US4322253A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
Assignee: RCA Corp
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Filing: 1980-04-30
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Granted: 1982-03-30
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Expires: 2000-04-30
Abstract
Abstract A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.
Inventors
- 👤 Jacques I. Pankove
- 👤 Chung P. Wu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 06:45
CPC Classifications
C; C30; C30B; C30B1/00; C30B1/02; C30B1/023; H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F71/00; H10F71/121; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3806; H10P14/3808; H10P14/3816; H10P34/00; H10P34/40; H10P34/42; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
104 words
A method of fabricating a single crystalline silicon material having a band gap energy greater than 1.1 eV by the incorporation of atomic hydrogen therein, comprising: converting a part of a body of single crystalline silicon adjacent a surface into an amorphous region of graded crystallinity; exposing said amorphous region to atomic hydrogen whereby an integral region of hydrogenated amorphous silicon of graded crystallinity is formed adjacent said crystalline body; and annealing said hydrogenated amorphous silicon region with a laser for a sufficient time and at a sufficient power density to convert said region into single crystalline silicon without substantial out-gasing of the hydrogen.
Claim 2
Independent Claim
104 words
A method of fabricating a single crystalline silicon material having a band gap energy greater than 1.1 eV by the incorporation of atomic hydrogen therein, comprising: converting a part of a body of single crystalline silicon adjacent a surface into an amorphous region of graded crystallinity; exposing said amorphous region to atomic hydrogen whereby an integral region of hydrogenated amorphous silicon of graded crystallinity is formed adjacent said crystalline body; and annealing said hydrogenated amorphous silicon region with a laser for a sufficient time and at a sufficient power density to convert said region into single crystalline silicon without substantial out-gasing of the hydrogen.
Claim 3
Dependent Claim
15 words
The method according to claim 1 wherein the amorphous region is formed by ion implantation.
Claim 4
Dependent Claim
26 words
The method according to claim 2 wherein the ion implantation is selected from the group consisting of phosphorous atoms, boron atoms, arsenic atoms, and silicon atoms.
Claim 5
Dependent Claim
25 words
The method according to claim 2 wherein said body is exposed to a Q switched neodymium glass laser at a wavelength of about 1.06 micrometers.
Claim 6
Dependent Claim
28 words
The method according to claim 4 wherein the pulse duration is about 25 nanoseconds and the power density is about 45 to about 60 megawatts per square centimeter.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-03-29 | 1985-09-28 | 1986-03-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-03-29 | 1989-09-28 | 1990-03-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-03-29 | 1993-09-28 | 1994-03-30 | $7700.00 | Window Closed / Lapsed |