US5017308A
Expired / Lapsed
US
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Silicon thin film and method of producing the same
Assignee: Tonen General Sekiyu KK
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Filing: 1989-07-11
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Granted: 1991-05-21
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Expires: 2009-07-11
Abstract
Abstract A silicon thin film is composed of primarily silicon atoms, 0 to 8 atm % hydrogen, at least one element selected from the group including fluorine, chlorine, bromine and iodine, and an impurity element, wherein about 80 to 100% of microcrystalline grains are interspersed in an amorphous phase. The thin film is produced by deposition on a substrate in a plasma atmosphere using as a raw material gas silane (SiH4) or halogenated silane (SiHo-3X4-1) wherein X represents a halogen or a combination of two or more halogens, and a dopant gas mixed with the raw material gas. The method comprises the steps of: (1) diluting the mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1, to control the film deposition rate to produce a layer including mixed crystalline and amorphous substances; and (2) applying an electric power to provide a plasma discharge power density of from 0.1 to about 0.5 W/cm2, at a reaction pressure of 5 to 10 torr.
Inventors
- 👤 Shigeru Iijima
- 👤 Kazunobu Tanaka
- 👤 Akihisa Matsuda
- 👤 Mitsuo Matsumura
- 👤 Hideo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 14:51
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10D62/80; H10D62/83; H10D62/834; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3451; H10P14/3452; H10P14/3454; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
89 words
A substrate and a silicon thin film deposited n said substrate, said thin film having an electrical conductivity of more than 5×10 0 Ω -1 cm -1 for a P type film and more than 1×10 2 Ω -1 cm -1 for an N type film, said film comprising primarily silicon atoms, 2 to 5 atm % of hydrogen, fluorine and a dopant impurity element, wherein at least about 80%, but less than 100%, of the film volume comprises microcrystalline grains, which grains are interspersed in an amorphous phase.
Claim 2
Dependent Claim
89 words
A substrate and a silicon thin film deposited n said substrate, said thin film having an electrical conductivity of more than 5×10 0 Ω -1 cm -1 for a P type film and more than 1×10 2 Ω -1 cm -1 for an N type film, said film comprising primarily silicon atoms, 2 to 5 atm % of hydrogen, fluorine and a dopant impurity element, wherein at least about 80%, but less than 100%, of the film volume comprises microcrystalline grains, which grains are interspersed in an amorphous phase.
Claim 3
Dependent Claim
19 words
The combination according to claim 1, wherein the optical band gap of said film is higher than 1.3 eV.
Claim 4
Dependent Claim
19 words
The combination according to claim 1, wherein the average crystallite size is about 30 Å to about 500 Å.
Claim 5
Dependent Claim
19 words
The combination according to claim 3, wherein the average crystallite size is about 150 Å to about 500 Å.
Claim 6
Dependent Claim
24 words
The combination according to claim 1, wherein the dopant impurity element is at least one element selected from Group V of the Periodic Table.
Claim 7
Dependent Claim
24 words
The combination according to claim 1, wherein the dopant impurity element is at least one element selected from Group III of the Periodic Table.
Claim 8
Dependent Claim
25 words
The combination according to claim 1, wherein the activation energy on the basis of the electrical conductivity of said film is below about 0.2 eV.
Claim 9
Dependent Claim
137 words
Method of preparing a silicon thin film on a substrate in a plasma atmosphere using as a raw material gas silane (SiH 4 ), fluorinated silane (SiH 0-3 F 4-1 ), or a combination thereof, and a dopant gas mixed with the raw material gas, said method comprising: diluting said mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1; and applying an electric power to provide a plasma discharge power density of about 0.1 to about 0.5 W /cm 2 at a reaction pressure of 5 to 10 torr, whereby the produced film contains 2 to 5 atm % of hydrogen, and at least about 80%, but less than 100%, of the film volume comprises microcrystalline grains, which grains are interspersed in an amorphous phase.
Claim 10
Dependent Claim
137 words
Method of preparing a silicon thin film on a substrate in a plasma atmosphere using as a raw material gas silane (SiH 4 ), fluorinated silane (SiH 0-3 F 4-1 ), or a combination thereof, and a dopant gas mixed with the raw material gas, said method comprising: diluting said mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1; and applying an electric power to provide a plasma discharge power density of about 0.1 to about 0.5 W /cm 2 at a reaction pressure of 5 to 10 torr, whereby the produced film contains 2 to 5 atm % of hydrogen, and at least about 80%, but less than 100%, of the film volume comprises microcrystalline grains, which grains are interspersed in an amorphous phase.
Claim 11
Dependent Claim
39 words
Method according to claim 8, wherein said dopant gas includes a gas comprising at least one element selected from Group III of the Periodic Table, or compounds thereof, and the resulting silicon thin film is of the P type.
Claim 12
Dependent Claim
39 words
Method according to claim 8, wherein said dopant gas includes a gas comprising at least one element selected from Group V of the Periodic Table, or compounds thereof, and the resulting silicon thin film is of the N type.
Claim 13
Dependent Claim
63 words
A substrate and a silicon thin film deposited on said substrate, said film comprising primarily silicon atoms, 2 to 5 atm % of hydrogen, and fluorine, wherein at least about 80%, but less than 100% of the film volume comprises microcrystalline grains having an average crystallite size from about 30 Å to about 500 Å, which grains are interspersed in an amorphous phase.
Claim 14
Dependent Claim
63 words
A substrate and a silicon thin film deposited on said substrate, said film comprising primarily silicon atoms, 2 to 5 atm % of hydrogen, and fluorine, wherein at least about 80%, but less than 100% of the film volume comprises microcrystalline grains having an average crystallite size from about 30 Å to about 500 Å, which grains are interspersed in an amorphous phase.
Claim 15
Dependent Claim
19 words
The combination according to claim 11, wherein the average crystallite size is about 150 Å to about 500 Å.
Claim 16
Dependent Claim
124 words
Method of preparing a silicon thin film on a substrate in a plasma atmosphere using as a raw material gas silane (SiH 4 ), fluorinated silane (SiH 0-3 F 4-1 ), or a combination thereof, said method comprising: diluting said mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1; and applying an electric power to provide a plasma discharge power density of about 0.1 to about 0.5 W/cm 2 at a reaction pressure of 50 to 10 torr, whereby the produced film contains 2 to 5 atm % of hydrogen and at least about 80%, but less than 100% by volume of microcrystalline grains, which grains are interspersed in an amorphous phase.
Claim 17
Dependent Claim
124 words
Method of preparing a silicon thin film on a substrate in a plasma atmosphere using as a raw material gas silane (SiH 4 ), fluorinated silane (SiH 0-3 F 4-1 ), or a combination thereof, said method comprising: diluting said mixed gas with hydrogen in a ratio of the diluting gas to the raw material gas of from 50:1 to 100:1; and applying an electric power to provide a plasma discharge power density of about 0.1 to about 0.5 W/cm 2 at a reaction pressure of 50 to 10 torr, whereby the produced film contains 2 to 5 atm % of hydrogen and at least about 80%, but less than 100% by volume of microcrystalline grains, which grains are interspersed in an amorphous phase.
References Cited (Backward Citations)
US4409134A
Cited
US4433202A
Cited
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