US3884788A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Substrate preparation for liquid phase epitaxy of mercury cadmium telluride
Assignee: Honeywell Inc
•
Filing: 1973-08-30
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Granted: 1975-05-20
•
Expires: 1993-08-30
Abstract
Abstract Substrates suitable for epitaxial growth of mercury cadmium telluride are formed by cleaning a surface of the substrate and then depositing a thin layer of cadmium telluride on the cleaned surface.
Inventors
- 👤 Ralph B Maciolek
- 👤 Richard A Skogman
- 👤 Charles J Speerschneider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 07:36
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/02; C30B19/04; C30B29/00; C30B29/10; C30B29/46; C30B29/48; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/051; Y10S148/064; Y10S148/067; Y10S148/072; Y10S148/15; Y10S148/158; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
73 words
A METHOD OF DEPOSITING A LAYER OF MERCURY CADMIUM FROM A LIQUID SOLUTION ON TO A SUBSTRATE WHICH DOES NOT SUBSTANTIALLY CHEMICALLY REACT WITH THE LIQUID SOLUTION, THE METHOD COMPRISING: SPUTTER ETCHING A SURFACE OF THE SUBSTRATE; SUTTER DEPOSITING A THIN LAYER OF CADMIUM TELLURIDE ON THE SURFACE; AND EPITAXIALLY DEPOSITING A LAYER OF MERCURY CADMIUM TELLURIDE BY CONTACTING THE CADMIUM TELLURIDE COATED SURFACE WITH A LIQUID SOLUTION OF MERCURY, CADMIUM AND TELLURIUM.
Claim 2
Independent Claim
73 words
A METHOD OF DEPOSITING A LAYER OF MERCURY CADMIUM FROM A LIQUID SOLUTION ON TO A SUBSTRATE WHICH DOES NOT SUBSTANTIALLY CHEMICALLY REACT WITH THE LIQUID SOLUTION, THE METHOD COMPRISING: SPUTTER ETCHING A SURFACE OF THE SUBSTRATE; SUTTER DEPOSITING A THIN LAYER OF CADMIUM TELLURIDE ON THE SURFACE; AND EPITAXIALLY DEPOSITING A LAYER OF MERCURY CADMIUM TELLURIDE BY CONTACTING THE CADMIUM TELLURIDE COATED SURFACE WITH A LIQUID SOLUTION OF MERCURY, CADMIUM AND TELLURIUM.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein sputter depositing also results in penetration of a portion of the cadmium telluride into the substrate.
Claim 4
Dependent Claim
22 words
The method of claim 1 wherein the thin layer of cadmium telluride has a thickness of between about 500A and about 1000A.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-05-19 | 1978-11-18 | 1979-05-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-05-19 | 1982-11-18 | 1983-05-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-05-19 | 1986-11-18 | 1987-05-20 | $7700.00 | Window Closed / Lapsed |