US5291506A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser made of group II-VI compounds
Assignee: LG Electronics Inc
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Filing: 1992-12-28
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Granted: 1994-03-01
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Expires: 2012-12-28
Abstract
Abstract A semiconductor laser comprising an active layer in which a biaxial compressive strain is generated, to improve an optical gain. The semiconductor laser has a double-heterostructure comprising an active layer of a (Cd,S)Zn(Se,Te) compound, a pair of cladding layers formed beneath and over the active layer and made of a Zn(Se,Te) compound, and a pair of strained layers formed among the active layer and the cladding layers and made of a (Cd,S)Zn(Se,Te) compound. The strained layers is comprised of a Group II-VI compound semiconductor having lattice constants smaller than and band gaps larger than those of the active layer so that a biaxial compressive strain is induced in the active layer, thereby enabling the optical gain to be improved. It is possible to provide semiconductor lasers which can be practically used at a room temperature.
Inventors
- 👤 Do Y. Ahn
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 17:33
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/327; B; B82; B82Y; B82Y20/00; H01S5/3201; H01S5/34; H01S5/3403; H01S5/347
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
153 words
A laser diode of a Group II-VI compound of the Periodic Table of Element semiconductor with a double-heterostructure, comprising: a substrate doped with ions of a predetermined conductivity; at least one lower cladding layer formed over the substrate and doped with ions of the same conductivity as the substrate, the lower cladding layer being comprised of a Group II-VI compound semiconductor; an active region layer formed over the lower cladding layer and having a biaxial compressive strain for improving an optical gain characteristic, the active region layer being comprised of a Group II-VI compound semiconductor; at least one upper cladding layer formed over the active region layer and doped with ions of the opposite conductivity to the lower cladding layer, the upper cladding layer being comprised of a Group II-VI compound semiconductor; and a capping layer formed over the upper cladding layer and doped with ions of the opposite conductivity to the substrate.
Claim 2
Dependent Claim
153 words
A laser diode of a Group II-VI compound of the Periodic Table of Element semiconductor with a double-heterostructure, comprising: a substrate doped with ions of a predetermined conductivity; at least one lower cladding layer formed over the substrate and doped with ions of the same conductivity as the substrate, the lower cladding layer being comprised of a Group II-VI compound semiconductor; an active region layer formed over the lower cladding layer and having a biaxial compressive strain for improving an optical gain characteristic, the active region layer being comprised of a Group II-VI compound semiconductor; at least one upper cladding layer formed over the active region layer and doped with ions of the opposite conductivity to the lower cladding layer, the upper cladding layer being comprised of a Group II-VI compound semiconductor; and a capping layer formed over the upper cladding layer and doped with ions of the opposite conductivity to the substrate.
Claim 3
Dependent Claim
20 words
A laser diode in accordance with claim 1, wherein the substrate and the capping layer are comprised of a GaAs.
Claim 4
Dependent Claim
27 words
A laser diode in accordance with claim 1, wherein the cladding layer is comprised of a Zn(Se,Te) and the active region layer is comprised of a (Cd,S)Zn(Se,Te)
Claim 5
Dependent Claim
101 words
A laser diode in accordance with claim 1, wherein the active region layer comprises: at least one lower barrier layer formed over the lower cladding layer and doped with ions of the same conductivity as the lower cladding layer; an active layer formed over the lower barrier layer and comprised of a undoped compound semiconductor; and at least one upper barrier layer formed over the active layer and doped with ions of the same conductivity as the upper cladding layer, the upper and lower barrier layers having lattice constants smaller than and band gaps larger than those of the active layer.
Claim 6
Dependent Claim
25 words
A laser diode in accordance with claim 4, wherein the active layer has a thickness of 50 Å to 300 Å for exhibiting an elasticity.
Claim 7
Dependent Claim
22 words
A laser diode in accordance with claim 4, wherein the active layer has a band gap of 480 nm to 550 nm.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-28 | 1997-08-30 | 1998-03-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-28 | 2001-08-30 | 2002-03-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-28 | 2005-08-30 | 2006-03-01 | $7700.00 | Window Closed / Lapsed |