Patent US5767534A successfully refreshed from Google Patents.
US5767534A
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Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device
Assignee: 3M Innovative Properties Co
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Filing: 1997-02-24
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Granted: 1998-06-16
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Expires: 2017-02-24
Abstract
Abstract A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact.
Inventors
- 👤 Fen-Ren Chien
- 👤 Michael A. Haase
- 👤 Thomas J. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:45
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/84; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; H10H20/83; H10H20/832; H01S5/04; H01S5/042; H01S5/0421; H10H20/81; H10H20/822; H10H20/823
Claims Analysis
Total Claims: 50
Claim 1
Independent Claim
70 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer includes ZnTe.
Claim 2
Dependent Claim
70 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer includes ZnTe.
Claim 3
Dependent Claim
12 words
The semiconductor device of claim 1 wherein the ohmic contact includes BeTe.
Claim 4
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the passivation capping layer is electrically conductive.
Claim 5
Dependent Claim
18 words
The semiconductor device of claim 1 wherein the stack of semiconductor layers comprises a II-VI light emitting diode.
Claim 6
Dependent Claim
17 words
The semiconductor device of claim 1 wherein the stack of semiconductor layers comprises a II-VI laser diode.
Claim 7
Dependent Claim
13 words
The semiconductor device of claim 1 wherein the ohmic contact is doped p-type.
Claim 8
Dependent Claim
13 words
The semiconductor device of claim 1 wherein the ohmic contact is doped n-type.
Claim 9
Dependent Claim
15 words
The semiconductor device of claim 1 wherein the passivation capping layer is a p-type semiconductor.
Claim 10
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the passivation capping layer is doped n-type.
Claim 11
Dependent Claim
24 words
The semiconductor device of claim 1 wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
Claim 12
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the passivation capping layer comprises a metal.
Claim 13
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the stack forms a light emitting diode.
Claim 14
Dependent Claim
12 words
The semiconductor device of claim 1 wherein the stack forms a laser.
Claim 15
Dependent Claim
14 words
An optical data storage system including a semiconductor device in accordance with claim 1.
Claim 16
Dependent Claim
12 words
An electronic system including a semiconductor device in accordance with claim 1.
Claim 17
Dependent Claim
13 words
A optical communication device including a semiconductor device in accordance with claim 1.
Claim 18
Dependent Claim
71 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is doped p-type.
Claim 19
Dependent Claim
71 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is doped p-type.
Claim 20
Dependent Claim
12 words
The semiconductor device of claim 17 wherein the ohmic contact includes BeTe.
Claim 21
Dependent Claim
13 words
The semiconductor device of claim 17 wherein the passivation capping layer includes ZnTe.
Claim 22
Dependent Claim
18 words
The semiconductor device of claim 17 wherein the stack of semiconductor layers comprises a II-VI light emitting diode.
Claim 23
Dependent Claim
17 words
The semiconductor device of claim 17 wherein the stack of semiconductor layers comprises a II-VI laser diode.
Claim 24
Dependent Claim
13 words
The semiconductor device of claim 17 wherein the ohmic contact is doped p-type.
Claim 25
Dependent Claim
24 words
The semiconductor device of claim 17 wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
Claim 26
Dependent Claim
14 words
An optical data storage system including a semiconductor device in accordance with claim 17.
Claim 27
Dependent Claim
12 words
An electronic system including a semiconductor device in accordance with claim 17.
Claim 28
Dependent Claim
13 words
A optical communication device including a semiconductor device in accordance with claim 17.
Claim 29
Dependent Claim
71 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is doped n-type.
Claim 30
Dependent Claim
71 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is doped n-type.
Claim 31
Dependent Claim
12 words
The semiconductor device of claim 27 wherein the ohmic contact includes BeTe.
Claim 32
Dependent Claim
18 words
The semiconductor device of claim 27 wherein the stack of semiconductor layers comprises a II-VI light emitting diode.
Claim 33
Dependent Claim
17 words
The semiconductor device of claim 27 wherein the stack of semiconductor layers comprises a II-VI laser diode.
Claim 34
Dependent Claim
13 words
The semiconductor device of claim 27 wherein the ohmic contact is doped n-type.
Claim 35
Dependent Claim
24 words
The semiconductor device of claim 27 wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
Claim 36
Dependent Claim
14 words
An optical data storage system including a semiconductor device in accordance with claim 27.
Claim 37
Dependent Claim
12 words
An electronic system including a semiconductor device in accordance with claim 27.
Claim 38
Dependent Claim
13 words
A optical communication device including a semiconductor device in accordance with claim 27.
Claim 39
Dependent Claim
81 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
Claim 40
Dependent Claim
81 words
A semiconductor device, comprising: a stack of semiconductor layers; an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact, wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
Claim 41
Dependent Claim
12 words
The semiconductor device of claim 36 wherein the ohmic contact includes BeTe.
Claim 42
Dependent Claim
14 words
The semiconductor device of claim 36 wherein the passivation capping layer is electrically conductive.
Claim 43
Dependent Claim
18 words
The semiconductor device of claim 36 wherein the stack of semiconductor layers comprises a II-VI light emitting diode.
Claim 44
Dependent Claim
17 words
The semiconductor device of claim 36 wherein the stack of semiconductor layers comprises a II-VI laser diode.
Claim 45
Dependent Claim
13 words
The semiconductor device of claim 36 wherein the ohmic contact is doped p-type.
Claim 46
Dependent Claim
13 words
The semiconductor device of claim 36 wherein the ohmic contact is doped n-type.
Claim 47
Dependent Claim
14 words
The semiconductor device of claim 36 wherein the passivation capping layer is doped n-type.
Claim 48
Dependent Claim
14 words
An optical data storage system including a semiconductor device in accordance with claim 36.
Claim 49
Dependent Claim
12 words
An electronic system including a semiconductor device in accordance with claim 36.
Claim 50
Dependent Claim
13 words
A optical communication device including a semiconductor device in accordance with claim 36.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-06-15 | 2001-12-15 | 2002-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-06-15 | 2005-12-15 | 2006-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-06-15 | 2009-12-15 | 2010-06-16 | $7700.00 | Window Closed / Lapsed |