Infrared sensitive semiconductor device and method of manufacture

Abstract

Abstract An infrared sensitive photoconductive material is produced by growing a ternary compound of the formulation Hg(1 ) Cdx Te from a gaseous mixture of mercury, cadmium and tellurium onto a substrate which promotes polycrystalline growth and is chemically inert vis-a-vis the constituent gases. Suitable substrate materials are quartz, sapphire, and certain types of glass which are non-meltable at growth temperatures of the ternary compound. The method preferably grows the polycrystalline material from a gaseous mixture of mercury, cadmium and tellurium heated to a temperature which inhibits binary combinations and then is rapidly cooled to supersaturation very close to the surface of a solid amorphous substrate material although crystalline substrates may be used provided the lattice structure in growth is incompatible with the lattice of the ternary compound.

Inventors

• 👤 R Lee
• 👤 P Mcdermott
• 👤 E Pan

Bibliographic Details