US4435224A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing homogeneous layers of composition Hg1-x Cdx
Assignee: Societe Anonyme de Telecommunications SAT
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Filing: 1981-02-17
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Granted: 1984-03-06
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Expires: 2001-02-17
Abstract
Abstract Process for obtaining a homogeneous layer of composition Hg 1-x Cd x Te, comprising the steps of: subjecting a wafer formed by a layer of Hg 1-x .sbsb.o Cd x .sbsb.o Te deposited by epitaxial growth on a CdTe substrate, x o being less than the desired value x, to a melting treatment, then rapidly cooling the wafer.
Inventors
- 👤 Alain Durand
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 17:28
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/125; H10F71/1253; C; C30; C30B; C30B11/00; C30B19/00; C30B23/00; C30B23/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; C30B29/60; H10D; H10D62/00; H10D62/80; H10D62/86; H10D62/862; H10F77/00; H10F77/10; H10F77/12; H10F77/123; H10F77/1237; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2913; H10P14/2917; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3232; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3432; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
97 words
In a process for preparing a wafer comprising an epitaxial layer of Hg 1-x Cd x Te on a substrate of CdTe by isothermal evaporation-diffusion in vacuo characterized by said epitaxial layer having mediocre internal homogeneity and a gradual compositional transition with the CdTe substrate, the improvement comprising: depositing a layer of an intermediate composition Hg 1-x .sbsb.o Cd x .sbsb.o Te, wherein X o <X, by epitaxial growth on the CdTe substrate; melting said layer by subjecting it to heating to a temperature above the liquids point of the layer; and cooling said melted layer rapidly.
Claim 2
Dependent Claim
97 words
In a process for preparing a wafer comprising an epitaxial layer of Hg 1-x Cd x Te on a substrate of CdTe by isothermal evaporation-diffusion in vacuo characterized by said epitaxial layer having mediocre internal homogeneity and a gradual compositional transition with the CdTe substrate, the improvement comprising: depositing a layer of an intermediate composition Hg 1-x .sbsb.o Cd x .sbsb.o Te, wherein X o <X, by epitaxial growth on the CdTe substrate; melting said layer by subjecting it to heating to a temperature above the liquids point of the layer; and cooling said melted layer rapidly.
Claim 3
Dependent Claim
18 words
The improved proces of claim 1 wherein said layer is melted at a temperature of about 800° C.
Claim 4
Dependent Claim
15 words
The improved process of claim 2 wherein the heating is maintained for about 2.5 hours.
Claim 5
Dependent Claim
15 words
The improved process of claim 1 wherein the heating is maintained for about 2.5 hours.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-06 | 1987-09-05 | 1988-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-06 | 1991-09-05 | 1992-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-06 | 1995-09-05 | 1996-03-06 | $7700.00 | Window Closed / Lapsed |