US4835059A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film conductor which contains silicon and germanium as major components and method of manufacturing the same
Assignee: Anritsu Corp
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Filing: 1986-08-12
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Granted: 1989-05-30
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Expires: 2006-08-12
Abstract
Abstract The invention relates to a thin film conductor which has a composition containing silicon and germanium as major components and has a structure in which both amorphous and microcrystalline phases are present, and a method of manufacturing the same by a CVD method. The resultant thin film conductor has characteristics, such as a high dark conductivity, a large gauge factor, a small temperature coefficient of the dark conductivity, a large thermoelectric power, and the like, and is used as a material for microelectronic devices having a sensor function.
Inventors
- 👤 Setsuo Kodato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:37
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/20; G01L1/22; G01L1/2287; G01L1/2293; H; H01; H01B; H01B1/00; H01B1/04; H10; H10D; H10D62/00; H10D62/40; H10D62/402; H10D62/80; H10D62/83; Y; Y10; Y10S; Y10S257/00; Y10S257/93
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
102 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present, wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases and has a dark conductivity of at least 10 S·cm -1 , a thermoelectric power of at least 10 μV/K, and a temperature coefficient of electrical conductivity of not more than 1%/K whereby said thin film is suitable for use as ohmic electrode material of a semiconductor device, for use as thin film resistor material and likewise for use as a thermoelectric couple.
Claim 2
Dependent Claim
102 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present, wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases and has a dark conductivity of at least 10 S·cm -1 , a thermoelectric power of at least 10 μV/K, and a temperature coefficient of electrical conductivity of not more than 1%/K whereby said thin film is suitable for use as ohmic electrode material of a semiconductor device, for use as thin film resistor material and likewise for use as a thermoelectric couple.
Claim 3
Dependent Claim
33 words
A thin film conductor according to claim 1, wherein said thin film contains not more than 100 parts by weight (excluding zero) of silicon with respect to 1 part by weight of germanium.
Claim 4
Dependent Claim
33 words
A thin film conductor according to claim 1, wherein said thin film has a dark conductivity of not less than 100 S·cm -1 and a thermoelectric power of not less than 100 μV/K.
Claim 5
Dependent Claim
32 words
A thin film conductor according to claim 1, wherein 10 to 90% of microcrystalline phase is contained in said thin film and has an average grain size of 5 to 50 nm.
Claim 6
Dependent Claim
32 words
A thin film conductor according to claim 1, wherein 30 to 90% of microcrystalline phase is contained in said thin film, and has an average grain size of 5 to 50 nm.
Claim 7
Dependent Claim
35 words
A thin film conductor according to claim 1, wherein said thin film is supported on an insulating substrate, and a pair of electrodes spaced apart on said film are provided for making electrical connections thereto.
Claim 8
Dependent Claim
33 words
A thin film conductor according to claim 6, wherein said insulating substrate comprises a silicon oxide thin film superposed on an aluminum oxide thin film which is located on a supporting glass substrate.
Claim 9
Dependent Claim
31 words
A thin film conductor according to claim 1, wherein said thin film has a dark conductivity of not less than 100 S·cm -1 and a gauge ratio of 4 to 10.
Claim 10
Dependent Claim
83 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases, has a dark conductivity of at least 10 S·cm -1 , has a gauge factor of at least 4 and a temperature coefficient of electrical conductivity of not more than 1%/K, whereby said thin film is suitable for use as a strain gauge material.
Claim 11
Dependent Claim
83 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases, has a dark conductivity of at least 10 S·cm -1 , has a gauge factor of at least 4 and a temperature coefficient of electrical conductivity of not more than 1%/K, whereby said thin film is suitable for use as a strain gauge material.
Claim 12
Dependent Claim
34 words
A thin film conductor according to claim 9, wherein said thin film has a dark conductivity of not less than 100 S·cm -1 and a gauge factor in the range from 4 to 10.
Claim 13
Dependent Claim
79 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present, wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases, has a dark conductivity of at least 10 S·cm -1 , has a gauge factor of at least 4 and a temperature coefficient of electrical conductivity of not more than 1%/K, and a thermoelectric power of at least 10 μV/K.
Claim 14
Dependent Claim
79 words
A thin film conductor having a composition containing silicon and germanium as major components and a structure in which both amorphous and microcrystalline phases are present, wherein said thin film comprises germanium-germanium, silicon-germanium and silicon-silicon bonds in said phases, has a dark conductivity of at least 10 S·cm -1 , has a gauge factor of at least 4 and a temperature coefficient of electrical conductivity of not more than 1%/K, and a thermoelectric power of at least 10 μV/K.
References Cited (Backward Citations)
US3771026A
Cited
FR2390004A1
Cited
JPS5433041A
Cited
JPS5515561A
Cited
GB2038086A
Cited
US4409134A
Cited
US4398343A
Cited
EP0042773A1
Cited
US4344984A
Cited
US4498092A
Cited
GB2086135A
Cited
EP0061388A2
Cited
US4435445A
Cited
JPS60210826A
Cited
EP0161556A2
Cited
US4609771A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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