Pt, Pd, Ir, Rh, Ru, Mo, RuO 2 , IrO 2 , Re 2 O 3 , TiN, TaN, TaSiN and WN.
Claim 13
Dependent Claim
48 words
The capacitor structure of claim 1 wherein the second conductor is made of a material selected from the group consisting of noble metals, alloys of noble metals with noble or non-noble metals, metals whose oxides are conducting, electrically conducting oxides and electrically conducting and oxidation-resistant nitrides and silicides.
Claim 14
Dependent Claim
40 words
The capacitor structure of claim 1 wherein the second conductor is made of a material selected from the group consisting of Au, Pt, Pd, Ir, Rh, Ru, Mo, RuO 2 , IrO 2 , and Re 2 O 3 .
Claim 15
Dependent Claim
40 words
The capacitor structure of claim 1 wherein the third conductor is made of a material selected from the group consisting of Rh, Pt, Pd, Ru, Ir, Au, TiN, WN, RuO 2 , Re 2 O 3 and IrO 2 .
Claim 16
Dependent Claim
20 words
The capacitor structure of claim 1 wherein the third conductor has a top portion extending out over the first non-conductor.
Claim 17
Dependent Claim
16 words
The capacitor structure of claim 1 wherein the third opening is filled with a fill material.
Claim 18
Dependent Claim
19 words
The capacitor structure of claim 16 wherein the third conductor lines the sides and bottom of the second opening.
Claim 19
Dependent Claim
33 words
The capacitor structure of claim 17 wherein the fill material is a material selected from the group consisting of TiN, TaSiN, SiO 2 , Al 2 O 3 , and SiN x .
Claim 20
Dependent Claim
39 words
The capacitor structure of claim 16 wherein the fill material is a material selected from the group consisting of noble metals, alloys of noble metals with noble or non-electrically conducting oxides and electrically conducting and oxidation-resistant nitrides and silicides.
Claim 21
Dependent Claim
19 words
The capacitor structure of claim 1 wherein the first conductor is in direct contact with the substrate dielectric layer.
Claim 22
Dependent Claim
29 words
The capacitor structure of claim 1 wherein the high dielectric constant material is a material selected from the group consisting of ferroelectrics, paraelectrics, perovskites, pyrochlores, relaxors and layered perovskites.
Claim 23
Dependent Claim
19 words
The capacitor structure of claim 1 wherein the first conductor is in direct contact with the substrate dielectric layer.
Claim 24
Dependent Claim
112 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a second non-conductor disposed between the first conductor and the substrate dielectric layer.
Claim 25
Dependent Claim
112 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a second non-conductor disposed between the first conductor and the substrate dielectric layer.
Claim 26
Dependent Claim
19 words
The capacitor structure of claim 23 wherein the second conductor is in direct contact with the substrate dielectric layer.
Claim 27
Dependent Claim
17 words
The capacitor structure of claim 23 wherein the second non-conductor is in register with the first conductor.
Claim 28
Dependent Claim
15 words
The capacitor structure of claim 23 further comprising a third non-conductor below the second non-conductor.
Claim 29
Dependent Claim
21 words
The capacitor structure of claim 26 wherein the third non-conductor extends underneath the second conductor to contact the non-conductive sidewall spacer.
Claim 30
Dependent Claim
19 words
The capacitor structure of claim 26 wherein the third non-conductor is in direct contact with the substrate dielectric layer.
Claim 31
Dependent Claim
21 words
The capacitor structure of claim 26 wherein the third non-conductor extends underneath the non-conductive sidewall spacer to contact the third conductor.
Claim 32
Dependent Claim
33 words
The capacitor structure of claim 23 wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
Claim 33
Dependent Claim
112 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second non-conductor on top of and in register with the first non-conductor a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Claim 34
Dependent Claim
112 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second non-conductor on top of and in register with the first non-conductor a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening.
Claim 35
Dependent Claim
124 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a conductive plug formed in the substrate dielectric layer, the conductive plug providing electrical contact between the third conductor and circuit elements in the substrate.
Claim 36
Dependent Claim
124 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a conductive plug formed in the substrate dielectric layer, the conductive plug providing electrical contact between the third conductor and circuit elements in the substrate.
