US5248631A
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Doping of iib-via semiconductors during molecular beam epitaxy using neutral free radicals
Assignee: University of Florida
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Filing: 1990-08-24
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Granted: 1993-09-28
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Expires: 2010-08-24
Abstract
Abstract A method and apparatus for enhanced doping of IIB-VIA semiconductors through the use of a free-radical source is described. The process involves the simultaneous production of beams of free-radicals together with group IIB molecules or atoms and group VIA molecules or atoms in a standard molecular beam epitaxy crystal growth system. These beams react on a substrate producing single crystal films of doped IIB-VIA semiconductors such as ZnSe:N, for example. The improved doping characteristics result from the high reactivity of radicals produced by the free-radical source with the surface of the growing crystal.
Inventors
- 👤 Robert M. Park
- 👤 James M. DePuydt
- 👤 Hwa Cheng
- 👤 Michael A. Haase
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:32
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H10H20/8232; H10P; H10P10/00; C; C30; C30B; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3231; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3431; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H01S5/30; H01S5/305; H01S5/3054; H01S5/3059; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
68 words
A method of doping IIB-VIA semiconductors comprising the steps of: injecting a group IIB source into a molecular beam epitaxy chamber; injecting a group VIA source into the molecular beam epitaxy chamber; generating neutral free radicals using an rf plasma discharge free-radical source; injecting free-radicals into the molecular beam epitaxy chamber from the rf plasma discharge free radical source; and growing a IIB-VIA semiconductor layer, doped with free-radicals.
Claim 2
Independent Claim
68 words
A method of doping IIB-VIA semiconductors comprising the steps of: injecting a group IIB source into a molecular beam epitaxy chamber; injecting a group VIA source into the molecular beam epitaxy chamber; generating neutral free radicals using an rf plasma discharge free-radical source; injecting free-radicals into the molecular beam epitaxy chamber from the rf plasma discharge free radical source; and growing a IIB-VIA semiconductor layer, doped with free-radicals.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 4
Dependent Claim
25 words
The method of claim 2 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 7
Dependent Claim
18 words
The method of claim 1 wherein growing a IIB-VIA semiconductor layer comprises growing a p-type IIB-VIA semiconductor layer.
Claim 8
Dependent Claim
15 words
The method of claim 1 including depositing subsequent layers to form a light emitting diode.
Claim 9
Dependent Claim
18 words
The method of claim 1 wherein growing a II semiconductor layer comprises growing a ternary IIB semiconductor layer.
Claim 10
Independent Claim
74 words
A method of producing an electromagnetic radiation transducer comprising: placing an n-type substrate in a molecular beam epitaxy growth chamber; growing an n-type semiconductor layer upon the n-type substrate; growing an IIB-VIA semiconductor layer upon the n-type semiconductor layer; and doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an rf plasma discharge free-radical source into the molecular beam epitaxy growth chamber.
Claim 11
Independent Claim
74 words
A method of producing an electromagnetic radiation transducer comprising: placing an n-type substrate in a molecular beam epitaxy growth chamber; growing an n-type semiconductor layer upon the n-type substrate; growing an IIB-VIA semiconductor layer upon the n-type semiconductor layer; and doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an rf plasma discharge free-radical source into the molecular beam epitaxy growth chamber.
Claim 12
Dependent Claim
13 words
The method of claim 9 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 13
Dependent Claim
25 words
The method of claim 10 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 14
Dependent Claim
12 words
The method of claim 10 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 15
Dependent Claim
12 words
The method of claim 9 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 16
Independent Claim
76 words
A method of producing an electromagnetic radiati emitting transducer comprising: placing a p-type substrate in a molecular beam epitaxy growth chamber; growing a IIB-VIA semiconductor layer upon the p-type substrate; doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an rf plasma discharge free-radical radical source into the molecular beam epitaxy growth chamber; and growing an n-type semiconductor layer upon the IIB-VIA semiconductor layer.
