US5513199A — Blue-green laser diode

Claim 1

Independent Claim 84 words

A II-VI compound semiconductor laser diode, including: a plurality of layers of II-VI semiconductor forming a pn junction, including: a first cladding layer of a first conductivity type; a second cladding layer of a second conductivity type; and at least a first guiding layer between the first and second cladding layers; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.

Claim 2

Dependent Claim 84 words

A II-VI compound semiconductor laser diode, including: a plurality of layers of II-VI semiconductor forming a pn junction, including: a first cladding layer of a first conductivity type; a second cladding layer of a second conductivity type; and at least a first guiding layer between the first and second cladding layers; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.

Claim 3

Dependent Claim 63 words

The II-VI laser diode of claim 1 wherein: the first guiding layer includes a first guiding layer of the first conductivity type II-VI semiconductor adjacent the first cladding layer; and the plurality of layers of semiconductor forming the pn junction further include a second guiding layer of the second conductivity type II-VI semiconductor between the second cladding layer and the first guiding layer.

Claim 4

Dependent Claim 18 words

The II-VI laser diode of claim 1 wherein the active layer includes a multiple quantum well active layer.

Claim 5

Dependent Claim 14 words

The laser diode of claim 1 wherein the active layer includes a CdZnSe layer.

Claim 6

Dependent Claim 14 words

The laser diode of claim 1 wherein the active layer includes a ZnSe layer.

Claim 7

Dependent Claim 51 words

The laser diode of claim 1 and further including: a first II-VI semiconductor ohmic contact layer of the first conductivity type between the substrate and the first cladding layer; and a second II-VI semiconductor ohmic contact layer of the second conductivity type between the second cladding layer and the second electrode.

Claim 8

Dependent Claim 29 words

An electronic system including a laser diode of the type characterized by claim 1 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 9

Dependent Claim 58 words

A II-VI compound semiconductor laser diode including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.

Claim 10

Dependent Claim 58 words

A II-VI compound semiconductor laser diode including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer; an active layer of II-VI semiconductor within the pn junction; a semiconductor substrate for supporting the layers of II-VI semiconductor; and first and second electrodes for coupling electrical energy to the laser diode.

Claim 11

Dependent Claim 58 words

The laser diode of claim 8 wherein the plurality of layers of II-VI semiconductor include: a first guiding layer of II-VI semiconductor of a first conductivity type over the substrate; and a second guiding layer of II-VI semiconductor of a second conductivity type over the first guiding layer, the first and second guiding layers forming the pn junction.

Claim 12

Dependent Claim 29 words

An electronic system including a laser diode of the type characterized by claim 9 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 13

Dependent Claim 20 words

The electronic system of claim 10 wherein the active layer of the laser diode includes a quantum well active layer.

Claim 14

Dependent Claim 52 words

The laser diode of claim 9 and further including: a first cladding layer of II-VI semiconductor of the first conductivity type between the substrate and the first guiding layer; and a second cladding layer of II-VI semiconductor of the second conductivity type opposite the second guiding layer from the first guiding layer.

Claim 15

Dependent Claim 29 words

An electronic system including a laser diode of the type characterized by claim 12 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 16

Dependent Claim 20 words

The electronic system of claim 13 wherein the active layer of the laser diode includes a quantum well active layer.

Claim 17

Dependent Claim 16 words

The laser diode of claim 8 wherein the active layer includes a quantum well active layer.

Claim 18

Dependent Claim 19 words

The laser diode of claim 15 wherein the quantum well active layer includes a multiple quantum well active layer.

Claim 19

Dependent Claim 29 words

An electronic system including a laser diode of the type characterized by claim 8 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 20

Dependent Claim 31 words

An electronic communication system including a laser diode of the type characterized by claim 8 for emitting a modulated coherent light beam in the blue and/or green portions of the spectrum.

Claim 21

Dependent Claim 31 words

An optical data recording system including a laser diode of the type characterized by claim 8 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 22

Dependent Claim 30 words

An optical sensing system including a laser diode of the type characterized by claim 8 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 23

Dependent Claim 31 words

An optical imaging system including a laser diode of the type characterized by claim 8 for emitting a modulated coherent light beam in the blue and/or green portions of the spectrum.