Claim 37
Dependent Claim
29 words
The capacitor structure of claim 32 further comprising a diffusion barrier layer between the conductive plug and the third conductor, the diffusion barrier in register with the conductive plug.
Claim 38
Dependent Claim
20 words
The capacitor structure of claim 32 wherein the second conductor forms approximately a 90 degree angle with the first conductor.
Claim 39
Dependent Claim
27 words
The capacitor structure of claim 32 wherein the non-conductive sidewall spacer is made of a high dielectric constant material having a dielectric constant greater than approximately 20.
Claim 40
Dependent Claim
16 words
The capacitor structure of claim 32 wherein the high dielectric constant material is (Ba,Sr)TiO 3 .
Claim 41
Dependent Claim
16 words
The capacitor structure of claim 32 wherein the first non-conductor is a low dielectric constant material.
Claim 42
Dependent Claim
38 words
The capacitor structure of claim 37 wherein the low dielectric constant material is a material selected from the group consisting of SiO 2 , SiN x , Al 2 O 3 , TiO 2 and HfO 2 .
Claim 43
Dependent Claim
48 words
The capacitor structure of claim 32 wherein the first conductor is made of a material selected from the group consisting of noble metals, alloys of noble metals with noble or non-noble metals, metals whose oxides are conducting, electrically conducting oxides and electrically conducting and oxidation-resistant nitrides and silicides.
Claim 44
Dependent Claim
44 words
The capacitor structure of claim 32 wherein the first conductor is made of a material selected from the group consisting of Au, Pt, Pd, Ir, Rh, Ru, Mo, RuO 2 , IrO 2 , Re 2 O 3 , TiN, TaN, TaSiN and WN.
Claim 45
Dependent Claim
48 words
The capacitor structure of claim 32 wherein the second conductor is made of a material selected from the group consisting of noble metals, alloys of noble metals with noble or non-noble metals, metals whose oxides are conducting, electrically conducting oxides and electrically conducting and oxidation-resistant nitrides and silicides.
Claim 46
Dependent Claim
40 words
The capacitor structure of claim 32 wherein the second conductor is made of a material selected from the group consisting of Au, Pt, Pd, Ir, Rh, Ru, Mo, RuO 2 , IrO 2 , and Re 2 O 3 .
Claim 47
Dependent Claim
40 words
The capacitor structure of claim 32 wherein the third conductor is made of a material selected from the group consisting of Rh, Pt, Pd, Ru, Ir, Au, TiN, WN, RuO 2 , Re 2 O 3 and IrO 2 .
Claim 48
Dependent Claim
20 words
The capacitor structure of claim 32 wherein the third conductor has a top portion extending out over the first non-conductor.
Claim 49
Dependent Claim
22 words
The capacitor structure of claim 32 further comprising a conductive sidewall spacer in between the non-conductive sidewall spacer and the third conductor.
Claim 50
Dependent Claim
33 words
The capacitor structure of claim 45 wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
Claim 51
Dependent Claim
113 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a conductive sidewall spacer in between the non-conductive sidewall spacer and the third conductor.
Claim 52
Dependent Claim
113 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; a third conductor formed in the second opening; and a conductive sidewall spacer in between the non-conductive sidewall spacer and the third conductor.
Claim 53
Dependent Claim
33 words
The capacitor structure of claim 47 wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
Claim 54
Dependent Claim
126 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening; wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
Claim 55
Dependent Claim
126 words
A capacitor structure, comprising: a substrate having at least one layer of dielectric material thereon; a first conductor on top of the substrate; a first non-conductor on top of and in register with the first conductor, the first conductor and first non-conductor having a first opening formed therein; a second conductor, in electrical contact with the first conductor, formed on the sidewalls of the first opening; a non-conductive sidewall spacer formed in the first opening and contacting the second conductor, the non-conductive sidewall spacer having a second opening formed therein; and a third conductor formed in the second opening; wherein the substrate dielectric layer has a third opening in register with the second opening, the second and third openings being contiguously filled with the third conductor.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-05-26 | 2000-11-25 | 2001-05-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-05-26 | 2004-11-25 | 2005-05-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-05-26 | 2008-11-25 | 2009-05-27 | $7700.00 | Window Closed / Lapsed |