Claim 17
Independent Claim
76 words
A method of producing an electromagnetic radiati emitting transducer comprising: placing a p-type substrate in a molecular beam epitaxy growth chamber; growing a IIB-VIA semiconductor layer upon the p-type substrate; doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an rf plasma discharge free-radical radical source into the molecular beam epitaxy growth chamber; and growing an n-type semiconductor layer upon the IIB-VIA semiconductor layer.
Claim 18
Dependent Claim
13 words
The method of claim 14 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 19
Dependent Claim
25 words
The method of claim 15 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 20
Dependent Claim
12 words
The method of claim 14 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 21
Dependent Claim
12 words
The method of claim 14 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 22
Independent Claim
96 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using an rf plasma discharge free-radical source; injecting free radicals generated using the rf plasma discharge free-radical source into the molecular beam epitaxy growth chamber; and growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber, wherein the IIB-VIA semiconductor layer has a net donor to net acceptor ratio (N D /N A ) of less than or equal to 0.8.
Claim 23
Independent Claim
96 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using an rf plasma discharge free-radical source; injecting free radicals generated using the rf plasma discharge free-radical source into the molecular beam epitaxy growth chamber; and growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber, wherein the IIB-VIA semiconductor layer has a net donor to net acceptor ratio (N D /N A ) of less than or equal to 0.8.
Claim 24
Dependent Claim
23 words
The method of claim 1 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 25
Dependent Claim
23 words
The method of claim 9 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 26
Dependent Claim
23 words
The method of claim 14 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 27
Dependent Claim
24 words
The method of claim 19 wherein a growth rate for the p-type type ZnSe layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 28
Independent Claim
67 words
A method of doping IIB-VIA semiconductors comprising the steps of: injecting a group IIB source into a molecular beam epitaxy chamber; injecting a group VIA source into the molecular beam epitaxy chamber; generating neutral free radicals using an electron cyclotron resonance free-radical source; injecting free-radicals into the molecular beam epitaxy chamber from the electron cyclotron resonance free-radical source; and growing a IIB-VIA semiconductor layer, doped with free-radicals.
Claim 29
Independent Claim
67 words
A method of doping IIB-VIA semiconductors comprising the steps of: injecting a group IIB source into a molecular beam epitaxy chamber; injecting a group VIA source into the molecular beam epitaxy chamber; generating neutral free radicals using an electron cyclotron resonance free-radical source; injecting free-radicals into the molecular beam epitaxy chamber from the electron cyclotron resonance free-radical source; and growing a IIB-VIA semiconductor layer, doped with free-radicals.
Claim 30
Dependent Claim
13 words
The method of claim 24 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 31
Dependent Claim
25 words
The method of claim 25 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 32
Dependent Claim
12 words
The method of claim 24 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 33
Dependent Claim
12 words
The method of claim 24 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 34
Dependent Claim
17 words
The method claim 24 wherein growing a IIB-VIA semiconductor layer comprises growing a p-type IIB-VIA semiconductor layer.
Claim 35
Dependent Claim
15 words
The method of claim 24 including depositing subsequent layers to form a light emitting diode.
Claim 36
Dependent Claim
18 words
The method of claim 24 wherein growing a IIB-VIA semiconductor layer comprises growing a ternary IIB-VIA semiconductor layer.
Claim 37
Dependent Claim
23 words
The method of claim 24 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 38
Independent Claim
74 words
A method of producing an electromagnetic radiation transducer comprising: placing an n-type substrate in a molecular beam epitaxy growth chamber; growing an n-type semiconductor layer upon the n-type substrate; growing a IIB-VIA semiconductor layer upon the n-type semiconductor layer; and doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an electron cyclotron resonance free-radical source into the molecular beam epitaxy growth chamber.
Claim 39
Independent Claim
74 words
A method of producing an electromagnetic radiation transducer comprising: placing an n-type substrate in a molecular beam epitaxy growth chamber; growing an n-type semiconductor layer upon the n-type substrate; growing a IIB-VIA semiconductor layer upon the n-type semiconductor layer; and doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an electron cyclotron resonance free-radical source into the molecular beam epitaxy growth chamber.
