Thin film semiconductor device

Claim 2

A photoelectric conversion device comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided through a gate insulating layer on said gate electrode; an ohmic layer in contact with said thin film semiconductor layer provided with a gap therein; source and drain electrodes provided in contact with said ohmic layer; and an insulating protective layer provided at least corresponding to the gap on said thin film semiconductor layer, wherein said thin film semiconductor layer at the gap is a light-receiving region, and said protective layer includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction.

Claim 3

A device according to claim 1, further comprising a means for controlling a voltage of said gate electrode to compensate thermal characteristics of a photocurrent.

Claim 4

A thin film semiconductor apparatus comprising: a plurality of photoelectric conversion devices each comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching an insulating layer therebetween; first and second ohmic layers separated from each other to form a gap in contact with said thin film semiconductor layer; source and drain electrodes in contact with said first and second ohmic layers, respectively; an insulating protective layer on said thin film semiconductor layer corresponding to the gap, and wherein said insulating protective layer includes an impurity identical to one capable of controlling a conductivity type of said thin film semiconductor layer into p-type conductivity for forming an energy band profile so as to collect a major carrier in said semiconductor layer in an inner direction; a bit or block including said photoelectric conversion devices as a constructional element; and means for applying a voltage for maintaining a gate voltage so as to compensate an output characteristic of photocurrent outputted from said photoelectric conversion device for each said bit or block.

Claim 5

A thin film semiconductor apparatus comprising: a plurality of photoelectric conversion devices each comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching an insulating layer therebetween; first and second ohmic layers separated from each other to form a gap in contact with said thin film semiconductor layer; source and drain electrodes in contact with said first and second ohmic layers, respectively; an insulating protective layer on said thin film semiconductor layer corresponding to the gap, and wherein said insulating protective layer includes an impurity identical to one capable of controlling a conductivity type of said thin film semiconductor layer into p-type conductivity for forming an energy band profile so as to collect a major carrier in said semiconductor layer in an inner direction; a bit or block including said photoelectric conversion devices as a constructional element; and means for applying a voltage for maintaining a gate voltage so as to compensate an output characteristic of photocurrent outputted from said photoelectric conversion device for each said bit or block.

Claim 6

A device according to claim 1, wherein said impurity is a material identical to one capable of controlling a conductivity type of said thin film semiconductor layer into p-type conductivity.

Claim 7

A device according to claim 1, wherein said protective layer includes a p-type impurity.

Claim 8

A thin film semiconductor device comprising: a support; a gate electrode provided on said support; a gate insulating layer on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; first and second ohmic layers separated from each other and in contact with said thin film semiconductor to form a gap therebetween; source and drain electrodes provided in contact with said first and second ohmic layers, respectively; and an insulating protective layer provided on said thin film semiconductor layer at the gap, wherein said protective layer includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction.

Claim 9

A thin film semiconductor device comprising: a support; a gate electrode provided on said support; a gate insulating layer on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; first and second ohmic layers separated from each other and in contact with said thin film semiconductor to form a gap therebetween; source and drain electrodes provided in contact with said first and second ohmic layers, respectively; and an insulating protective layer provided on said thin film semiconductor layer at the gap, wherein said protective layer includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction.

Claim 10

A photoelectric transducer apparatus comprising: a support; a gate electrode provided on said support; a gate insulating layer on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; an ohmic layer in contact with said semiconductor layer with a gap therein; source and drain electrodes in contact with said ohmic layer; an insulating protective layer on said thin film semiconductor layer at said gap, said gap having a photoreceiving region; wherein the insulating protective layer contacting said thin film semiconductor layer within said photoreceiving region includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer into a p-type conductivity for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction; and means for applying a voltage to said gate electrode for improving and making uniform output characteristics of a photocurrent outputted from said photoelectric transducer apparatus.

Claim 11

A photoelectric transducer apparatus comprising: a support; a gate electrode provided on said support; a gate insulating layer on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; an ohmic layer in contact with said semiconductor layer with a gap therein; source and drain electrodes in contact with said ohmic layer; an insulating protective layer on said thin film semiconductor layer at said gap, said gap having a photoreceiving region; wherein the insulating protective layer contacting said thin film semiconductor layer within said photoreceiving region includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer into a p-type conductivity for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction; and means for applying a voltage to said gate electrode for improving and making uniform output characteristics of a photocurrent outputted from said photoelectric transducer apparatus.

Claim 12

A thin film semiconductor device comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching a gate insulating layer therebetween; an ohmic layer in contact with said thin film semiconductor layer; source and drain electrodes in contact with said ohmic layer; an insulating protective layer on said thin film semiconductor layer at a section between said source and drain electrodes, wherein said protective layer at said semiconductor layer includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer into a p-type conductivity; and means for applying a voltage for controlling a voltage applied to said gate electrode.

Claim 13

A thin film semiconductor device comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching a gate insulating layer therebetween; an ohmic layer in contact with said thin film semiconductor layer; source and drain electrodes in contact with said ohmic layer; an insulating protective layer on said thin film semiconductor layer at a section between said source and drain electrodes, wherein said protective layer at said semiconductor layer includes an impurity identical to one capable of controlling a conductivity of said thin film semiconductor layer into a p-type conductivity; and means for applying a voltage for controlling a voltage applied to said gate electrode.

