US4735910A
Expired / Lapsed
US
⏱️ 0.0 years remaining
In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate
Assignee: Panasonic Holdings Corp
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Filing: 1986-09-12
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Granted: 1988-04-05
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Expires: 2006-09-12
Abstract
Abstract The present invention relates to a method of manufacturing semiconductors by as vacuum deposition process on various kinds of group II-VI compound semiconductors by irradiating onto the substrate an ion beam containing nitrogen or phosphorus or arsenic to obtain a p-type thin film crystal.
Inventors
- 👤 Tsuneo Mitsuyu
- 👤 Osamu Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:45
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/22; H10P14/2913; H10P14/2916; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H10P14/3431; H10P14/3432; H10P14/3438; H10P14/3441; H10P14/3444; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
93 words
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of at least one kind of mercury, cadmium, and zinc and an element of at least one kind of sulfur, selenium, and tellurium is being deposited onto a substrate under vacuum, said method comprising the step of: simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen at least a part of which are ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which are ionized.
Claim 2
Independent Claim
93 words
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of at least one kind of mercury, cadmium, and zinc and an element of at least one kind of sulfur, selenium, and tellurium is being deposited onto a substrate under vacuum, said method comprising the step of: simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen at least a part of which are ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which are ionized.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said compound semiconductor consists of zinc selenide, and said substrate consists of a monocrystal of gallium arsenide.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said compound semiconductor consists of zinc selenide, and said substrate consists of a monocrystal of zinc selenide.
Claim 5
Dependent Claim
38 words
A method according to claim 1, wherein said compound semiconductor consists of zinc sulpho-selenide of a composition ratio giving the same lattice constant as that of galium arsenide, and said substrate consists of a monocrystal of gallium arsenide.
Claim 6
Dependent Claim
16 words
A method according to claim 1, wherein an energy of ions is 500 eV or less.
Claim 7
Dependent Claim
35 words
A method according to claim 1, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 8
Dependent Claim
16 words
A method according to claim 2, wherein an energy of ions is 500 eV or less.
Claim 9
Dependent Claim
35 words
A method according to claim 2, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 10
Dependent Claim
16 words
A method according to claim 3, wherein an energy of ions is 500 eV or less.
Claim 11
Dependent Claim
35 words
A method according to claim 3, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 12
Dependent Claim
16 words
A method according to claim 4, wherein an energy of ions is 500 eV or less.
Claim 13
Dependent Claim
35 words
A method according to claim 4, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 14
Dependent Claim
35 words
A method according to claim 5, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 15
Dependent Claim
35 words
A method according to claim 7, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 16
Dependent Claim
35 words
A method according to claim 9, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 17
Dependent Claim
35 words
A method according to claim 11, wherein a concentration of ions which are irradiated onto the substrate is not larger than 1/100 of the concentration of the deposition atoms which are deposited onto the substrate.
Claim 18
Independent Claim
83 words
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of group II and an element of group VI is being deposited onto a substrate under vacuum, said method comprising the step of: simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen or phosphorus or arsenic at least a part of which were ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which were ionized.
Claim 19
Independent Claim
83 words
A method of manufacturing semiconductor materials in the state in which a compound semiconductor consisting of an element of group II and an element of group VI is being deposited onto a substrate under vacuum, said method comprising the step of: simultaneously irradiating onto said substrate a beam of atoms or molecules of nitrogen or phosphorus or arsenic at least a part of which were ionized or of molecules containing nitrogen or phosphorus or arsenic at least a part of which were ionized.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-04-05 | 1991-10-05 | 1992-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-04-05 | 1995-10-05 | 1996-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-04-05 | 1999-10-05 | 2000-04-05 | $7700.00 | Window Closed / Lapsed |