US5363395A
Expired / Lapsed
US
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Blue-green injection laser structure utilizing II-VI compounds
Assignee: Philips North America LLC
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Filing: 1993-11-30
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Granted: 1994-11-08
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Expires: 2013-11-30
Abstract
Abstract A blue-green II/VI semiconductor injection laser utilizing a Zn 1-u Cd u Se active layer (quantum well) having Zn 1-x Mg x S y Se 1-y cladding layers and ZnS z Se 1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.
Inventors
- 👤 James M. Gaines
- 👤 Ronald R. Drenten
- 👤 Kevin W. Haberern
- 👤 Thomas M. Marshall
- 👤 Piotr M. Mensz
- 👤 John Petruzzello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 04:11
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; B; B82; B82Y; B82Y20/00; H01S5/32; H01S5/327; H01S5/20; H01S5/2054; H01S5/2059; H01S5/2063; H01S5/3403
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
141 words
A laser structure comprising: (a) a substrate of a first conductivity type; (b) a cladding layer of Zn 1-x Mg x S y Se 1-y of said first conductivity type, disposed atop said substrate; (c) a guiding layer of ZnS z Se 1-z of said first conductivity type, disposed atop said first conductivity type cladding layer; (d) an active layer of Zn 1-u Cd u Se, disposed atop said first conductivity type guiding layer; (e) a guiding layer of ZnS z Se 1-z of a second conductivity type opposite said first conductivity type, disposed atop said active layer; (f) a cladding layer of Zn 1-x Mg x S y Se 1-y of said second conductivity type; and (g) wherein 0≦u≦0.4; 0≦z 0.1; 0≦x≦1 and 0.06≦y≦1, x and y being chosen such that the cladding layers are lattice matched with said substrate.
Claim 2
Dependent Claim
141 words
A laser structure comprising: (a) a substrate of a first conductivity type; (b) a cladding layer of Zn 1-x Mg x S y Se 1-y of said first conductivity type, disposed atop said substrate; (c) a guiding layer of ZnS z Se 1-z of said first conductivity type, disposed atop said first conductivity type cladding layer; (d) an active layer of Zn 1-u Cd u Se, disposed atop said first conductivity type guiding layer; (e) a guiding layer of ZnS z Se 1-z of a second conductivity type opposite said first conductivity type, disposed atop said active layer; (f) a cladding layer of Zn 1-x Mg x S y Se 1-y of said second conductivity type; and (g) wherein 0≦u≦0.4; 0≦z 0.1; 0≦x≦1 and 0.06≦y≦1, x and y being chosen such that the cladding layers are lattice matched with said substrate.
Claim 3
Dependent Claim
22 words
The laser structure as claimed in claim 1 wherein said first conductivity type is n and said second conductivity type is p.
Claim 4
Dependent Claim
24 words
The laser structure as claimed in claim 1 further including a second conductivity type contact layer disposed upon said second conductivity type cladding layer.
Claim 5
Dependent Claim
13 words
The laser structure as claimed in claim 1 wherein said substrate comprises GaAs.
Claim 6
Dependent Claim
15 words
The laser structure as claimed in claim 4 wherein said GaAs is doped with silicon.
Claim 7
Dependent Claim
27 words
The laser structure as claimed in claim 1 wherein at least one of said cladding layers and said guiding layers are made n-type by doping with Cl.
Claim 8
Dependent Claim
24 words
The laser structure as claimed in claim 1 wherein at least one of said guiding layers and said cladding layers are doped with nitrogen.
Claim 9
Dependent Claim
14 words
The laser structure as claimed in claim 1 wherein u=0.2; z=0.06 x=0.1 and y=0.1.
Claim 10
Dependent Claim
22 words
The LASER structure as claimed in claim 1 wherein said first conductivity type is p and said second conductivity type is n.
Claim 11
Dependent Claim
132 words
A structure for emitting light comprising: (a) a substrate of a first conductivity type; (b) a cladding layer of Zn 1-x Mg x S y Se 1-y of said first conductivity type, disposed atop said substrate; (c) a guiding layer of said first conductivity type, disposed atop said first conductivity type cladding layer; (d) an active layer of Zn 1-4 Cd u Se, disposed atop said first conductivity type guiding layer; (e) a guiding layer of a second conductivity type opposite said first conductivity type, disposed atop said active layer; (f) a cladding layer of Zn 1-2 x Mg x S y Se 1-y of said second conductivity type; and (g) wherein 0≦u≦0.4; 0≦x≦1 and 0.06≦y≦1, x and y being chosen such that the cladding layers are lattice matched with said substrate.
Claim 12
Dependent Claim
132 words
A structure for emitting light comprising: (a) a substrate of a first conductivity type; (b) a cladding layer of Zn 1-x Mg x S y Se 1-y of said first conductivity type, disposed atop said substrate; (c) a guiding layer of said first conductivity type, disposed atop said first conductivity type cladding layer; (d) an active layer of Zn 1-4 Cd u Se, disposed atop said first conductivity type guiding layer; (e) a guiding layer of a second conductivity type opposite said first conductivity type, disposed atop said active layer; (f) a cladding layer of Zn 1-2 x Mg x S y Se 1-y of said second conductivity type; and (g) wherein 0≦u≦0.4; 0≦x≦1 and 0.06≦y≦1, x and y being chosen such that the cladding layers are lattice matched with said substrate.
Claim 13
Dependent Claim
21 words
The structure as claimed in claim 10 wherein said first conductivity type is n and said second conductivity type is p.
Claim 14
Dependent Claim
23 words
The structure as claimed in claim 10 further including a second conductivity type contact layer disposed upon said second conductivity type cladding layer.
Claim 15
Dependent Claim
12 words
The structure as claimed in claim 10 wherein said substrate comprises GaAs.
Claim 16
Dependent Claim
14 words
The structure as claimed in claim 13 wherein said GaAs is doped with silicon.
Claim 17
Dependent Claim
26 words
The structure as claimed in claim 10 wherein at least one of said cladding layers and said guiding layers are made n-type by doping with cl.
Claim 18
Dependent Claim
23 words
The structure as claimed in claim 10 wherein at least one of said guiding layers and said cladding layers are doped with nitrogen.
Claim 19
Dependent Claim
12 words
The structure as claimed in claim 10 wherein u=0.2; x=0.1 and y=0.1.
Claim 20
Dependent Claim
21 words
The structure as claimed in claim 16 wherein said first conductivity type is p and said second conductivity type is n.
Claim 21
Dependent Claim
18 words
The structure as claimed in claim 10 wherein said guiding layer comprises ZnS z Se 1-z wherein 0≦Z≦0.1.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-11-07 | 1998-05-09 | 1998-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-11-07 | 2002-05-09 | 2002-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-11-07 | 2006-05-09 | 2006-11-08 | $7700.00 | Window Closed / Lapsed |