Claim 14

A device according to claim 1, wherein said protective layer includes nitrogen and silicon atoms.

Claim 15

A device according to claim 6, wherein said protective layer includes nitrogen and silicon atoms.

Claim 16

A photoelectric conversion device comprising: a support; a gate electrode provided on said support; a single or substantially single amorphous silicon thin film semiconductor layer provided through an insulating gate layer on said gate electrode; an ohmic layer in contact with said thin film semiconductor layer; and source and drain electrodes in contact with said ohmic layer; wherein said thin film semiconductor layer has a photoreceiving channel region between said source and drain electrodes, and at least a surface side of said thin film semiconductor layer at the photoreceiving region is depleted with regard to an electron; and means for applying a voltage to said gate electrode of said photoelectric conversion device.

Claim 17

A photoelectric conversion device comprising: a support; a gate electrode provided on said support; a single or substantially single amorphous silicon thin film semiconductor layer provided through an insulating gate layer on said gate electrode; an ohmic layer in contact with said thin film semiconductor layer; and source and drain electrodes in contact with said ohmic layer; wherein said thin film semiconductor layer has a photoreceiving channel region between said source and drain electrodes, and at least a surface side of said thin film semiconductor layer at the photoreceiving region is depleted with regard to an electron; and means for applying a voltage to said gate electrode of said photoelectric conversion device.

Claim 18

A thin film semiconductor device comprising a thin film transistor type photoelectric conversion device and a thin film transistor on a support, wherein said thin film transistor type photoelectric conversion device comprises; a gate electrode provided on said support; a gate insulating layer provided on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; an ohmic layer provided in contact with said thin film semiconductor layer with a gap therein; source and drain electrodes provided in contact with said ohmic layer; and an insulating protective layer provided on said thin film semiconductor layer at the gap; wherein said protective layer includes an impurity identical to one capable of controlling a conductivity type of said thin film semiconductor layer for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction.

Claim 19

A thin film semiconductor device comprising a thin film transistor type photoelectric conversion device and a thin film transistor on a support, wherein said thin film transistor type photoelectric conversion device comprises; a gate electrode provided on said support; a gate insulating layer provided on said gate electrode; a thin film semiconductor layer provided through said gate insulating layer on said gate electrode; an ohmic layer provided in contact with said thin film semiconductor layer with a gap therein; source and drain electrodes provided in contact with said ohmic layer; and an insulating protective layer provided on said thin film semiconductor layer at the gap; wherein said protective layer includes an impurity identical to one capable of controlling a conductivity type of said thin film semiconductor layer for forming an energy band profile so as to collect a major carrier in said thin film semiconductor layer in an inner direction.

Claim 20

A device according to claim 12, wherein said thin film semiconductor device further comprises means for supplying voltage to be applied to said gate of said photoelectric conversion device.

Claim 21

A device according to claim 12, wherein said thin film semiconductor device further comprises means for supplying voltage to be applied to a gate electrode of said thin film transistor.

Claim 22

A device according to claim 12, wherein said protective layer includes a silicon atom and a nitrogen atom.

Claim 23

A device according to claim 12, wherein said impurity is an element identical to one capable of controlling a conductivity of said thin film semiconductor into p-type conductivity.

Claim 24

A device according to claim 16, wherein said element is selected from elements in group III of the Periodic Table.

Claim 25

A device according to claim 17, wherein said element is boron.

Claim 26

A device according to claim 12, wherein said thin film semiconductor layer is amorphous silicon.

Claim 27

A device according to claim 12, wherein said thin film semiconductor device further comprises a capacitor.

Claim 28

A device according to claim 12, wherein a plurality of said photoelectric conversion devices are at least provided.

Claim 29

A device according to claim 12, wherein a plurality of said thin film transistors are at least provided.

Claim 30

A device according to claim 12, wherein said thin film transistor is a switching means for transferring a signal of said photoelectric conversion device.

Claim 31

A device according to claim 12, wherein said thin film semiconductor device has a capacitor, and said thin film transistor is a switching means for refreshment of said capacitor.

Claim 32

A photoelectric conversion device comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching a gate insulating layer therebetween; an ohmic layer with a gap provided therein in contact with said thin film semiconductor layer; source and drain electrodes provided in contact with said ohmic layer; and an insulating protective layer provided correspondingly, at least, to the gap on said thin film semiconductor layer, wherein in order to form an energy profile for collecting a majority carrier in said semiconductor layer in an inner direction, said insulating protective layer includes an impurity capable of controlling a conductivity of said thin film semiconductor layer.

Claim 33

A photoelectric conversion device comprising: a support; a gate electrode provided on said support; a thin film semiconductor layer provided on said gate electrode sandwiching a gate insulating layer therebetween; an ohmic layer with a gap provided therein in contact with said thin film semiconductor layer; source and drain electrodes provided in contact with said ohmic layer; and an insulating protective layer provided correspondingly, at least, to the gap on said thin film semiconductor layer, wherein in order to form an energy profile for collecting a majority carrier in said semiconductor layer in an inner direction, said insulating protective layer includes an impurity capable of controlling a conductivity of said thin film semiconductor layer.