Dielectric circuit forming process

Abstract

Abstract THERE IS DISCLOSED A PROCESS FOR FORMING INTEGRATED OPTICAL CIRCUIT COMPONENTS ON A SUBSTRATE WAFER IN THE FORM OF DIELECTRIC THIN FILMS IN PATTERNS OF HIGH RESOLUTION AND EDGE SMOOTHNESS. FOR HIGH RESOLUTION, THE USE OF ELECTRON-RESIST AND ELECTRON-BEAM EXPOSURE TECHNIQUES ARE DESCRIBED. PARTICULARLY DISCLOSED IS THE USE OF AN ALUMINUM MASK FORMED OVER THE CIRCUIT LAYER, THE EXPOSED PORTIONS OF WHICH ARE SPUTTER ETCHED AWAY IN AN ATMOSPHERE THAT INCLUDES OXYGEN TO PRESERVE THE ALUMINUM MASK. AFTER THE MASK IS CHEMICALLY ETCHED AWAY, THE RESULTING DAMAGE TO THE QUALITY OF THE SURFACE OF THE UNDERLYING CIRUCIT IS RESTORED BY SPUTTER ETCHING THE DAMAGED SURFACE. THE USE OF FILMS OF SILICA AND BARIUM OXIDE IN SELECTED PROPORTIONS THAT CAN BE VARIED IN DIFFERENT CASES TO ACHIEVE DESIRED INDEX RELATIONSHIPS IS FACILITATED BY THE CATHODE SPUTTERING. CATHODE SPUTTERING, MORE THAN ANY KNOWN ALTERNATIVE, AVOIDS THE FORMATION OF MICROCRYSTALLITES IN THE FILM.

Inventors

• 👤 J Goell

Bibliographic Details