EP0061388A2
Expired / Lapsed
EP
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Binary germanium-silicon interconnect structure for integrated circuits
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-03-12
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Granted: —
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Expires: 2002-03-12
Abstract
Abstract An interconnect structure for use in integrated circuits comprises a germanium-silicon binary alloy. Such an alloy is deposited on the semiconductor wafer from the co-deposition of germanium and silicon using chemical vapor deposition techniques of a type commonly used in the semiconductor industry. The resulting alloy can be oxidized, selectively removed and doped with selected impurities to provide a conductive lead pattern of a desired shape on the surface of a wafer.
Inventors
- 👤 William I. Lehrer
- 👤 Bruce E. Deal
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 07:30
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W20/01; H10W20/031; H10W20/064; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/929; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528; Y10T428/12674
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
14 words
An interconnect structure for use in integrated circuits characterized by a germanium-silicon binary alloy.
Claim 2
Dependent Claim
14 words
An interconnect structure for use in integrated circuits characterized by a germanium-silicon binary alloy.
Claim 3
Dependent Claim
23 words
Structure as in Claim 1 characterized in that said binary alloy system is selectively doped with a selected impurity to lower its resistivity.
Claim 4
Dependent Claim
12 words
Structure as in Claim 2 characterized in that said impurity comprises phosphorus.
Claim 5
Dependent Claim
16 words
Structure as in Claim 3 characterized in that said phosphorus is saturated in said germanium-silicon alloy.
Claim 6
Independent Claim
61 words
The method of forming a conductive interconnect structure on a semiconductor wafer characterized by: forming a binary alloy of germanium and silicon on the surface of the wafer; placing a selected impurity in said binary alloy thereby to lower its resistivity to a selected value; and forming said binary alloy into a selected lead pattern on the surface of said wafer.
Claim 7
Independent Claim
61 words
The method of forming a conductive interconnect structure on a semiconductor wafer characterized by: forming a binary alloy of germanium and silicon on the surface of the wafer; placing a selected impurity in said binary alloy thereby to lower its resistivity to a selected value; and forming said binary alloy into a selected lead pattern on the surface of said wafer.
Claim 8
Dependent Claim
48 words
The method of Claim 5 characterized in that said step of forming said binary alloy comprises the step of: heating said semiconductor wafer to a temperature of approximately 600°C to 625°C; and depositing from a mixed germane and silane source gas, a binary alloy of germanium and silicon.
Claim 9
Dependent Claim
65 words
The method of Claim 5 or 6 characterized in the step of forming said binary alloy into a selected lead pattern comprises: oxidizing selected portion of said binary alloy; and removing the oxidized portions of said binary alloy and the remaining germanium thereby to leave on said wafer in the form of a selected lead pattern unoxidized portions of said germanium and silicon binary alloy.
Claim 10
Dependent Claim
66 words
The method of Claim 6 or 7 characterized in that said step of depositing said binary alloy comprises heating said semiconductor wafer to a temperature of 600°C to 625 0 C and flowing germane and silane together with nitrogen at selected rates through a chemical vapor deposition reactor thereby to deposit a binary alloy of silicon and germanium to a selected thickness on said semiconductor wafer.
Claim 11
Dependent Claim
32 words
The method of Claim 8 characterized in that said step of forming said germanium-silicon binary alloy comprises in addition, doping said germanium-silicon binary alloy with a selected dopant to a selected concentration.
Claim 12
Dependent Claim
13 words
The method of Claim 9 characterized in that said selected dopant comprises phosphorus.
Claim 13
Dependent Claim
33 words
The method of Claim 10 characterized in that said phosphorus is doped to a concentration such that the resistivity of said binary alloy of germanium and silicon is less than 10 4 ohms-cm.
References Cited (Backward Citations)
No citation records indexed.
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