US3385731A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating thin film device having close spaced electrodes
Assignee: RCA Corp
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Filing: 1965-11-03
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Granted: 1968-05-28
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Expires: 1985-11-03
Abstract
No abstract record available.
Inventors
- 👤 Welmer Paul Kessler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 16:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6755; H10D30/202; H10D30/6741; H10D30/6743; H10D30/6744; H10D99/00; H10P; H10P10/00; H10P10/12; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/053; Y10S148/15; Y10S438/00; Y10S438/942; Y10S438/944
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
175 words
THE METHOD OF FABRICATING A SOLID STATE DEVICE COMPRISING THE STEPS OF DEPOSITING TWO SPACED METALLIC ELECTRODES UPON ONE MAJOR FACE OF AN INSULATING SUPPORT BY EVAPORATION, UTILIZING A STRETCHED UNTWISTED WIRE MOUNTED ON A FRAME AS AN EVAPORATION MASK TO FORM THE GAP BETWEEN SAID TWO SPACED ELECTRODES; IMPARTING RELATIVE MOTION BETWEEN SAID FRAME AND SAID SUPPORT TRANSVERSELY TO SAID GAP AND PARALLEL TO THE PLANE OF SAID MAJOR FACE FOR A DISTANCE LESS THAN THE DIAMETER OF SAID WIRE; REPEATING THE EVAPORATION OF SAID METALLIC ELECTRODES SO AS TO MAKE SAID GAP BETWEEN SAID ELECTRODES LESS THAN THE DIAMETER OF SAID WIRE AND LESS THAN ONE HUNDRED MICRONS; EVAPORATING A LAYER OF SEMICONDUCTIVE MATERIAL UPON A PORTION OF SAID SPACED ELECTRODES AND SAID ONE MAJOR FACE; EVAPORATING A LAYER OF SEMICONDUCTIVE MATERIAL UPON A PORTION OF ING A FILM OF HIGH-RESISTIVITY MATERIAL HAVING A BANDGAP GREATER THAN SAID SEMICONDUCTIVE MATERIAL UPON SAID LAYER; AND EVAPORATING UPON SAID FILM A THIRD METALLIC ELECTRODE, SAID THIRD ELECTRODE BEING OPPOSITE SAID GAP BETWEEN SAID SPACED ELECTRODES.
Claim 2
Independent Claim
175 words
THE METHOD OF FABRICATING A SOLID STATE DEVICE COMPRISING THE STEPS OF DEPOSITING TWO SPACED METALLIC ELECTRODES UPON ONE MAJOR FACE OF AN INSULATING SUPPORT BY EVAPORATION, UTILIZING A STRETCHED UNTWISTED WIRE MOUNTED ON A FRAME AS AN EVAPORATION MASK TO FORM THE GAP BETWEEN SAID TWO SPACED ELECTRODES; IMPARTING RELATIVE MOTION BETWEEN SAID FRAME AND SAID SUPPORT TRANSVERSELY TO SAID GAP AND PARALLEL TO THE PLANE OF SAID MAJOR FACE FOR A DISTANCE LESS THAN THE DIAMETER OF SAID WIRE; REPEATING THE EVAPORATION OF SAID METALLIC ELECTRODES SO AS TO MAKE SAID GAP BETWEEN SAID ELECTRODES LESS THAN THE DIAMETER OF SAID WIRE AND LESS THAN ONE HUNDRED MICRONS; EVAPORATING A LAYER OF SEMICONDUCTIVE MATERIAL UPON A PORTION OF SAID SPACED ELECTRODES AND SAID ONE MAJOR FACE; EVAPORATING A LAYER OF SEMICONDUCTIVE MATERIAL UPON A PORTION OF ING A FILM OF HIGH-RESISTIVITY MATERIAL HAVING A BANDGAP GREATER THAN SAID SEMICONDUCTIVE MATERIAL UPON SAID LAYER; AND EVAPORATING UPON SAID FILM A THIRD METALLIC ELECTRODE, SAID THIRD ELECTRODE BEING OPPOSITE SAID GAP BETWEEN SAID SPACED ELECTRODES.
References Cited (Backward Citations)
US3138850A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-05-28 | 1971-11-27 | 1972-05-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-05-28 | 1975-11-27 | 1976-05-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-05-28 | 1979-11-27 | 1980-05-28 | $7700.00 | Window Closed / Lapsed |