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US5801097A
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US
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Thermal annealing method employing activated nitrogen for forming nitride layers
Assignee: Vanguard International Semiconductor Corp
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Filing: 1997-03-10
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Granted: 1998-09-01
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Expires: 2017-03-10
Abstract
Abstract A thermal annealing method for forming a nitride layer within an integrated circuit. There is first provided a substrate. There is then formed over the substrate a nitride forming material layer. The nitride forming material layer is then annealed through a thermal annealing method in the presence of an atmosphere of activated nitrogen to yield a nitride layer. The method is particularly useful for forming titanium nitride barrier layers and titanium nitride adhesion promoter layers within integrated circuits.
Inventors
- 👤 Tony Liang-Tung Chang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:54
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10W20/033
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
82 words
A thermal annealing method for forming a nitride layer within an integrated circuit comprising: providing a substrate; forming over the substrate a nitride forming material layer; and annealing through a thermal annealing method the nitride forming material layer in the presence of an atmosphere of activated nitrogen to yield a nitride layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 2
Dependent Claim
82 words
A thermal annealing method for forming a nitride layer within an integrated circuit comprising: providing a substrate; forming over the substrate a nitride forming material layer; and annealing through a thermal annealing method the nitride forming material layer in the presence of an atmosphere of activated nitrogen to yield a nitride layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 3
Dependent Claim
35 words
The method of claim 1 wherein the nitride forming material layer is formed from a nitride forming material selected from the group of materials consisting of titanium, aluminum, silicon, hafnium, zirconium, vanadium, niobium and tantalum.
Claim 4
Dependent Claim
22 words
The method of claim 2 wherein the thickness of the nitride forming material layer is from about 10 to about 2000 angstroms.
Claim 5
Dependent Claim
22 words
The method of claim 1 wherein the atmosphere of activated nitrogen is formed through a plasma activation of the atmosphere of nitrogen.
Claim 6
Dependent Claim
23 words
The method of claim 1 wherein the thermal annealing method heats the substrate to a temperature of greater than about 900 degrees centigrade.
Claim 7
Dependent Claim
82 words
A thermal annealing method for forming a titanium nitride layer within an integrated circuit comprising: providing a substrate; forming over the substrate a titanium metal layer; and annealing through a thermal annealing method the titanium metal layer in the presence of an atmosphere of activated nitrogen to yield a titanium nitride layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 8
Dependent Claim
82 words
A thermal annealing method for forming a titanium nitride layer within an integrated circuit comprising: providing a substrate; forming over the substrate a titanium metal layer; and annealing through a thermal annealing method the titanium metal layer in the presence of an atmosphere of activated nitrogen to yield a titanium nitride layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 9
Dependent Claim
21 words
The method of claim 6 wherein the thickness of the titanium metal layer is from about 200 to about 2000 angstroms.
Claim 10
Dependent Claim
22 words
The method of claim 6 wherein the atmosphere of activated nitrogen is formed through a plasma activation of the atmosphere of nitrogen.
Claim 11
Dependent Claim
23 words
The method of claim 6 wherein the thermal annealing method heats the substrate to a temperature of greater than about 900 degrees centigrade.
Claim 12
Dependent Claim
91 words
A thermal annealing method for forming a titanium nitride barrier layer within an integrated circuit comprising: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the semiconductor substrate a titanium metal layer; and annealing through a thermal annealing method the titanium metal layer in the presence of an atmosphere of activated nitrogen to yield a titanium nitride barrier layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 13
Dependent Claim
91 words
A thermal annealing method for forming a titanium nitride barrier layer within an integrated circuit comprising: providing a semiconductor substrate having semiconductor devices formed thereupon; forming over the semiconductor substrate a titanium metal layer; and annealing through a thermal annealing method the titanium metal layer in the presence of an atmosphere of activated nitrogen to yield a titanium nitride barrier layer, where the atmosphere of activated nitrogen is formed employing at least one of: an electrical discharge within an atmosphere of nitrogen; and an ultra-violet exposure of the atmosphere of nitrogen.
Claim 14
Dependent Claim
21 words
The method of claim 10 wherein the thickness of the titanium metal layer is from about 200 to about 2000 angstroms.
Claim 15
Dependent Claim
18 words
The method of claim 10 wherein the atmosphere of activated nitrogen is formed in an atmosphere of nitrogen.
Claim 16
Dependent Claim
24 words
The method of claim 12 where the thermal annealing method heats the semiconductor substrate to a temperature of greater than about 900 degrees centigrade.
References Cited (Backward Citations)
US4621277A
Cited
US5093710A
Cited
US5043300A
Cited
US5188979A
Cited
US5446824A
Cited
US5444026A
Cited
US5286676A
Cited
US5254499A
Cited
US5416045A
Cited
US5593511A
Cited
US5545592A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-31 | 2002-03-02 | 2002-09-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-31 | 2006-03-02 | 2006-09-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-31 | 2010-03-02 | 2010-09-01 | $7700.00 | Window Closed / Lapsed |