Claim 24

Dependent Claim 22 words

The laser diode of claim 8 and further including a waveguide ridge in at least one of the layers of II-VI semiconductor.

Claim 25

Dependent Claim 45 words

The laser diode of claim 8 and further including: a ridge formed in at least one of the layers of II-VI semiconductor; and a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement.

Claim 26

Dependent Claim 170 words

An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including: a semiconductor substrate of a first conductivity type within the housing; a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate and within the housing; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer and within the housing; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying and forming a pn junction with the first guiding layer and within the housing; an active layer of II-VI semiconductor within the pn junction and within the housing; a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer and within the housing; and first and second electrodes within the housing, for coupling electrical energy to the pn junction.

Claim 27

Dependent Claim 170 words

An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including: a semiconductor substrate of a first conductivity type within the housing; a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate and within the housing; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer and within the housing; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying and forming a pn junction with the first guiding layer and within the housing; an active layer of II-VI semiconductor within the pn junction and within the housing; a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer and within the housing; and first and second electrodes within the housing, for coupling electrical energy to the pn junction.

Claim 28

Dependent Claim 25 words

The optical system of claim 24 wherein the laser diode further includes a waveguide ridge in at least one of the layers of II-VI semiconductor.

Claim 29

Dependent Claim 48 words

The optical system of claim 24 wherein the laser diode further includes: a ridge formed in at least one of the layers of II-VI semiconductor; and a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement.

Claim 30

Dependent Claim 20 words

The optical system of claim 26 wherein the active layer of the laser diode includes a quantum well active layer.

Claim 31

Dependent Claim 121 words

An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer; an active layer of II-VI semiconductor within the pn junction and within the housing; a semiconductor substrate for supporting the layers of II-VI semiconductor and within the housing; a ridge formed in at least one of the layers of II-VI semiconductor and within the housing; and first and second electrodes for coupling electrical energy to the laser diode and within the housing.

Claim 32

Dependent Claim 121 words

An optical communication, recording, sensing or imaging system including a housing and a II-VI compound semiconductor laser diode mounted within the housing for emitting a coherent light beam in the blue and/or green portions of the spectrum, the optical system including: a plurality of layers of II-VI semiconductor forming a pn junction, including at least a first guiding layer; an active layer of II-VI semiconductor within the pn junction and within the housing; a semiconductor substrate for supporting the layers of II-VI semiconductor and within the housing; a ridge formed in at least one of the layers of II-VI semiconductor and within the housing; and first and second electrodes for coupling electrical energy to the laser diode and within the housing.

Claim 33

Dependent Claim 53 words

The optical system of claim 28 wherein the plurality of layers of II-VI semiconductor in the laser diode further includes: a first cladding layer of II-VI semiconductor of a first conductivity type over the substrate; and a second cladding layer of II-VI semiconductor of a second conductivity type over the first cladding layer.

Claim 34

Dependent Claim 50 words

The optical system of claim 28 wherein the plurality of layers of II-VI semiconductor in the laser diode further includes: a first guiding layer of II-VI semiconductor of a first conductivity type; and a second guiding layer of II-VI semiconductor of a second conductivity type over the first guiding layer.

Claim 35

Dependent Claim 34 words

The optical system of claim 28 wherein the laser diode further includes a burying layer of II-VI semiconductor on opposite sides of the ridge, forming a buried-ridge waveguide for lateral optical and current confinement.

Claim 36

Dependent Claim 87 words

A II-VI compound semiconductor laser diode comprising a semiconductor substrate, a plurality of layers of II-VI semiconductor forming a pn junction supported by the substrate, including a light-guiding layer and an active layer, and first and second electrodes for coupling electrical energy to the laser diode, for emitting a coherent light beam of at least about 1 mW in green and/or blue portions of the spectrum in response to an applied threshold current corresponding to a threshold current density of less than about 10000 A/cm 2 .