Claim 40
Dependent Claim
13 words
The method of claim 33 wherein injecting free-radicals comprises injecting group VSA free-radicals.
Claim 41
Dependent Claim
25 words
The method of claim 34 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 42
Dependent Claim
12 words
The method of claim 34 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 43
Dependent Claim
12 words
The method of claim 33 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 44
Dependent Claim
23 words
The method of claim 56 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 45
Independent Claim
75 words
A method of producing an electromagnetic radiation emitting transducer comprising: placing a p-type substrate in a molecular beam epitaxy growth chamber; growing a IIB-VIA semiconductor layer upon the p-type substrate; doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an electron cyclotron resonance free-radical source into the molecular beam epitaxy growth chamber; and growing an n-type semiconductor layer upon the IIB-VIA semiconductor layer.
Claim 46
Independent Claim
75 words
A method of producing an electromagnetic radiation emitting transducer comprising: placing a p-type substrate in a molecular beam epitaxy growth chamber; growing a IIB-VIA semiconductor layer upon the p-type substrate; doping the IIB-VIA semiconductor layer p-type during the step of growing the IIB-VIA semiconductor layer by injecting neutral free-radicals generated using an electron cyclotron resonance free-radical source into the molecular beam epitaxy growth chamber; and growing an n-type semiconductor layer upon the IIB-VIA semiconductor layer.
Claim 47
Dependent Claim
13 words
The method of claim 39 wherein injecting free-radicals comprises injecting group VA free-radicals.
Claim 48
Dependent Claim
25 words
The method of claim 40 wherein injecting group VA free-radicals comprises injecting group VA free-radicals from the group consisting of nitrogen, arsenic, phosphorus and antimony.
Claim 49
Dependent Claim
12 words
The method of claim 39 wherein injecting free-radicals comprises injecting oxygen free-radicals.
Claim 50
Dependent Claim
12 words
The method of claim 39 wherein injecting free-radicals comprises injecting nitrogen free-radicals.
Claim 51
Dependent Claim
23 words
The method of claim 39 wherein a growth rate for the IIB-VIA semiconductor layer ranges from about 0.4 μm/h to about 2.0 μm/h.
Claim 52
Independent Claim
71 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using an electron cyclotron resonance free-radical source; injecting free radicals generated from the electron cyclotron resonance free-radicals source into the molecular beam epitaxy growth chamber; and growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber.
Claim 53
Independent Claim
71 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using an electron cyclotron resonance free-radical source; injecting free radicals generated from the electron cyclotron resonance free-radicals source into the molecular beam epitaxy growth chamber; and growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber.
Claim 54
Independent Claim
105 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using a free-radical source; injecting neutral free radicals generated using the free-radical source into the molecular beam epitaxy growth chamber; growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber; and wherein the neutral free radicals are of an energy level sufficiently low to yield a p-type ZnSe layer having a resistivity of less than 15 Ω-cm and a net acceptor concentration of more than 5×10 15 cm -3 .
Claim 55
Independent Claim
105 words
A method of producing p-type ZnSe comprising: injecting a Zn source in a molecular beam epitaxy growth chamber; injecting a Se source into the molecular beam epitaxy growth chamber; generating neutral free radicals using a free-radical source; injecting neutral free radicals generated using the free-radical source into the molecular beam epitaxy growth chamber; growing a p-type ZnSe layer in the molecular beam epitaxy growth chamber; and wherein the neutral free radicals are of an energy level sufficiently low to yield a p-type ZnSe layer having a resistivity of less than 15 Ω-cm and a net acceptor concentration of more than 5×10 15 cm -3 .
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| 3.5 Years (Year 4) | 1996-09-27 | 1997-03-29 | 1997-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-27 | 2001-03-29 | 2001-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-27 | 2005-03-29 | 2005-09-28 | $7700.00 | Window Closed / Lapsed |