US5796116A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin-film semiconductor device including a semiconductor film with high field-effect mobility
Assignee: Sharp Corp
•
Filing: 1995-07-25
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Granted: 1998-08-18
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Expires: 2015-07-25
Abstract
Abstract A thin film transistor includes: a substrate; a gate electrode, a source electrode and a drain electrode formed above the substrate; and an insulating film and a semiconductor film formed between the gate electrode, and the source electrode and the drain electrode, wherein the semiconductor film includes an i-type silicon film, and a portion or the semiconductor film within 50 nm from the insulating film has a microcrystalline structure having a conductivity of 5x10-10 S/cm or more.
Inventors
- 👤 Yukihiko Nakata
- 👤 Masaki Fujihara
- 👤 Masahiro Date
- 👤 Takuya Matsuo
- 👤 Michiteru Ayukawa
- 👤 Takashi Itoga
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:17
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/6704; H10D30/6723; H10D30/673; H10D30/6731; H10D30/6732; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3241; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/40; H10P14/416
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
84 words
A thin film transistor comprising: a substrate; a semiconductor film formed above the substrate; an insulating film formed on the semiconductor substrate; a gate electrode formed on the insulating film; and a source and a drain electrode connected to the semiconductor film, wherein at least a portion of the semiconductor film has a microcrystalline structure with a dark conductivity in a range of about 5×10 -10 S/cm to about 1×10 -7 S/cm, and wherein the semiconductor film includes a channel portion of i-type silicon.
Claim 2
Dependent Claim
84 words
A thin film transistor comprising: a substrate; a semiconductor film formed above the substrate; an insulating film formed on the semiconductor substrate; a gate electrode formed on the insulating film; and a source and a drain electrode connected to the semiconductor film, wherein at least a portion of the semiconductor film has a microcrystalline structure with a dark conductivity in a range of about 5×10 -10 S/cm to about 1×10 -7 S/cm, and wherein the semiconductor film includes a channel portion of i-type silicon.
Claim 3
Dependent Claim
34 words
A thin film transistor according to claim 1, wherein the semiconductor film includes a pair of doped regions arranged to sandwich the channel portion, and the doped regions include impurities doped by ion doping.
Claim 4
Dependent Claim
31 words
A thin film transistor according to claim 1, wherein an amount of bound hydrogen in the portion having the microcrystalline structure is in the range of about 7% to about 10%.
Claim 5
Dependent Claim
30 words
A thin film transistor according to claim 1, wherein a crystalline volume fraction in the portion having the microcrystalline structure is in the range of about 8% to about 70%.
Claim 6
Dependent Claim
35 words
A thin film transistor according to claim 1, wherein the portion having the microcrystalline structure has an absorption coefficient for light with a wavelength of 400 nm of about 3.7×10 5 cm -1 or less.
Claim 7
Dependent Claim
30 words
A thin film transistor according to claim 1, wherein, in the portion having the microcrystalline structure, a {111} axis of a plurality of crystalline grains is perpendicular to the substrate.
Claim 8
Dependent Claim
31 words
A thin film transistor according to claim 1, wherein the semiconductor film includes a film made of at least one of silicon, silicon germanium, silicon carbon, silicon nitride and silicon oxide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-17 | 2002-02-16 | 2002-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-17 | 2006-02-16 | 2006-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-17 | 2010-02-16 | 2010-08-18 | $7700.00 | Window Closed / Lapsed |