US4589192A
Expired / Lapsed
US
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Hybrid epitaxial growth process
Assignee: United States, AS REPRESENT BY SECRETARY OF ARMY
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Filing: 1984-11-02
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Granted: 1986-05-20
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Expires: 2004-11-02
Abstract
Abstract A method of making infrared detectors on a substrate of mercury cadmium turide (HgCdTe) or mercury zinc telluride (HgZnTe). The steps include those of preparing the substrate, etching and passivating it, and placing it in the ultra-high vaccuum environment of a molecular beam epitaxy apparatus. While in the apparatus, one or more layers of zinc cadmium telluride (ZnCdTe) are deposited. When the ZnCdTe deposition is finished, the substrate is removed from the apparatus and the detectors are delineated lithographically.
Inventors
- 👤 John H. Dinan
- 👤 William A. Gutierrez
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:58
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10F71/00; H10F71/121; H10F71/125; H10F71/1253; H10P; H10P14/00; H10P14/20; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3232; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; H10P14/36; H10P14/3602; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
85 words
A method of making at least one infrared detector from a low band-gap material, including the steps of: (1) preparing a substrate with at least one HgCdTe or HgZnTe layer; (2) etching and passivating said layer; (3) placing said substrate in an ultra-high vacuum environment; (4) removing the passivation from said layer; (5) forming at least one ZnCdTe layer on said substrate by molecular beam epitaxy, (6) removing said substrate from said ultra-high vacuum environment; and (7) delineating at least one detector on said substrate.
Claim 2
Independent Claim
85 words
A method of making at least one infrared detector from a low band-gap material, including the steps of: (1) preparing a substrate with at least one HgCdTe or HgZnTe layer; (2) etching and passivating said layer; (3) placing said substrate in an ultra-high vacuum environment; (4) removing the passivation from said layer; (5) forming at least one ZnCdTe layer on said substrate by molecular beam epitaxy, (6) removing said substrate from said ultra-high vacuum environment; and (7) delineating at least one detector on said substrate.
Claim 3
Dependent Claim
22 words
The method as set forth in claim 1 when step (1) consists of depositing a HgCdTe or HgZnTe layer on a substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-05-19 | 1989-11-18 | 1990-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-05-19 | 1993-11-18 | 1994-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-05-19 | 1997-11-18 | 1998-05-20 | $7700.00 | Window Closed / Lapsed |