Claim 37

Dependent Claim 87 words

A II-VI compound semiconductor laser diode comprising a semiconductor substrate, a plurality of layers of II-VI semiconductor forming a pn junction supported by the substrate, including a light-guiding layer and an active layer, and first and second electrodes for coupling electrical energy to the laser diode, for emitting a coherent light beam of at least about 1 mW in green and/or blue portions of the spectrum in response to an applied threshold current corresponding to a threshold current density of less than about 10000 A/cm 2 .

Claim 38

Dependent Claim 39 words

The laser diode of claim 32 and further including at least one p-type layer of II-VI semiconductor doped with p-type dopants from a free radical source to a net acceptor concentration of at least 1×10 17 cm -3 .

Claim 39

Dependent Claim 27 words

The laser diode of claim 33 wherein the p-type layer of II-VI semiconductor is doped with p-type dopants from the group consisting of nitrogen, arsenic and phosphorous.

Claim 40

Dependent Claim 39 words

The laser diode of claim 32 and further including at least one p-type layer of II-VI semiconductor doped with p-type dopants from a free radical source to a net acceptor concentration of at least 5×10 17 cm -3 .

Claim 41

Dependent Claim 38 words

The laser diode of claim 32 and further including at least one p-type layer of II-VI semiconductor doped with p-type dopants from a free radical to a net acceptor concentration of at least 1×10 18 cm -3 .

Claim 42

Dependent Claim 16 words

The laser diode of claim 32 wherein the active layer includes a quantum well active layer.

Claim 43

Dependent Claim 19 words

The laser diode of claim 37 wherein the quantum well active layer includes a multiple quantum well active layer.

Claim 44

Dependent Claim 14 words

The laser diode of claim 32 wherein the active layer includes zinc and selenium.

Claim 45

Dependent Claim 13 words

The laser diode of claim 32 wherein the active layer further includes cadmium.

Claim 46

Dependent Claim 30 words

An electronic system including a II-VI laser diode of the type characterized by claim 32 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 47

Dependent Claim 31 words

An electronic communication system including a laser diode of the type characterized by claim 32 for emitting a modulated coherent light beam in the blue and/or green portions of the spectrum.

Claim 48

Dependent Claim 31 words

An optical data recording system including a laser diode of the type characterized by claim 32 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 49

Dependent Claim 30 words

An optical sensing system including a laser diode of the type characterized by claim 32 for emitting a coherent light beam in the blue and/or green portions of the spectrum.

Claim 50

Dependent Claim 31 words

An optical imaging system including a laser diode of the type characterized by claim 32 for emitting a modulated coherent light beam in the blue and/or green portions of the spectrum.

Claim 51

Dependent Claim 19 words

The laser diode of claim 32 wherein the plurality of layers forming the pn junction include zinc and selenium.

Claim 52

Dependent Claim 47 words

The laser diode of claim 32 wherein the plurality of layers forming the pn junction include: a first guiding layer of semiconductor including zinc and selenium of a first conductivity type; and a second guiding layer of semiconductor including zinc and selenium of a second conductivity type.

Claim 53

Dependent Claim 57 words

The laser diode of claim 47 and further including: a first cladding layer of semiconductor including zinc and selenium of a first conductivity type between the substrate and the first guiding layer; and a second cladding layer of semiconductor including zinc and selenium of a second conductivity type opposite the second guiding layer from the active layer.

Claim 54

Dependent Claim 20 words

The laser diode of claim 48 wherein the first and second cladding layers of semiconductor include zinc, selenium and sulfur.

Claim 55

Dependent Claim 15 words

The laser diode of claim 48 wherein the active layer includes cadmium, zinc and selenium.

Claim 56

Dependent Claim 52 words

A laser diode of the type characterized by claim 32 and capable of emitting a coherent light beam of at least about 2mW in green and/or blue portions of the spectrum in response to an applied threshold current corresponding to a threshold current density of less than about 500 A/cm 2 .

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-04-30	1999-10-30	2000-04-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-04-30	2003-10-30	2004-04-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-04-30	2007-10-30	2008-04-30	$7700.00	Window Closed / Lapsed

Blue-green laser diode

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