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US5367180A
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US
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Thin-film semiconductor device with field plate
Assignee: Fujifilm Business Innovation Corp
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Filing: 1993-04-09
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Granted: 1994-11-22
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Expires: 2013-04-09
Abstract
Abstract The invention is based on a thin-film semiconductor FET device. A field plate electrode for producing an electric field is formed on a channel-protecting film above the end of the gate electrode that is on the side of an offset region. Stable transistor characteristics can be maintained for a long time with the field plate electrode voltage set to a low value. The drain electrode is coated with a film of an anticorrosion metal. Where an integrated circuit with a high device density is fabricated from semiconductor devices of this construction, the drain electrodes are effectively prevented from being corroded.
Inventors
- 👤 Ichiro Asai
- 👤 Takao Tomono
- 👤 Takeshi Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:38
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/64; H10D30/66; H10D30/668; H10D30/6717; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6734; H10D30/6737; H10D30/674; H10D30/6741; H10D30/6743; H10D64/00; H10D64/111
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
166 words
A thin-film semiconductor device comprising: an insulating substrate; a gate electrode having first and second ends on the substrate; a gate-insulating film overlaying the gate electrode; a semiconductor layer on the gate-insulating film having a first portion overlaying the gate electrode and a second portion; an inorganic channel-protecting film overlaying the semiconductor layer; a source electrode connected with the first portion of the semiconductor layer and overlaying the first end of the gate electrode; a drain electrode connected with the second portion of the semiconductor layer, wherein the gate electrode is disposed closer to the source electrode than to the drain electrode; an offset region in the semiconductor layer between the drain electrode and the second end of the gate electrode; a field plate electrode adapted to produce an electric field, the field plate electrode being directly disposed on the channel-protecting film and overlaying the second end of the gate electrode; and an organic interlayer insulating film overlaying the channel-protecting film and the field plate electrode.
Claim 2
Dependent Claim
166 words
A thin-film semiconductor device comprising: an insulating substrate; a gate electrode having first and second ends on the substrate; a gate-insulating film overlaying the gate electrode; a semiconductor layer on the gate-insulating film having a first portion overlaying the gate electrode and a second portion; an inorganic channel-protecting film overlaying the semiconductor layer; a source electrode connected with the first portion of the semiconductor layer and overlaying the first end of the gate electrode; a drain electrode connected with the second portion of the semiconductor layer, wherein the gate electrode is disposed closer to the source electrode than to the drain electrode; an offset region in the semiconductor layer between the drain electrode and the second end of the gate electrode; a field plate electrode adapted to produce an electric field, the field plate electrode being directly disposed on the channel-protecting film and overlaying the second end of the gate electrode; and an organic interlayer insulating film overlaying the channel-protecting film and the field plate electrode.
Claim 3
Dependent Claim
17 words
The thin-film semiconductor device according to claim 1, wherein the channel-protecting film is comprised of silicon nitride.
Claim 4
Dependent Claim
18 words
The thin-film semiconductor device according to claim 1, wherein the interlayer insulating film is comprised of polyimide resin.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-21 | 1998-05-23 | 1998-11-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-21 | 2002-05-23 | 2002-11-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-21 | 2006-05-23 | 2006-11-22 | $7700.00 | Window Closed / Lapsed |